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Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Journal of applied physics, 2016-12, Vol.120 (21)

2016

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Annealing behaviors of open spaces and gas desorption in chemical vapor deposited SiO2 studied with monoenergetic positron beams

Journal of applied physics, 2024-07, Vol.136 (4)

2024

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Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys

Journal of physics. Condensed matter, 2019-11, Vol.31 (47), p.475401-475401

2019

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Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam

Scientific reports, 2021-10, Vol.11 (1), p.20660-20660, Article 20660

2021

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Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Journal of applied physics, 2022-08, Vol.132 (6)

2022

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Free volumes introduced by fractures of CFRP probed using positron annihilation

Composites. Part A, Applied science and manufacturing, 2019-07, Vol.122, p.54-58

2019

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Defect‐Resistant Radiative Performance of m‐Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep‐Ultraviolet and Visible Polarized Light Emitters

Advanced materials (Weinheim), 2017-02, Vol.29 (5), p.n/a

2017

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Impact of nanosecond laser annealing on vacancies in electroplated Cu films studied by monoenergetic positron beams

Journal of applied physics, 2023-10, Vol.134 (13)

2023

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Effect of conversion on epoxy resin properties: Combined molecular dynamics simulation and experimental study

Polymer (Guilford), 2022-07, Vol.254, p.125041, Article 125041

2022

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Vacancy-type defects in bulk GaN grown by oxide vapor phase epitaxy probed using positron annihilation

Journal of crystal growth, 2021-09, Vol.570, p.126219, Article 126219

2021

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Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams

Journal of applied physics, 2020-02, Vol.127 (5)

2020

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Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams

Journal of applied physics, 2020-08, Vol.128 (8)

2020

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Characterization of the distribution of defects introduced by plasma exposure in Si substrate

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2019-01, Vol.37 (1)

2019

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Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Scientific reports, 2020-10, Vol.10 (1), p.17349-17349, Article 17349

2020

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Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam

Japanese Journal of Applied Physics, 2021-01, Vol.60 (1), p.16502

2021

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Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams

physica status solidi (b), 2018-04, Vol.255 (4), p.n/a

2018

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Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Journal of applied physics, 2024-05, Vol.135 (18)

2024

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Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

physica status solidi (b), 2022-10, Vol.259 (10), p.n/a

2022

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Growth of high-quality GaN by halogen-free vapor phase epitaxy

Applied physics express, 2020-08, Vol.13 (8), p.85509

2020

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Temporary Direct Bonding by Low Temperature Deposited SiO2 for Chiplet Applications

ACS applied electronic materials, 2024-04, Vol.6 (4), p.2449-2456

2024

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Mg implantation in AlN layers on sapphire substrates

Japanese Journal of Applied Physics, 2023-02, Vol.62 (2), p.20901

2023

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Pore structure analysis of ionic liquid-templated porous silica using positron annihilation lifetime spectroscopy

Microporous and mesoporous materials, 2020-03, Vol.295, p.109964, Article 109964

2020

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Interfacial Conductivity Enhancement and Pore Confinement Conductivity-Lowering Behavior inside the Nanopores of Solid Silica-gel Nanocomposite Electrolytes

ACS applied materials & interfaces, 2021-09, Vol.13 (34), p.40543-40551

2021

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Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation

Journal of crystal growth, 2017-10, Vol.475, p.261-265

2017

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Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

physica status solidi (b), 2019-10, Vol.256 (10), p.n/a

2019

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Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Annealing behaviors of open spaces and gas desorption in chemical vapor deposited SiO2 studied with monoenergetic positron beams

Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys

Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam

Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Free volumes introduced by fractures of CFRP probed using positron annihilation

Defect‐Resistant Radiative Performance of m‐Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep‐Ultraviolet and Visible Polarized Light Emitters

Impact of nanosecond laser annealing on vacancies in electroplated Cu films studied by monoenergetic positron beams

Effect of conversion on epoxy resin properties: Combined molecular dynamics simulation and experimental study

Vacancy-type defects in bulk GaN grown by oxide vapor phase epitaxy probed using positron annihilation

Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams

Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams

Characterization of the distribution of defects introduced by plasma exposure in Si substrate

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam

Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams

Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

Growth of high-quality GaN by halogen-free vapor phase epitaxy

Temporary Direct Bonding by Low Temperature Deposited SiO2 for Chiplet Applications

Mg implantation in AlN layers on sapphire substrates

Pore structure analysis of ionic liquid-templated porous silica using positron annihilation lifetime spectroscopy

Interfacial Conductivity Enhancement and Pore Confinement Conductivity-Lowering Behavior inside the Nanopores of Solid Silica-gel Nanocomposite Electrolytes

Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation

Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

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