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Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer

Journal of crystal growth, 2015-03, Vol.414, p.258-262

2015

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The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer

Journal of crystal growth, 2007-08, Vol.306 (2), p.283-287

2007

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Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition

Applied surface science, 2009-05, Vol.255 (15), p.6809-6813

2009

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Morphology and optical properties of zinc oxide thin films grown on Si (100) by metal-organic chemical vapor deposition

Journal of materials science. Materials in electronics, 2009, Vol.20 (Suppl 1), p.441-445

2009

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Persistent photoconductivity in Ho-doped InGaAsP epitaxial layers

Solid state communications, 2002-08, Vol.123 (10), p.421-425

2002

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Influence of holmium doping on the optical properties of quaternary InGaAsP epitaxial layers

Solid state communications, 2001-11, Vol.120 (12), p.501-504

2001

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Observation of persistent photoconductivity in quaternary InGaAsP epitaxial layers

Semiconductor science and technology, 2002-11, Vol.17 (11), p.L72-L75

2002

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Investigation of arsenic-doped ZnO thin films grown on Si substrate by atmospheric-pressure metal-organic chemical vapor deposition

Physica status solidi. A, Applications and materials science, 2012-06, Vol.209 (6), p.1053-1058

2012

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Optical properties of the ZnSe1−xTex epilayers grown by molecular beam epitaxy

Journal of applied physics, 1998-03, Vol.83 (5), p.2555-2559

1998

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Optical properties of Nd-doped InGaAsP epilayers

Solid state communications, 2004, Vol.129 (1), p.47-50

2004

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Nanostructured surface morphology of ZnO grown on p-type GaN and Si by metal organic chemical vapor deposition

Applied surface science, 2008-12, Vol.255 (5), p.3016-3018

2008

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Growth of GaAs on Si by employing AlAs/GaAs double amorphous buffer

Journal of crystal growth, 1993-03, Vol.128 (1), p.521-526

1993

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Optical studies of the Holmium-doped InGaAsP epilayers

Physica status solidi. A, Applied research, 2003-12, Vol.200 (2), p.439-445

2003

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Characterizations of ZnTe bulks grown by temperature gradient solution growth

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-01, Vol.106 (1), p.27-32

2004

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Characterizations of gallium-doped ZnO films on glass substrate prepared by atmospheric pressure metal-organic chemical vapor deposition

Thin solid films, 2009-07, Vol.517 (18), p.5537-5542

2009

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Comparative study of amorphous and crystalline buffer layers in MBE growth of GaAs on Si

Journal of crystal growth, 1991-12, Vol.115 (1), p.122-127

1991

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Fabrication of Cu―Zn―Se ternary compounds by AP-MOCVD

Journal of crystal growth, 2013-10, Vol.381, p.144-147

2013

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A Nonlinear Three-Dimensional Rupture Theory of Thin Liquid Films

Journal of colloid and interface science, 1997-06, Vol.190 (1), p.250-252

1997

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Liquid-phase epitaxial lateral overgrowth of GaAs on 0.3 °-misoriented epitaxial Si substrates

Materials chemistry and physics, 1995, Vol.42 (4), p.231-236

1995

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Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2007-07, Vol.25 (4), p.701-705

2007

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Nonlinear Rupture Theory of a Thin Liquid Film With Insoluble Surfactant

Journal of fluids engineering, 1998-09, Vol.120 (3), p.598-604

1998

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Epitaxial growth of high-quality GaN on appropriately nitridated Si substrate by metal organic chemical vapor deposition

Journal of crystal growth, 2005-07, Vol.280 (3), p.335-340

2005

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A Nonlinear Rupture Theory of Thin Liquid Films with Soluble Surfactant

Journal of colloid and interface science, 2000-11, Vol.231 (2), p.379-393

2000

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Nonlinear Spreading Dynamics of a Localized Soluble Surfactant on a Thin Liquid Film

Journal of the Physical Society of Japan, 2002-11, Vol.71 (11), p.2708-2714

2002

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Low-temperature electrical characterizations of InAs1−x−ySbyPx photodiodes fabricated by liquid-phase epitaxy

Solid-state electronics, 2002-09, Vol.46 (9), p.1405-1409

2002

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Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer

The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer

Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition

Morphology and optical properties of zinc oxide thin films grown on Si (100) by metal-organic chemical vapor deposition

Persistent photoconductivity in Ho-doped InGaAsP epitaxial layers

Influence of holmium doping on the optical properties of quaternary InGaAsP epitaxial layers

Observation of persistent photoconductivity in quaternary InGaAsP epitaxial layers

Investigation of arsenic-doped ZnO thin films grown on Si substrate by atmospheric-pressure metal-organic chemical vapor deposition

Optical properties of the ZnSe1−xTex epilayers grown by molecular beam epitaxy

Optical properties of Nd-doped InGaAsP epilayers

Nanostructured surface morphology of ZnO grown on p-type GaN and Si by metal organic chemical vapor deposition

Growth of GaAs on Si by employing AlAs/GaAs double amorphous buffer

Optical studies of the Holmium-doped InGaAsP epilayers

Characterizations of ZnTe bulks grown by temperature gradient solution growth

Characterizations of gallium-doped ZnO films on glass substrate prepared by atmospheric pressure metal-organic chemical vapor deposition

Comparative study of amorphous and crystalline buffer layers in MBE growth of GaAs on Si

Fabrication of Cu―Zn―Se ternary compounds by AP-MOCVD

A Nonlinear Three-Dimensional Rupture Theory of Thin Liquid Films

Liquid-phase epitaxial lateral overgrowth of GaAs on 0.3 °-misoriented epitaxial Si substrates

Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method

Nonlinear Rupture Theory of a Thin Liquid Film With Insoluble Surfactant

Epitaxial growth of high-quality GaN on appropriately nitridated Si substrate by metal organic chemical vapor deposition

A Nonlinear Rupture Theory of Thin Liquid Films with Soluble Surfactant

Nonlinear Spreading Dynamics of a Localized Soluble Surfactant on a Thin Liquid Film

Low-temperature electrical characterizations of InAs1−x−ySbyPx photodiodes fabricated by liquid-phase epitaxy

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