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A 110 GHz Comb Generator in a 250 nm InP HBT Technology

IEEE microwave and wireless components letters, 2022-06, Vol.32 (6), p.736-739

2022

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A Fully-Integrated 40-222 GHz InP HBT Distributed Amplifier

IEEE microwave and wireless components letters, 2014-07, Vol.24 (7), p.460-462

2014

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A Prescription for Sub-Millimeter-Wave Transistor Characterization

IEEE transactions on terahertz science and technology, 2013-07, Vol.3 (4), p.433-439

2013

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H-Band Power Amplifier Integrated Circuits Using 250-nm InP HBT Technology

IEEE transactions on terahertz science and technology, 2015-03, Vol.5 (2), p.215-222

2015

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N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz

IEEE microwave and wireless technology letters (Print), 2023-07, Vol.33 (7), p.1-0

2023

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Transistor Model Verification Including Measurement Uncertainty

IEEE transactions on microwave theory and techniques, 2016-11, Vol.64 (11), p.3927-3933

2016

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Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth

IEEE transactions on electron devices, 2015-09, Vol.62 (9), p.2779-2785

2015

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180-265 GHz, 17-24 dBm output power broadband, high-gain power amplifiers in InP HBT

2017 IEEE MTT-S International Microwave Symposium (IMS), 2017, p.973-976

2017

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InP HBT amplifier MMICs operating to 0.67 THz

2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013, p.1-3

2013

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A Compact 140-GHz, 150-mW High-Gain Power Amplifier MMIC in 250-nm InP HBT

IEEE microwave and wireless components letters, 2019-04, Vol.29 (4), p.282-284

2019

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InP HBT Technologies for THz Integrated Circuits

Proceedings of the IEEE, 2017-06, Vol.105 (6), p.1051-1067

2017

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Design of InP Segmented-collector DHBTs with Reduced Collector Transit Time τc for Large Power Bandwidth Power Amplifiers

2018 76th Device Research Conference (DRC), 2018, p.1-2

2018

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First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors

2019 Device Research Conference (DRC), 2019, p.105-106

2019

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A 150–175-GHz 30-dB S 21 Power Amplifier With 125-mW P out and 16.2% PAE Using InP HBT

IEEE microwave and wireless components letters, 2022-06, Vol.32 (6), p.559-562

2022

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A 140-GHz 0.25-W PA and a 55-135 GHz 115-135 mW PA, High-Gain, Broadband Power Amplifier MMICs in 250-nm InP HBT

2019 IEEE MTT-S International Microwave Symposium (IMS), 2019, p.1245-1248

2019

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220-GHz High-Efficiency Power Amplifiers in 250-nm and 130-nm InP HBT Technologies Having 14.4-25.0% PAE and 40-60 mW \mathrm

2024 IEEE/MTT-S International Microwave Symposium - IMS 2024, 2024, p.966-969

2024

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A 220-GHz Power Amplifier With 60-mW P out and 23.5% PAE in 130-nm InP HBT

IEEE microwave and wireless technology letters (Print), 2024-04, Vol.34 (4), p.431-434

2024

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A 220-GHz Power Amplifier With 60-mW TEXPRESERVE0 and 23.5% PAE in 130-nm InP HBT

IEEE microwave and wireless technology letters (Print), 2024-04, p.1-4

2024

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Artificial Neural Networks for Power Match Modeling and Verification With a Novel D-Band Vector Load-Pull Bench

IEEE transactions on microwave theory and techniques, 2024-06, Vol.72 (6), p.3300-3310

2024

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A 78-mW 220-GHz Power Amplifier With Peak 18.4% PAE in 250-nm InP HBT Technology

IEEE transactions on microwave theory and techniques, 2024, p.1-10

2024

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71–95 GHz (23–40% PAE) and 96–120 GHz (19–22% PAE) high efficiency 100–130 mW power amplifiers in InP HBT

2016 IEEE MTT-S International Microwave Symposium (IMS), 2016, p.1-4

2016

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GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas

IEEE electron device letters, 2018-03, Vol.39 (3), p.417-420

2018

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InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz

IEEE journal of solid-state circuits, 2011-10, Vol.46 (10), p.2203-2214

2011

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An InGaAs/InP DHBT With Simultaneous \text/\text}~404/901 GHz and 4.3 V Breakdown Voltage

IEEE journal of the Electron Devices Society, 2015-01, Vol.3 (1), p.54-57

2015

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A 150-175 GHz 30-dB S21 G-band Power Amplifier with 0.25-W Pout and 15.7% PAE in a 250-nm InP HBT Technology

2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, 2022, p.444-447

2022

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A 110 GHz Comb Generator in a 250 nm InP HBT Technology

A Fully-Integrated 40-222 GHz InP HBT Distributed Amplifier

A Prescription for Sub-Millimeter-Wave Transistor Characterization

H-Band Power Amplifier Integrated Circuits Using 250-nm InP HBT Technology

N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz

Transistor Model Verification Including Measurement Uncertainty

Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth

180-265 GHz, 17-24 dBm output power broadband, high-gain power amplifiers in InP HBT

InP HBT amplifier MMICs operating to 0.67 THz

A Compact 140-GHz, 150-mW High-Gain Power Amplifier MMIC in 250-nm InP HBT

InP HBT Technologies for THz Integrated Circuits

Design of InP Segmented-collector DHBTs with Reduced Collector Transit Time τc for Large Power Bandwidth Power Amplifiers

First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors

A 150–175-GHz 30-dB S 21 Power Amplifier With 125-mW P out and 16.2% PAE Using InP HBT

A 140-GHz 0.25-W PA and a 55-135 GHz 115-135 mW PA, High-Gain, Broadband Power Amplifier MMICs in 250-nm InP HBT

220-GHz High-Efficiency Power Amplifiers in 250-nm and 130-nm InP HBT Technologies Having 14.4-25.0% PAE and 40-60 mW \mathrm

A 220-GHz Power Amplifier With 60-mW P out and 23.5% PAE in 130-nm InP HBT

A 220-GHz Power Amplifier With 60-mW TEXPRESERVE0 and 23.5% PAE in 130-nm InP HBT

Artificial Neural Networks for Power Match Modeling and Verification With a Novel D-Band Vector Load-Pull Bench

A 78-mW 220-GHz Power Amplifier With Peak 18.4% PAE in 250-nm InP HBT Technology

71–95 GHz (23–40% PAE) and 96–120 GHz (19–22% PAE) high efficiency 100–130 mW power amplifiers in InP HBT

GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas

InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz

An InGaAs/InP DHBT With Simultaneous \text/\text}~404/901 GHz and 4.3 V Breakdown Voltage

A 150-175 GHz 30-dB S21 G-band Power Amplifier with 0.25-W Pout and 15.7% PAE in a 250-nm InP HBT Technology

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