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GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography

Physics of the solid state, 2019-12, Vol.61 (12), p.2335-2337

2019

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Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (16), p.2121-2124

2019

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Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (14), p.1843-1845

2018

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Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency

Physica status solidi. A, Applications and materials science, 2016-01, Vol.213 (1), p.19-29

2016

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Emission spectrum control in monolithic blue-cyan dichromatic light-emitting diodes

Semiconductor science and technology, 2020-04, Vol.35 (4), p.45017

2020

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Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

Technical physics letters, 2021-10, Vol.47 (10), p.753-756

2021

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Investigation of Statistical Broadening in InGaN Alloys

Journal of physics. Conference series, 2018-12, Vol.1135 (1), p.12050

2018

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The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE

Technical physics letters, 2020-12, Vol.46 (12), p.1211-1214

2020

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Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography

Semiconductors (Woodbury, N.Y.), 2018-10, Vol.52 (10), p.1357-1362

2018

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Luminescence peculiarities of InGaN/GaN dichromatic LEDs

Journal of physics. Conference series, 2017-03, Vol.816 (1), p.12038

2017

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Resonant Bragg structures with GaN/AlGaN Quantum Wells

Journal of physics. Conference series, 2018-06, Vol.1038 (1), p.12119

2018

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InGaN/GaN light-emitting diode microwires of submillimeter length

Semiconductors (Woodbury, N.Y.), 2017-01, Vol.51 (1), p.100-103

2017

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InAlN AlN GaN heterostructures for high electron mobility transistors

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12164

2016

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effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

Semiconductors (Woodbury, N.Y.), 2016-10, Vol.50 (10), p.1383-1389

2016

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Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1241-1247

2016

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Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Journal of crystal growth, 2011-01, Vol.315 (1), p.267-271

2011

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Self-sustained oscillations in weakly coupled GaAs/AlGaAs superlattices

Semiconductor science and technology, 2004-04, Vol.19 (4), p.S77-S79

2004

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Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.774-777

2012

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InGaN/GaN short-period superlattices: synthesis, properties, applications

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2308-2310

2011

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Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

Semiconductors (Woodbury, N.Y.), 2009-06, Vol.43 (6), p.812-817

2009

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Analysis of the local indium composition in ultrathin InGaN layers

Semiconductor science and technology, 2007-05, Vol.22 (5), p.528-532

2007

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Formation of Three-Dimensional Islands in the Active Region of InGaN Based Light Emitting Diodes Using a Growth Interruption Approach

Science of advanced materials, 2015-08, Vol.7 (8), p.1629-1635

2015

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Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1516-1521

2015

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Domain boundary instability in weakly coupled GaAs/AlGaAs superlattices

Superlattices and microstructures, 2005-02, Vol.37 (2), p.139-150

2005

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Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

Semiconductors (Woodbury, N.Y.), 2014, Vol.48 (1), p.53-57

2014

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GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography

Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam

Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs

Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency

Emission spectrum control in monolithic blue-cyan dichromatic light-emitting diodes

Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

Investigation of Statistical Broadening in InGaN Alloys

The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE

Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography

Luminescence peculiarities of InGaN/GaN dichromatic LEDs

Resonant Bragg structures with GaN/AlGaN Quantum Wells

InGaN/GaN light-emitting diode microwires of submillimeter length

InAlN AlN GaN heterostructures for high electron mobility transistors

effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Self-sustained oscillations in weakly coupled GaAs/AlGaAs superlattices

Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs

InGaN/GaN short-period superlattices: synthesis, properties, applications

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

Analysis of the local indium composition in ultrathin InGaN layers

Formation of Three-Dimensional Islands in the Active Region of InGaN Based Light Emitting Diodes Using a Growth Interruption Approach

Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

Domain boundary instability in weakly coupled GaAs/AlGaAs superlattices

Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

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