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GaN-on-Si Power Technology: Devices and Applications

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795

2017

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Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Applied physics letters, 2015-10, Vol.107 (16)

2015

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Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3393-3399

2007

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Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.41-44

2015

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Recent advances in GaN transistors for future emerging applications

Physica status solidi. A, Applications and materials science, 2009-06, Vol.206 (6), p.1221-1227

2009

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Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1026-1031

2017

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99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2011, p.481-484

2011

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Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.04DF07-04DF07-5

2011

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GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS

International journal of high speed electronics, 2009-03, Vol.19 (1), p.145-152

2009

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Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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Polarization engineering in GaN power transistors

Physica status solidi. B. Basic research, 2010-07, Vol.247 (7), p.1735-1739

2010

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(Invited) GaN Power Electron Devices

ECS transactions, 2011, Vol.41 (8), p.51-70

2011

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AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

IEEE transactions on electron devices, 2010-05, Vol.57 (5), p.980-985

2010

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Reliability of hybrid-drain-embedded gate injection transistor

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.4B-2.1-4B-2.10

2017

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Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.4E.2-1-4E.2-7

2018

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Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.23-26

2016

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Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

IEEE electron device letters, 2008-10, Vol.29 (10), p.1087-1089

2008

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AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

IEEE transactions on electron devices, 2005-09, Vol.52 (9), p.1963-1968

2005

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A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1893-1899

2005

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Development Status of New Material Power Devices

Denki Gakkai ronbunshi. C, Erekutoronikusu, joho kogaku, shisutemu, 2017, Vol.137 (1), p.13-19

2017

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A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer

IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.299-302

2005

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Temperature-dependent current-voltage characteristics of fully processed Ba0.7Sr0.3TiO3 capacitors integrated in a silicon device

Japanese journal of applied physics, 1996, Vol.35 (1A), p.140-143

1996

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Ferroelectric nonvolatile memory technology and its applications

Japanese Journal of Applied Physics, 1996, Vol.35 (2B), p.1516-1520

1996

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Source resistance reduction of AlGaN-GaN HFETs with novel superlattice cap layer

IEEE transactions on electron devices, 2005-06, Vol.52 (6), p.1042-1047

2005

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Recent Advances in GaN Power Switching Devices

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010, p.1-4

2010

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GaN-on-Si Power Technology: Devices and Applications

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

Recent advances in GaN transistors for future emerging applications

Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors

99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors

GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS

Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors

Polarization engineering in GaN power transistors

(Invited) GaN Power Electron Devices

AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

Reliability of hybrid-drain-embedded gate injection transistor

Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations

Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

Development Status of New Material Power Devices

A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer

Temperature-dependent current-voltage characteristics of fully processed Ba0.7Sr0.3TiO3 capacitors integrated in a silicon device

Ferroelectric nonvolatile memory technology and its applications

Source resistance reduction of AlGaN-GaN HFETs with novel superlattice cap layer

Recent Advances in GaN Power Switching Devices

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