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Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam

Scientific reports, 2021-10, Vol.11 (1), p.20660-20660, Article 20660

2021

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Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs

Applied physics express, 2019-05, Vol.12 (5), p.54001

2019

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Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

Applied physics express, 2017-12, Vol.10 (12), p.121004

2017

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Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams

physica status solidi (b), 2018-04, Vol.255 (4), p.n/a

2018

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Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Journal of applied physics, 2024-05, Vol.135 (18)

2024

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Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes

Japanese Journal of Applied Physics, 2021-05, Vol.60 (5), p.56503

2021

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Fiber optic-type compact dosimeter using Nd:YAG for basement investigation inside primary containment vessel

Journal of nuclear science and technology, 2019-10, Vol.56 (9-10), p.822-830

2019

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Four Species of Ericaceae, Newly Naturalized in Nagano Prefecture, Japan

The Journal of Japanese Botany, 2021/02/20, Vol.96(1), pp.57-61

2021

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Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Nanoscale research letters, 2018-12, Vol.13 (1), p.403-8, Article 403

2018

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A Small-flower Form of Gentiana zollingeri (Gentianaceae) Found from Kochi and Gifu Prefectures, Japan

The Journal of Japanese Botany, 2020/06/20, Vol.95(3), pp.162-166

2020

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High-temperature characteristics of charge collection efficiency using single CVD diamond detectors

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2015-07, Vol.789, p.50-56

2015

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Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC0802

2019

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Heat and radiation resistances of diamond semiconductor in gamma-ray detection

Japanese Journal of Applied Physics, 2019-10, Vol.58 (10), p.106509

2019

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Dennstaedtia punctilobula (Dennstaedtiaceae), Newly Naturalized in Nagano Prefecture, Japan

The Journal of Japanese Botany, 2019/02/20, Vol.94(1), pp.58-60

2019

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A New Variety of Halenia corniculata (Gentianaceae) from Nagano Prefecture, Central Japan

The Journal of Japanese Botany, 2019/08/20, Vol.94(4), pp.255-258

2019

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Optically Stimulated Luminescence Analysis Method for High Dose Rate Using an Optical Fiber Type Dosimeter

IEEE transactions on nuclear science, 2016-08, Vol.63 (4), p.2262-2270

2016

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Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam

Physica Status Solidi. B: Basic Solid State Physics, 2015-12, Vol.252 (12), p.2794-2801

2015

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Suppression of threshold voltage shift due to positive bias stress in GaN planar MOSFETs by post-deposition annealing

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

2024

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Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate

Applied physics express, 2017-06, Vol.10 (6), p.61002

2017

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Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Japanese Journal of Applied Physics, 2017-03, Vol.56 (3), p.31001-031001

2017

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Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation

physica status solidi (b), 2024-05, Vol.261 (5), p.n/a

2024

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Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process

Japanese Journal of Applied Physics, 2020-04, Vol.59, p.1

2020

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Demonstration of 1200 V/1.4 mΩ cm 2 vertical GaN planar MOSFET fabricated by an all ion implantation process

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGD02

2020

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Real-time Simulation Methods for Robots with a Flexible Arm Based on Computer Graphics Technology

International journal of mechanical engineering and applications (Print), 2021, Vol.9 (6), p.90

2021

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Fiber optic-type dosimetry for remote measurement of dose rate distribution in high radiation and narrow environment

Journal of the Atomic Energy Society of Japan, 2020, Vol.62 (12), p.717-721

2020

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Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam

Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs

Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams

Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes

Fiber optic-type compact dosimeter using Nd:YAG for basement investigation inside primary containment vessel

Four Species of Ericaceae, Newly Naturalized in Nagano Prefecture, Japan

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

A Small-flower Form of Gentiana zollingeri (Gentianaceae) Found from Kochi and Gifu Prefectures, Japan

High-temperature characteristics of charge collection efficiency using single CVD diamond detectors

Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures

Heat and radiation resistances of diamond semiconductor in gamma-ray detection

Dennstaedtia punctilobula (Dennstaedtiaceae), Newly Naturalized in Nagano Prefecture, Japan

A New Variety of Halenia corniculata (Gentianaceae) from Nagano Prefecture, Central Japan

Optically Stimulated Luminescence Analysis Method for High Dose Rate Using an Optical Fiber Type Dosimeter

Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam

Suppression of threshold voltage shift due to positive bias stress in GaN planar MOSFETs by post-deposition annealing

Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation

Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process

Demonstration of 1200 V/1.4 mΩ cm 2 vertical GaN planar MOSFET fabricated by an all ion implantation process

Real-time Simulation Methods for Robots with a Flexible Arm Based on Computer Graphics Technology

Fiber optic-type dosimetry for remote measurement of dose rate distribution in high radiation and narrow environment

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