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Effects of Yb impurity on Er-related emission in Al0.70Ga0.30As:Er,Yb epitaxially grown on GaAs substrate

Physica status solidi. A, Applications and materials science, 2008-01, Vol.205 (1), p.60-63

2008

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Surface morphology and luminescence characterization of β-FeSi 2 thin films prepared by pulsed laser deposition

Applied surface science, 2009-11, Vol.256 (4), p.1227-1231

2009

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Growth of Si0.5Ge0.5 Single Crystals by the Traveling Liquidus-zone Method and their Structural Characterization

Procedia engineering, 2012, Vol.36, p.404-410

2012

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Deposition of TaN Films by RF Sputtering and Their Barrier Properties in Cu/TaN/Dielectrics/Si MIS Structures

e-Journal of Surface Science and Nanotechnology, 2012/04/21, Vol.10, pp.107-113

2012

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Characterization of a New Cleaning Method Using Electrolytic Ionized Water for Polysilicon Chemical Mechanical Polishing Process

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 8), p.5098-5103

2002

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Development of Dishing-less Slurry for Polysilicon Chemical-Mechanical Polishing Process

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 9A), p.5433-5437

2003

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Optical absorption and photoluminescence studies of β-FeSi2 prepared by heavy implantation of Fe+ ions into Si

Journal of applied physics, 1996-11, Vol.80 (10), p.5955-5962

1996

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Oxygen Plasma Damage in GaAs Directly Exposed to Surface-Wave Plasma

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 9), p.5762-5768

2002

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Evaluation of Oxygen-Plasma Damage in GaAs Exposed to a Surface-Wave Plasma Source Developed for the Ashing Process

Japanese Journal of Applied Physics, 2001, Vol.40 (9R), p.5438-5443

2001

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Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Journal of the Electrochemical Society, 2005, Vol.152 (6), p.G506

2005

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A New Cleaning Technique for Corrosion Protection in Aluminum Metallization

MRS proceedings, 2003, Vol.767, Article F7.2

2003

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Obtaining high rates for the etching and ashing for large liquid-crystal display substrates by using a surface-wave plasma source

Electronics & communications in Japan. Part 2, Electronics, 2004-06, Vol.87 (6), p.28-38

2004

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Effect of multiple-step annealing on the formation of semiconducting β-FeSi2 and metallic α-Fe2Si5 on Si (100) by ion beam synthesis

Japanese journal of applied physics, 1997, Vol.36 (5A), p.2802-2812

1997

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Infrared thermal chemical vapor deposition of thin SiN film on InP : dependence of deposition rate and film characteristics on pressure and gas flux ratio

Japanese Journal of Applied Physics, 1994, Vol.33 (5A), p.2679-2683

1994

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Evaluation on Crystal and Optical Properties of AlN:Er Prepared by RF magnetron sputtering method

MRS proceedings, 2006, Vol.955, Article 0955-I15-03

2006

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Copper Surface Analyses after Cu CMP Processing

Electrochemistry, 2004/08/05, Vol.72(8), pp.569-576

2004

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Optical Properties of Al0.70Ga0.30As:Er,Yb

MRS proceedings, 2002, Vol.744

2002

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Conditions for the formation of defect-induced bound exciton emissions in GaAs grown by molecular beam epitaxy

Applied physics letters, 1993-03, Vol.62 (13), p.1527-1529

1993

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Luminescence Properties of Eu ion-implanted GaN

MRS proceedings, 2003, Vol.798, Article Y5.7

2003

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Photoluminescence and Raman scattering studies of 2 MeV Yb+-implanted InP as a function of etching depth

Journal of applied physics, 1996-08, Vol.80 (4), p.2383-2387

1996

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Electrical Properties of β -FeSi2/Si Hetero-Diode Improved by Pulsed Laser Annealing

MRS proceedings, 2003, Vol.799

2003

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Composition of β-FeSi2 Thin-Films Grown by a Pulsed Laser Deposition Method

MRS proceedings, 2002, Vol.744

2002

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A Characterization of New Cleaning Method Using Electrolytic Ionized Water for Poly Si Cmp Process

MRS proceedings, 2001, Vol.671, Article M5.7

2001

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Synthesis of β-FeSi2 for optical applications by Fe triple-energy ion implantation into Si(100) and Si(111) substrates

Thin solid films, 1996-08, Vol.281-282, p.252-255

1996

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Stability evaluation of inference methods for optoelectronic fuzzy inference system

Optical review (Tokyo, Japan), 1994-01, Vol.1 (2), p.150-152

1994

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Effects of Yb impurity on Er-related emission in Al0.70Ga0.30As:Er,Yb epitaxially grown on GaAs substrate

Surface morphology and luminescence characterization of β-FeSi 2 thin films prepared by pulsed laser deposition

Growth of Si0.5Ge0.5 Single Crystals by the Traveling Liquidus-zone Method and their Structural Characterization

Deposition of TaN Films by RF Sputtering and Their Barrier Properties in Cu/TaN/Dielectrics/Si MIS Structures

Characterization of a New Cleaning Method Using Electrolytic Ionized Water for Polysilicon Chemical Mechanical Polishing Process

Development of Dishing-less Slurry for Polysilicon Chemical-Mechanical Polishing Process

Optical absorption and photoluminescence studies of β-FeSi2 prepared by heavy implantation of Fe+ ions into Si

Oxygen Plasma Damage in GaAs Directly Exposed to Surface-Wave Plasma

Evaluation of Oxygen-Plasma Damage in GaAs Exposed to a Surface-Wave Plasma Source Developed for the Ashing Process

Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

A New Cleaning Technique for Corrosion Protection in Aluminum Metallization

Obtaining high rates for the etching and ashing for large liquid-crystal display substrates by using a surface-wave plasma source

Effect of multiple-step annealing on the formation of semiconducting β-FeSi2 and metallic α-Fe2Si5 on Si (100) by ion beam synthesis

Infrared thermal chemical vapor deposition of thin SiN film on InP : dependence of deposition rate and film characteristics on pressure and gas flux ratio

Evaluation on Crystal and Optical Properties of AlN:Er Prepared by RF magnetron sputtering method

Copper Surface Analyses after Cu CMP Processing

Optical Properties of Al0.70Ga0.30As:Er,Yb

Conditions for the formation of defect-induced bound exciton emissions in GaAs grown by molecular beam epitaxy

Luminescence Properties of Eu ion-implanted GaN

Photoluminescence and Raman scattering studies of 2 MeV Yb+-implanted InP as a function of etching depth

Electrical Properties of β -FeSi2/Si Hetero-Diode Improved by Pulsed Laser Annealing

Composition of β-FeSi2 Thin-Films Grown by a Pulsed Laser Deposition Method

A Characterization of New Cleaning Method Using Electrolytic Ionized Water for Poly Si Cmp Process

Synthesis of β-FeSi2 for optical applications by Fe triple-energy ion implantation into Si(100) and Si(111) substrates

Stability evaluation of inference methods for optoelectronic fuzzy inference system

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