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Electrical spin-injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes

Physica Status Solidi (b), 2009-05, Vol.246 (5), p.1132-1137

2009

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Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure

Semiconductor science and technology, 2000-11, Vol.15 (11), p.1049-1053

2000

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Terahertz gain on intersubband transitions in multilayer delta-doped p - Ge structures

Journal of applied physics, 2005-07, Vol.98 (2), p.023107-023107-7

2005

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Suppression of the photoluminescence quenching effect in self-assembled InAs∕GaAs quantum dots

Applied physics letters, 2005-08, Vol.87 (5)

2005

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Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate

Quantum electronics (Woodbury, N.Y.), 1998-07, Vol.28 (7), p.605-607, Article 605

1998

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Transport Properties of 2D-Electron Gas in a InGaAs/GaAs DQW in a Vicinity of Low Magnetic-Field-Induced Insulator-Quantum Hall Liquid Transition

Physics of Semiconductors; Part A, 2007, Vol.893, p.647-648

2007

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Spin Effects in the n-InxGa1-xAs/GaAs Double Quantum Well Magnetoresistance Under Tilted Magnetic Fields

Physics of Semiconductors; Part A, 2007, Vol.893, p.631-632

2007

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Electrical spin injection in light emitting Schottky diodes based on InGaAs /GaAs QW heterostructures

Physics of Semiconductors; Part B, 2007, Vol.893, p.1257-1258

2007

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Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm

Quantum electronics (Woodbury, N.Y.), 1999-03, Vol.29 (3), p.217-218

1999

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Investigation of the effects of spin injection of charge carriers from a ferromagnetic Ni(Co)/GaAs Schottky contact in quantum well heterostructures

Bulletin of the Russian Academy of Sciences. Physics, 2008-02, Vol.72 (2), p.163-166

2008

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Silicon epilayers grown by chemical vapor deposition from high-purity silane

Inorganic materials, 2006-08, Vol.42 (8), p.815-818

2006

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Quantum corrections to conductivity: From weak to strong localization

Physical review. B, Condensed matter, 2002-06, Vol.65 (23), Article 235322

2002

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Optical Er-doping of Si during sublimational molecular beam epitaxy

Journal of crystal growth, 1999-05, Vol.201, p.534-537

1999

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Semiconductor lasers with tunnel-coupled waveguides emitting at the wavelength of 980 nm

Quantum electronics (Woodbury, N.Y.), 1997-02, Vol.27 (2), p.118-121

1997

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Current Oscillations under Lateral Transport in GaAs∕InGaAs Quantum Well Heterostructures

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (1), p.44

Antonov, A. V.

2005

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Effect of an Interfacial Oxide Layer on the Electroluminescence Efficiency of Metal–Quantum-Confined Semiconductor Heterostructures

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (1), p.17

Baı̆dus’, N. V.

2005

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Parallel magnetic field-induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes

Physica. E, Low-dimensional systems & nanostructures, 2004-04, Vol.22 (1), p.68-71

2004

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Properties of Structures Based on Laser-Plasma Mn-Doped GaAs and Grown by MOC-Hydride Epitaxy

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (1), p.77

Vasil’eva, Yu. V.

2005

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Spin Effects in Magnetotransport of an n-InxGa1-xAs/GaAs Double Quantum Well Under Parallel Magnetic Fields

Physics of Semiconductors; Part B, 2005, Vol.772, p.1003-1004

2005

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Terahertz Luminescence of GaAs-Based Heterostructures with Quantum Wells under the Optical Excitation of Donors

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (1), p.67

Bekin, N. A.

2005

Volltextzugriff (PDF)

Negative Photoconductivity of Selectively Doped SiGe∕Si : B Heterostructures with a Two-Dimensional Hole Gas in the Middle-Infrared Range

Physics of the solid state, 2005-01, Vol.47 (1), p.46

Antonov, A. V.

2005

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Electrically active centers in light emitting Si : Er/Si structures grown by the sublimation MBE method

Physica. B, Condensed matter, 2001-12, Vol.308, p.361-364

2001

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Electrical spin injection in forward biased Schottky diodes based on InGaAs-GaAs quantum well heterostructures

Applied physics letters, 2006-10, Vol.89 (18), p.181118-181118-3

2006

Volltextzugriff (PDF)

Nonohmic conductivity under transition from weak to strong localization in GaAs/InGaAs structures with a two-dimensional electron gas

Semiconductors (Woodbury, N.Y.), 2003-06, Vol.37 (6), p.705-709

2003

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Electrical spin-injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes

Physica status solidi. B. Basic research, 2009, Vol.246 (5), p.1132-1137

2009

Volltextzugriff (PDF)

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Electrical spin-injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes

Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure

Terahertz gain on intersubband transitions in multilayer delta-doped p - Ge structures

Suppression of the photoluminescence quenching effect in self-assembled InAs∕GaAs quantum dots

Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate

Transport Properties of 2D-Electron Gas in a InGaAs/GaAs DQW in a Vicinity of Low Magnetic-Field-Induced Insulator-Quantum Hall Liquid Transition

Spin Effects in the n-InxGa1-xAs/GaAs Double Quantum Well Magnetoresistance Under Tilted Magnetic Fields

Electrical spin injection in light emitting Schottky diodes based on InGaAs /GaAs QW heterostructures

Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm

Investigation of the effects of spin injection of charge carriers from a ferromagnetic Ni(Co)/GaAs Schottky contact in quantum well heterostructures

Silicon epilayers grown by chemical vapor deposition from high-purity silane

Quantum corrections to conductivity: From weak to strong localization

Optical Er-doping of Si during sublimational molecular beam epitaxy

Semiconductor lasers with tunnel-coupled waveguides emitting at the wavelength of 980 nm

Current Oscillations under Lateral Transport in GaAs∕InGaAs Quantum Well Heterostructures

Effect of an Interfacial Oxide Layer on the Electroluminescence Efficiency of Metal–Quantum-Confined Semiconductor Heterostructures

Parallel magnetic field-induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes

Properties of Structures Based on Laser-Plasma Mn-Doped GaAs and Grown by MOC-Hydride Epitaxy

Spin Effects in Magnetotransport of an n-InxGa1-xAs/GaAs Double Quantum Well Under Parallel Magnetic Fields

Terahertz Luminescence of GaAs-Based Heterostructures with Quantum Wells under the Optical Excitation of Donors

Negative Photoconductivity of Selectively Doped SiGe∕Si : B Heterostructures with a Two-Dimensional Hole Gas in the Middle-Infrared Range

Electrically active centers in light emitting Si : Er/Si structures grown by the sublimation MBE method

Electrical spin injection in forward biased Schottky diodes based on InGaAs-GaAs quantum well heterostructures

Nonohmic conductivity under transition from weak to strong localization in GaAs/InGaAs structures with a two-dimensional electron gas

Electrical spin-injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes

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