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Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment

Physical review. B, 2019, Vol.100 (1), p.014103, Article 014103

2019

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Divacancy in 4H-SiC

Physical review letters, 2006-02, Vol.96 (5), p.055501-055501, Article 055501

2006

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Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology

Physical review applied, 2019-07, Vol.12 (1)

2019

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Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure

Physica. E, Low-dimensional systems & nanostructures, 2014-09, Vol.63, p.87-92

2014

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SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

IEEE electron device letters, 2008-07, Vol.29 (7), p.728-730

2008

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Some new constructions of minimal efficient circular nearly strongly balanced neighbor designs

Journal of King Saud University. Science, 2023-08, Vol.35 (6), p.102748, Article 102748

2023

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Graphene self-switching diodes as zero-bias microwave detectors

Applied physics letters, 2015-03, Vol.106 (9), p.093116

2015

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Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques

Chemical vapor deposition, 2006-08, Vol.12 (8-9), p.475-482

2006

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Publisher’s Note: Divacancy in 4H-SiC [Phys. Rev. Lett. 96 , 055501 (2006)]

Physical review letters, 2006-02, Vol.96 (6), Article 069902

2006

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A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates

Materials science forum, 2013, Vol.740-742, p.129-132

2013

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On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications

9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russia, 2013, Vol.740-742, p.173-176

2013

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Optical Properties of Vanadium in 4 H Silicon Carbide for Quantum Technology

Physical review applied, 2019-07, Vol.12 (1), Article 014015

2019

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Structural instabilities in growth of SiC crystals

Journal of crystal growth, 2005-02, Vol.275 (1), p.e461-e466

2005

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Enzymatic method for assaying calcium in serum with Ca++ -ATPase

Experimental & molecular medicine, 2003-02, Vol.35 (1), p.17-22

2003

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Sorption and Leaching Potential of Isoproturon and Atrazine in Low Organic Carbon Soil of Pakistan Under a Wheat-Maize Rotation

Pedosphere, 2016-10, Vol.26 (5), p.687-698

2016

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Alkaline-SDS cell lysis of microbes with acetone protein precipitation for proteomic sample preparation in 96-well plate format

PloS one, 2023-07, Vol.18 (7), p.e0288102-e0288102

2023

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A DC Comparison Study Between H-Intercalated and Native epigraphenes on SiC substrates

Materials Science Forum, 2013, Vol.740-742, p.129

2013

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Electrical and optical control of single spins integrated in scalable semiconductor devices

Science (American Association for the Advancement of Science), 2019-12, Vol.366 (6470), p.1225-1230

2019

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Stark tuning and electrical charge state control of single divacancies in silicon carbide

Applied physics letters, 2017-12, Vol.111 (26)

2017

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Isolated electron spins in silicon carbide with millisecond coherence times

Nature materials, 2015-02, Vol.14 (2), p.160-163

2015

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Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

Physical review. X, 2017-06, Vol.7 (2), p.021046, Article 021046

2017

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Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Nano letters, 2019-10, Vol.19 (10), p.7173-7180

2019

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Membrane protein extraction and purification using styrene-maleic acid (SMA) copolymer: effect of variations in polymer structure

Biochemical journal, 2016-12, Vol.473 (23), p.4349-4360

2016

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Diabetic cardiomyopathy - A comprehensive updated review

Progress in cardiovascular diseases, 2019-07, Vol.62 (4), p.315-326

2019

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Defects and carrier compensation in semi-insulating 4 H − Si C substrates

Physical review. B, Condensed matter and materials physics, 2007-04, Vol.75 (15), Article 155204

2007

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Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment

Divacancy in 4H-SiC

Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology

Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

Some new constructions of minimal efficient circular nearly strongly balanced neighbor designs

Graphene self-switching diodes as zero-bias microwave detectors

Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques

Publisher’s Note: Divacancy in 4H-SiC [Phys. Rev. Lett. 96 , 055501 (2006)]

A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates

On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications

Optical Properties of Vanadium in 4 H Silicon Carbide for Quantum Technology

Structural instabilities in growth of SiC crystals

Enzymatic method for assaying calcium in serum with Ca++ -ATPase

Sorption and Leaching Potential of Isoproturon and Atrazine in Low Organic Carbon Soil of Pakistan Under a Wheat-Maize Rotation

Alkaline-SDS cell lysis of microbes with acetone protein precipitation for proteomic sample preparation in 96-well plate format

A DC Comparison Study Between H-Intercalated and Native epigraphenes on SiC substrates

Electrical and optical control of single spins integrated in scalable semiconductor devices

Stark tuning and electrical charge state control of single divacancies in silicon carbide

Isolated electron spins in silicon carbide with millisecond coherence times

Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Membrane protein extraction and purification using styrene-maleic acid (SMA) copolymer: effect of variations in polymer structure

Diabetic cardiomyopathy - A comprehensive updated review

Defects and carrier compensation in semi-insulating 4 H − Si C substrates

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