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Properties of carbon-doped GaN

Applied physics letters, 2001-02, Vol.78 (6), p.757-759

2001

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Growth and characterization of phosphorus doped n-type diamond thin films

Diamond and related materials, 1998-02, Vol.7 (2), p.540-544

1998

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Is sulfur a donor in diamond?

Applied physics letters, 2000-02, Vol.76 (6), p.757-759

2000

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Electrical isolation of GaN by ion implantation damage: Experiment and model

Applied physics letters, 1999-04, Vol.74 (17), p.2441-2443

1999

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Damage threshold for ion-beam induced graphitization of diamond

Applied physics letters, 1995-08, Vol.67 (9), p.1194-1196

1995

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Optical Conductivity Studies in Heavily Boron-Doped Diamond

Physica status solidi. A, Applied research, 2001-08, Vol.186 (2), p.303-307

2001

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Formation of delta-doped, buried conducting layers in diamond, by high-energy, B-ion implantation

Diamond and related materials, 1998-10, Vol.7 (10), p.1429-1432

1998

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Electrically active sulfur-defect complexes in sulfur implanted diamond

Journal of applied physics, 2003-09, Vol.94 (6), p.3923-3930

2003

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Inhibition of Light Element Diffusion in Diamond Due to Ion Implantation Related Defects

Physica status solidi. A, Applied research, 2001-08, Vol.186 (2), p.281-289

2001

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Diffusion of Lithium in Diamond

Physica status solidi. A, Applied research, 2002-10, Vol.193 (3), p.508-516

2002

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Structural, optical and electrical properties of nanodiamond films deposited by HFCVD on borosilicate glass, fused silica and silicon at low temperature

Physica status solidi. A, Applied research, 2004-09, Vol.201 (11), p.2499-2502

2004

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Instantaneous annealing of CVD diamond during high dose-rate ion implantation

Diamond and related materials, 1999-03, Vol.8 (2), p.877-881

1999

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Boron implantation/ in situ annealing procedure for optimal p -type properties of diamond

Applied physics letters, 1996-04, Vol.68 (16), p.2264-2266

1996

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Growth mechanisms of DLC films from C + ions: experimental studies

Diamond and related materials, 1995-04, Vol.4 (4), p.318-323

1995

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Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures

Physica status solidi. A, Applied research, 2003-09, Vol.199 (1), p.82-86

2003

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Excitonic recombinations and energy levels of highly boron doped homoepitaxial diamond films before and after hydrogenation

Diamond and related materials, 2005-03, Vol.14 (3-7), p.350-354

2005

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Effects of point defects on the electrical properties of doped diamond

Diamond and related materials, 2000-04, Vol.9 (3-6), p.1051-1056

2000

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Photo-Hall effect measurements in P, N and B-doped diamond at low temperatures

Diamond and related materials, 2004-04, Vol.13 (4), p.713-717

2004

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Can n-type doping of diamond be achieved by Li or Na ion implantation ?

Applied physics letters, 1993-11, Vol.63 (18), p.2502-2504

1993

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ESR Study of Phosphorus Implanted Type IIa Diamond

Physica status solidi. A, Applied research, 2000-09, Vol.181 (1), p.5-10

2000

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Thermally activated electrical conductivity in thin GaN epitaxial films

Applied physics letters, 2000-03, Vol.76 (11), p.1431-1433

2000

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Hydrogen diffusion in B-ion-implanted and B-doped homo-epitaxial diamond: passivation of defects vs. passivation of B acceptors

Diamond and related materials, 2001-03, Vol.10 (3), p.453-458

2001

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Nature of damage in diamond implanted at low temperatures

Diamond and related materials, 1995-05, Vol.4 (5), p.569-574

1995

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The Effect of Grain Boundaries on Electrical Conductivity in Thin GaN Layers

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.683-687

1999

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Phosphorus site after CIRA implantation of type IIa diamond

Diamond and related materials, 2001-03, Vol.10 (3), p.580-584

2001

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Properties of carbon-doped GaN

Growth and characterization of phosphorus doped n-type diamond thin films

Is sulfur a donor in diamond?

Electrical isolation of GaN by ion implantation damage: Experiment and model

Damage threshold for ion-beam induced graphitization of diamond

Optical Conductivity Studies in Heavily Boron-Doped Diamond

Formation of delta-doped, buried conducting layers in diamond, by high-energy, B-ion implantation

Electrically active sulfur-defect complexes in sulfur implanted diamond

Inhibition of Light Element Diffusion in Diamond Due to Ion Implantation Related Defects

Diffusion of Lithium in Diamond

Structural, optical and electrical properties of nanodiamond films deposited by HFCVD on borosilicate glass, fused silica and silicon at low temperature

Instantaneous annealing of CVD diamond during high dose-rate ion implantation

Boron implantation/ in situ annealing procedure for optimal p -type properties of diamond

Growth mechanisms of DLC films from C + ions: experimental studies

Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures

Excitonic recombinations and energy levels of highly boron doped homoepitaxial diamond films before and after hydrogenation

Effects of point defects on the electrical properties of doped diamond

Photo-Hall effect measurements in P, N and B-doped diamond at low temperatures

Can n-type doping of diamond be achieved by Li or Na ion implantation ?

ESR Study of Phosphorus Implanted Type IIa Diamond

Thermally activated electrical conductivity in thin GaN epitaxial films

Hydrogen diffusion in B-ion-implanted and B-doped homo-epitaxial diamond: passivation of defects vs. passivation of B acceptors

Nature of damage in diamond implanted at low temperatures

The Effect of Grain Boundaries on Electrical Conductivity in Thin GaN Layers

Phosphorus site after CIRA implantation of type IIa diamond

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