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“Leaky Dielectric” Model for the Suppression of Dynamic R} in Carbon-Doped AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2826-2834

2017

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Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

Applied physics letters, 2013-02, Vol.102 (7)

2013

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Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

Applied physics letters, 2014-06, Vol.104 (26)

2014

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Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3152-3158

2007

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IEEE_Xplore

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

IEEE electron device letters, 2014-03, Vol.35 (3), p.327-329

2014

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IEEE_Xplore

Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.977-983

2017

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IEEE_Xplore

Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.478-482

2008

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IEEE_Xplore

Mechanism of hot electron electroluminescence in GaN-based transistors

Journal of physics. D, Applied physics, 2016-11, Vol.49 (43), p.435101

2016

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Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SB0802

2021

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Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3327-3333

2012

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IEEE_Xplore

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Applied physics letters, 2015-05, Vol.106 (21)

2015

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"Kink" in AlGaN/GaN-HEMTs: Floating Buffer Model

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3746-3753

2018

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GaN-on-diamond technology platform: Bonding-free membrane manufacturing process

AIP advances, 2020-03, Vol.10 (3), p.035306-035306-5

2020

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Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.13-19

2009

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IEEE_Xplore

Transport behavior of holes in boron delta-doped diamond structures

Journal of applied physics, 2013-01, Vol.113 (3), p.033702

2013

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Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors

IEEE electron device letters, 2020-12, Vol.41 (12), p.1754-1757

2020

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IEEE_Xplore

Insight into Buffer Trap-Induced Current Saturation and Current Collapse in GaN RF Heterojunction Field-Effect Transistors

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5460-5465

2020

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IEEE_Xplore

Electrical and Thermal Performance of Ga₂O₃-Al₂O₃-Diamond Super-Junction Schottky Barrier Diodes

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5055-5061

2021

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IEEE_Xplore

Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks

Applied physics letters, 2021-12, Vol.119 (24)

2021

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Investigation of the GaN-on-GaAs interface for vertical power device applications

Journal of applied physics, 2014-07, Vol.116 (1)

2014

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Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation

Applied physics letters, 2022-06, Vol.120 (24)

2022

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Extraction of Sub-Threshold Mobility in Ga2O3 Lateral Transistors From AC Conductance

IEEE electron device letters, 2023-12, Vol.44 (12), p.1943-1946

2023

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IEEE_Xplore

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

IEEE transactions on nuclear science, 2018-12, Vol.65 (12), p.2862-2869

2018

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IEEE_Xplore

Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.525-530

2022

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IEEE_Xplore

Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements

Journal of applied physics, 2024-05, Vol.135 (19)

2024

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“Leaky Dielectric” Model for the Suppression of Dynamic R} in Carbon-Doped AlGaN/GaN HEMTs

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs

Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

Mechanism of hot electron electroluminescence in GaN-based transistors

Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

"Kink" in AlGaN/GaN-HEMTs: Floating Buffer Model

GaN-on-diamond technology platform: Bonding-free membrane manufacturing process

Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Transport behavior of holes in boron delta-doped diamond structures

Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors

Insight into Buffer Trap-Induced Current Saturation and Current Collapse in GaN RF Heterojunction Field-Effect Transistors

Electrical and Thermal Performance of Ga₂O₃-Al₂O₃-Diamond Super-Junction Schottky Barrier Diodes

Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks

Investigation of the GaN-on-GaAs interface for vertical power device applications

Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation

Extraction of Sub-Threshold Mobility in Ga2O3 Lateral Transistors From AC Conductance

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs

Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements

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