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Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.714-722

2012

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Test strategies for industrial testers for converter controls equipment

Journal of instrumentation, 2017-04, Vol.12 (4), p.C04006-C04006

2017

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Development of radiation tolerant components for the Quench Protection System at CERN

Journal of instrumentation, 2016-01, Vol.11 (1), p.C01032-C01032, Article C01032

2016

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Radiation tolerant power converter controls

Journal of instrumentation, 2012-11, Vol.7 (11), p.1-10, Article C11012

2012

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Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1822-1831

2010

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Alpha-Particle Induced Soft-Error Rate in CMOS 130 nm SRAM

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.1086-1092

2011

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A GPU/CUDA implementation of the collection-diffusion model to compute SER of large area and complex circuits

2010 IEEE International Conference on Integrated Circuit Design and Technology, 2010, p.67-70

2010

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Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1876-1883

2010

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Alpha-emitter induced soft-errors in CMOS 130nm SRAM: Real-time underground experiment and Monte-Carlo simulation

2010 IEEE International Conference on Integrated Circuit Design and Technology, 2010, p.220-223

2010

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Energy Dependence of Tungsten-Dominated SEL Cross Sections

IEEE transactions on nuclear science, 2014-10, Vol.61 (5), p.2718-2726

2014

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Combining GEANT4 and TIARA for Neutron Soft Error-Rate Prediction of 65 nm Flip-Flops

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2599-2606

2011

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Monte-Carlo Based Charge Sharing Investigations on a Bulk 65 nm RHBD Flip-Flop

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3267-3272

2010

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Heavy Ion Characterization and Monte Carlo Simulation on 32 nm CMOS Bulk Technology

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2652-2657

2011

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Real-time Soft-Error testing of 40nm SRAMs

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.3C.5.1-3C.5.9

2012

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Experimental characterization of process corners effect on SRAM alpha and neutron Soft Error Rates

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.3C.4.1-3C.4.5

2012

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SEE test and modeling results on 45nm SRAMs with different well strategies

2010 IEEE International Reliability Physics Symposium, 2010, p.407-410

2010

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A commercial 65nm CMOS technology for space applications: Heavy ion, proton and gamma test results and modeling

2009 European Conference on Radiation and Its Effects on Components and Systems, 2009, p.456-464

2009

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Underground characterization and modeling of alpha-particle induced Soft-Error Rate in CMOS 65nm SRAM

2011 12th European Conference on Radiation and Its Effects on Components and Systems, 2011, p.524-527

2011

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GEANT4 analysis of n-Si nuclear reactions from different sources of neutrons and its implication on soft-error rate

2011 12th European Conference on Radiation and Its Effects on Components and Systems, 2011, p.11-14

2011

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Single event upset and multiple cell upset modeling in commercial bulk 65 nm CMOS SRAMs and flip-flops

2009 European Conference on Radiation and Its Effects on Components and Systems, 2009, p.194-200

2009

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Synthesis and characterization of bis(amine)palladium() carboxylate complexes as precursors of palladium nanoparticles

Dalton transactions : an international journal of inorganic chemistry, 2021-05, Vol.5 (2), p.6933-6948

2021

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Synthesis and characterization of silver nanoparticles from (bis)alkylamine silver carboxylate precursors

Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology, 2017, Vol.19 (3), p.121-121, Article 121

2017

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Silicon Carbide, Silicon Carbonitride, and Silicon Oxycarbide Thin Films Formed by Remote Hydrogen Microwave Plasma CVD

Current organic chemistry, 2017-10, Vol.21 (22)

2017

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LHC and HL-LHC: Present and Future Radiation Environment in the High-Luminosity Collision Points and RHA Implications

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.448-456

2018

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Amorphous silicon carbonitride (a‐SiCN) thin film coatings by remote plasma chemical vapor deposition using organosilicon precursor: Effect of substrate temperature

Plasma processes and polymers, 2023-04, Vol.20 (4), p.n/a

2023

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Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate

Test strategies for industrial testers for converter controls equipment

Development of radiation tolerant components for the Quench Protection System at CERN

Radiation tolerant power converter controls

Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level

Alpha-Particle Induced Soft-Error Rate in CMOS 130 nm SRAM

A GPU/CUDA implementation of the collection-diffusion model to compute SER of large area and complex circuits

Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops

Alpha-emitter induced soft-errors in CMOS 130nm SRAM: Real-time underground experiment and Monte-Carlo simulation

Energy Dependence of Tungsten-Dominated SEL Cross Sections

Combining GEANT4 and TIARA for Neutron Soft Error-Rate Prediction of 65 nm Flip-Flops

Monte-Carlo Based Charge Sharing Investigations on a Bulk 65 nm RHBD Flip-Flop

Heavy Ion Characterization and Monte Carlo Simulation on 32 nm CMOS Bulk Technology

Real-time Soft-Error testing of 40nm SRAMs

Experimental characterization of process corners effect on SRAM alpha and neutron Soft Error Rates

SEE test and modeling results on 45nm SRAMs with different well strategies

A commercial 65nm CMOS technology for space applications: Heavy ion, proton and gamma test results and modeling

Underground characterization and modeling of alpha-particle induced Soft-Error Rate in CMOS 65nm SRAM

GEANT4 analysis of n-Si nuclear reactions from different sources of neutrons and its implication on soft-error rate

Single event upset and multiple cell upset modeling in commercial bulk 65 nm CMOS SRAMs and flip-flops

Synthesis and characterization of bis(amine)palladium() carboxylate complexes as precursors of palladium nanoparticles

Synthesis and characterization of silver nanoparticles from (bis)alkylamine silver carboxylate precursors

Silicon Carbide, Silicon Carbonitride, and Silicon Oxycarbide Thin Films Formed by Remote Hydrogen Microwave Plasma CVD

LHC and HL-LHC: Present and Future Radiation Environment in the High-Luminosity Collision Points and RHA Implications

Amorphous silicon carbonitride (a‐SiCN) thin film coatings by remote plasma chemical vapor deposition using organosilicon precursor: Effect of substrate temperature

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