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Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

Applied physics letters, 2012-09, Vol.101 (12)

2012

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Origin of light instability in amorphous IGZO thin-film transistors and its suppression

Scientific reports, 2021-07, Vol.11 (1), p.14618-14618, Article 14618

2021

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Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method

IEEE electron device letters, 2015-12, Vol.36 (12), p.1332-1335

2015

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Field-induced carrier generation in amorphous-InGaZnO4 thin-film transistors

Solid state communications, 2014-09, Vol.194, p.54-58

2014

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Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress

Applied physics letters, 2013-07, Vol.103 (3)

2013

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Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics

Scientific reports, 2016-05, Vol.6 (1), p.25734-25734, Article 25734

2016

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Effect of Doping Fluorine in Offset Region on Performance of Coplanar a-IGZO TFTs

IEEE electron device letters, 2018-09, Vol.39 (9), p.1318-1321

2018

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Impact of Source-to-Gate and Drain-to-Gate Overlap Lengths on Performance of Inverted Staggered a-IGZO TFTs With an Etch Stopper

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3152-3156

2020

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Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

AIP advances, 2017-12, Vol.7 (12), p.125110-125110-7

2017

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Bending Stress Induced Performance Change in Plastic Oxide Thin-Film Transistor and Recovery by Annealing at 300 °C

IEEE electron device letters, 2017-08, Vol.38 (8), p.1035-1038

2017

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Fast Threshold Voltage Compensation AMOLED Pixel Circuit Using Secondary Gate Effect of Dual Gate a-IGZO TFTs

IEEE electron device letters, 2016-11, Vol.37 (11), p.1450-1453

2016

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Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time

Applied physics letters, 2012-09, Vol.101 (11)

2012

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Effect of SiO2 and SiO2/SiNx Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.869-874

2015

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Analysis of Improved Performance Under Negative Bias Illumination Stress of Dual Gate Driving a-IGZO TFT by TCAD Simulation

IEEE electron device letters, 2016-06, Vol.37 (6), p.735-738

2016

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Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

Applied physics letters, 2014-12, Vol.105 (23)

2014

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A Driving Method of Pixel Circuit Using a-IGZO TFT for Suppression of Threshold Voltage Shift in AMLED Displays

IEEE electron device letters, 2017-06, Vol.38 (6), p.760-762

2017

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Reduction of Bias and Light Instability of Mixed Oxide Thin-Film Transistors

Applied sciences, 2017-08, Vol.7 (9), p.885

2017

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Circular Structure for High Mechanical Bending Stability of a-IGZO TFTs

IEEE journal of the Electron Devices Society, 2017-11, Vol.5 (6), p.453-457

2017

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Characterization and Modeling of a-IGZO TFTs

Journal of display technology, 2015-06, Vol.11 (6), p.497-505

2015

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Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-05, Vol.33 (3)

2015

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66‐4: High Brightness Active Matrix Micro‐LEDs with LTPS TFT Backplane

SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.880-883

2018

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Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C

Applied physics letters, 2018-04, Vol.112 (16)

2018

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Active‐Matrix GaN µ‐LED Display Using Oxide Thin‐Film Transistor Backplane and Flip Chip LED Bonding

Advanced electronic materials, 2019-03, Vol.5 (3), p.n/a

2019

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Thermal Stability Improvement of Back Channel Etched a-IGZO TFTs by Using Fluorinated Organic Passivation

ECS journal of solid state science and technology, 2018, Vol.7 (6), p.Q123-Q126

2018

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Enhanced Operation of Back-Channel-Etched a-IGZO TFTs by Fluorine Treatment during Source/Drain Wet-Etching

ECS journal of solid state science and technology, 2017, Vol.6 (5), p.P300-P303

2017

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Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

Origin of light instability in amorphous IGZO thin-film transistors and its suppression

Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method

Field-induced carrier generation in amorphous-InGaZnO4 thin-film transistors

Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress

Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics

Effect of Doping Fluorine in Offset Region on Performance of Coplanar a-IGZO TFTs

Impact of Source-to-Gate and Drain-to-Gate Overlap Lengths on Performance of Inverted Staggered a-IGZO TFTs With an Etch Stopper

Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

Bending Stress Induced Performance Change in Plastic Oxide Thin-Film Transistor and Recovery by Annealing at 300 °C

Fast Threshold Voltage Compensation AMOLED Pixel Circuit Using Secondary Gate Effect of Dual Gate a-IGZO TFTs

Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time

Effect of SiO2 and SiO2/SiNx Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

Analysis of Improved Performance Under Negative Bias Illumination Stress of Dual Gate Driving a-IGZO TFT by TCAD Simulation

Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

A Driving Method of Pixel Circuit Using a-IGZO TFT for Suppression of Threshold Voltage Shift in AMLED Displays

Reduction of Bias and Light Instability of Mixed Oxide Thin-Film Transistors

Circular Structure for High Mechanical Bending Stability of a-IGZO TFTs

Characterization and Modeling of a-IGZO TFTs

Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors

66‐4: High Brightness Active Matrix Micro‐LEDs with LTPS TFT Backplane

Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C

Active‐Matrix GaN µ‐LED Display Using Oxide Thin‐Film Transistor Backplane and Flip Chip LED Bonding

Thermal Stability Improvement of Back Channel Etched a-IGZO TFTs by Using Fluorinated Organic Passivation

Enhanced Operation of Back-Channel-Etched a-IGZO TFTs by Fluorine Treatment during Source/Drain Wet-Etching

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