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Growth morphology and the equilibrium shape : the role of «surfactants» in Ge/Si island formation

Physical review letters, 1993-02, Vol.70 (7), p.966-969

1993

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Doping of Si thin films by low-temperature molecular beam epitaxy

Journal of applied physics, 1993-06, Vol.73 (12), p.8237-8241

1993

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Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities

Applied physics letters, 1993-08, Vol.63 (5), p.639-641

1993

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Effect of H on Si molecular-beam epitaxy

Journal of applied physics, 1993-12, Vol.74 (11), p.6615-6618

1993

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Direct imaging of a novel silicon surface reconstruction

Physical review letters, 1985-10, Vol.55 (17), p.1765-1767

1985

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Interpretation of dislocation propagation velocities in strained GexSi1-x/Si(100) heterostructures by the diffusive kink pair model

Journal of applied physics, 1991-08, Vol.70 (4), p.2052-2065

1991

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Point defects in Si thin films grown by molecular beam epitaxy

Applied physics letters, 1992-08, Vol.61 (5), p.540-542

1992

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Specular boundary scattering and electrical transport in single-crystal thin films of CoSi2

Physical review letters, 1985-04, Vol.54 (16), p.1840-1843

1985

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Design of an ultrahigh‐vacuum specimen environment for high‐resolution transmission electron microscopy

Review of scientific instruments, 1989-04, Vol.60 (4), p.700-707

1989

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Electrical transport properties of CoSi2 and NiSi2 thin films

Applied physics letters, 1984-05, Vol.44 (9), p.913-915

1984

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Influence of fluorine implant on boron diffusion: Determination of process modeling parameters

Journal of applied physics, 1995-04, Vol.77 (7), p.3056-3060

1995

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Dependence of the structural and electrical properties of ultrathin cobalt silicide films on formation conditions

Journal of materials research, 1989-02, Vol.4 (1), p.144-155

1989

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Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy

Journal of applied physics, 1993-09, Vol.74 (5), p.3150-3155

1993

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Defect distribution in low-temperature molecular beam epitaxy grown Si/Si(100), improved depth profiling with monoenergetic positrons

Applied physics letters, 1995-05, Vol.66 (21), p.2855-2857

1995

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Behavior of intrinsic Si point defects during annealing in vacuum

Applied physics letters, 1995-09, Vol.67 (11), p.1558-1560

1995

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Determination of Si self-interstitial diffusivities from the oxidation-enhanced diffusion in B doping-superlattices: The influence of the marker layers

Journal of applied physics, 1995-03, Vol.77 (5), p.1948-1951

1995

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Time dependence of dopant diffusion in δ-doped Si films and properties of Si point defects

Applied physics letters, 1994-01, Vol.64 (3), p.312-314

1994

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Origin of A- or B-type NiSii2 determined by in in situ transmission electron microscopy and diffraction during growth

Physical review letters, 1988-03, Vol.60 (12), p.1158-1161

1988

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Dopant electrical activity and majority-carrier mobility in B- and Sb-δ-doped Si thin films

Physical review. B, Condensed matter, 1993-05, Vol.47 (19), p.12618-12624

1993

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Electrical transport and in situ X-ray studies of the formation of TiSi2 thin films on Si

Applied physics letters, 1987, Vol.51 (14), p.1100-1102

1987

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Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy

Physical review. B, Condensed matter, 1993-08, Vol.48 (8), p.5345-5353

1993

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Thermal Dissociation of Hydrogen

The Journal of chemical physics, 1964-05, Vol.40 (9), p.2639-2652

1964

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Adsorption—Desorption of Hydrogen on Tungsten and Molybdenum

The Journal of chemical physics, 1964-05, Vol.40 (9), p.2626-2638

1964

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Tests of Mechanism for Ammonia Synthesis by a Molybdenum Catalyst at Very Low Pressure

The Journal of chemical physics, 1968-01, Vol.48 (12), p.5409-5431

1968

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Reaction of H2 + D2⇆2HD Catalyzed by Molybdenum and Observed by Mass Spectrometer

The Journal of chemical physics, 1968-01, Vol.48 (12), p.5378-5392

1968

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Growth morphology and the equilibrium shape : the role of «surfactants» in Ge/Si island formation

Doping of Si thin films by low-temperature molecular beam epitaxy

Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities

Effect of H on Si molecular-beam epitaxy

Direct imaging of a novel silicon surface reconstruction

Interpretation of dislocation propagation velocities in strained GexSi1-x/Si(100) heterostructures by the diffusive kink pair model

Point defects in Si thin films grown by molecular beam epitaxy

Specular boundary scattering and electrical transport in single-crystal thin films of CoSi2

Design of an ultrahigh‐vacuum specimen environment for high‐resolution transmission electron microscopy

Electrical transport properties of CoSi2 and NiSi2 thin films

Influence of fluorine implant on boron diffusion: Determination of process modeling parameters

Dependence of the structural and electrical properties of ultrathin cobalt silicide films on formation conditions

Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy

Defect distribution in low-temperature molecular beam epitaxy grown Si/Si(100), improved depth profiling with monoenergetic positrons

Behavior of intrinsic Si point defects during annealing in vacuum

Determination of Si self-interstitial diffusivities from the oxidation-enhanced diffusion in B doping-superlattices: The influence of the marker layers

Time dependence of dopant diffusion in δ-doped Si films and properties of Si point defects

Origin of A- or B-type NiSii2 determined by in in situ transmission electron microscopy and diffraction during growth

Dopant electrical activity and majority-carrier mobility in B- and Sb-δ-doped Si thin films

Electrical transport and in situ X-ray studies of the formation of TiSi2 thin films on Si

Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy

Thermal Dissociation of Hydrogen

Adsorption—Desorption of Hydrogen on Tungsten and Molybdenum

Tests of Mechanism for Ammonia Synthesis by a Molybdenum Catalyst at Very Low Pressure

Reaction of H2 + D2⇆2HD Catalyzed by Molybdenum and Observed by Mass Spectrometer

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