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GaInNAs: a novel material for long-wavelength semiconductor lasers

IEEE journal of selected topics in quantum electronics, 1997-06, Vol.3 (3), p.719-730

1997

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1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers

IEEE photonics technology letters, 1998-04, Vol.10 (4), p.487-488

1998

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Mechanism analysis of improved GaInNAs optical properties through thermal annealing

Journal of crystal growth, 2000-02, Vol.209 (2), p.345-349

2000

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GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes

IEEE photonics technology letters, 1998-02, Vol.10 (2), p.188-190

1998

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Gas-source MBE of GaInNAs for long-wavelength laser diodes

Journal of crystal growth, 1998-06, Vol.188 (1), p.255-259

1998

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Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

Journal of crystal growth, 1996-07, Vol.164 (1), p.175-179

1996

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Direct wafer bonding of III-V compound semiconductors for free-material and free-orientation integration

IEEE journal of quantum electronics, 1997-06, Vol.33 (6), p.959-969

1997

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InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD

IEEE journal of quantum electronics, 1993-06, Vol.29 (6), p.2088-2096

1993

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Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth

Electronics letters, 1991-11, Vol.27 (23), p.2138-2140

1991

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InP-based reversed-mesa ridge-waveguide structure for high-performance long-wavelength laser diodes

IEEE journal of selected topics in quantum electronics, 1997-04, Vol.3 (2), p.672-683

1997

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Nitrogen incorporation rate, optimal growth temperature, and AsH3-flow rate in GaInNAs growth by gas-source MBE using N-radicals as an N-source

Journal of crystal growth, 1999-05, Vol.201-202, p.351-354

1999

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Continuous-wave operation of long-wavelength GaInNAs/GaAs quantum well laser

Electronics letters, 1996, Vol.32 (17), p.1585-1586

1996

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GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance

Japanese Journal of Applied Physics, 1996-02, Vol.35 (2B), p.1273-1275

1996

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A Tutorial at OFC 2019: Ultra High-Speed Quantum-Well Semiconductor Lasers

2019 Optical Fiber Communications Conference and Exhibition (OFC), 2019, p.1-61

Uomi, K.

2019

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High-power highly-reliable operation of 0.98-μm InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriers

IEEE journal of selected topics in quantum electronics, 1995-06, Vol.1 (2), p.189-194

1995

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Wide Temperature Range Operation (20-80°C) of 53.2 Gbit/s NRZ Directly Modulated 1.3-μm DFB Lasers Transmitted Over 2 km

2018 IEEE International Semiconductor Laser Conference (ISLC), 2018, p.1-2

2018

Volltextzugriff (PDF)

Multistep formation and lateral variation in the In composition in InGaAs layers grown by metalorganic vapor phase epitaxy on (001) vicinal GaAs substrates

Journal of crystal growth, 1994-12, Vol.145 (1), p.133-139

1994

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Oscillation wavelength and laser structure dependence of nonlinear damping effect in semiconductor lasers

Applied physics letters, 1991-02, Vol.58 (7), p.675-677

1991

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Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)

Applied physics letters, 1995-08, Vol.67 (6), p.810-812

1995

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GaNAs grown by gas source molecular beam epitaxy

Solid-state electronics, 1997-02, Vol.41 (2), p.209-212

1997

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Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/GaAlAs multiple quantum well lasers

Applied physics letters, 1987-07, Vol.51 (2), p.78-80

1987

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1.3-μm InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers

IEEE journal of selected topics in quantum electronics, 1997-04, Vol.3 (2), p.166-172

1997

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120°C, 25.8-Gbps operation of 1.3-µm directly modulated InGaAlAs-MQW DFB lasers

2016 International Semiconductor Laser Conference (ISLC), 2016, p.1-2

2016

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Doping-type dependence of turn-on delay time in 1.3-μm InGaAsP-InP modulation-doped strained quantum-well lasers

IEEE photonics technology letters, 1996-03, Vol.8 (3), p.328-330, Article 328

1996

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High power COD-free operation of 0.98μm InGaAs/GaAs/InGaP lasers with non-injection regions near the facets

Electronics letters, 1994-08, Vol.30 (17), p.1410-1411

1994

Volltextzugriff (PDF)

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GaInNAs: a novel material for long-wavelength semiconductor lasers

1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers

Mechanism analysis of improved GaInNAs optical properties through thermal annealing

GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes

Gas-source MBE of GaInNAs for long-wavelength laser diodes

Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

Direct wafer bonding of III-V compound semiconductors for free-material and free-orientation integration

InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD

Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth

InP-based reversed-mesa ridge-waveguide structure for high-performance long-wavelength laser diodes

Nitrogen incorporation rate, optimal growth temperature, and AsH3-flow rate in GaInNAs growth by gas-source MBE using N-radicals as an N-source

Continuous-wave operation of long-wavelength GaInNAs/GaAs quantum well laser

GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance

A Tutorial at OFC 2019: Ultra High-Speed Quantum-Well Semiconductor Lasers

High-power highly-reliable operation of 0.98-μm InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriers

Wide Temperature Range Operation (20-80°C) of 53.2 Gbit/s NRZ Directly Modulated 1.3-μm DFB Lasers Transmitted Over 2 km

Multistep formation and lateral variation in the In composition in InGaAs layers grown by metalorganic vapor phase epitaxy on (001) vicinal GaAs substrates

Oscillation wavelength and laser structure dependence of nonlinear damping effect in semiconductor lasers

Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)

GaNAs grown by gas source molecular beam epitaxy

Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/GaAlAs multiple quantum well lasers

1.3-μm InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers

120°C, 25.8-Gbps operation of 1.3-µm directly modulated InGaAlAs-MQW DFB lasers

Doping-type dependence of turn-on delay time in 1.3-μm InGaAsP-InP modulation-doped strained quantum-well lasers

High power COD-free operation of 0.98μm InGaAs/GaAs/InGaP lasers with non-injection regions near the facets

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