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GaN power devices: current status and future challenges

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC0804

Ueda, Tetsuzo

2019

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GaN-on-Si Power Technology: Devices and Applications

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795

2017

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Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Journal of applied physics, 2017-01, Vol.121 (3)

2017

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GaN transistors on Si for switching and high-frequency applications

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100214-1-100214-8

2014

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Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Applied physics letters, 2015-10, Vol.107 (16)

2015

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Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3393-3399

2007

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Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures

Applied physics letters, 2017-07, Vol.111 (4)

2017

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Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CF07-04CF07-5

2013

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Recent advances in GaN transistors for future emerging applications

Physica status solidi. A, Applications and materials science, 2009-06, Vol.206 (6), p.1221-1227

2009

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Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire

Journal of applied physics, 2007-11, Vol.102 (9)

2007

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Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.41-44

2015

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Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5), p.54101

2016

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Separation of Thin GaN from Sapphire by Laser Lift-Off Technique

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.041001-041001-6

2011

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Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S3), p.6

2018

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Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S3), p.6

2018

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GaN on Si Technologies for Power Switching Devices

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3053-3059

2013

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Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors

Japanese Journal of Applied Physics, 2019-03, Vol.58 (3), p.030902

2019

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99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2011, p.481-484

2011

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SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S3)

2018

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Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: Key role of Al capping layers in interface scavenging reactions

Applied physics express, 2016-10, Vol.9 (10), p.105801

2016

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Reliability issues in GaN and SiC power devices

2014 IEEE International Reliability Physics Symposium, 2014, p.3D.4.1-3D.4.6

Ueda, Tetsuzo

2014

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Crystalline SiN x Ultrathin Films Grown on AlGaN/GaN Using In Situ Metalorganic Chemical Vapor Deposition

Journal of electronic materials, 2008-05, Vol.37 (5), p.628-634

2008

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Characteristics of Isolated DC-DC Converter With Class Phi-2 Inverter Under Various Load Conditions

IEEE transactions on power electronics, 2019-11, Vol.34 (11), p.10887-10897

2019

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Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl3 and NH3

Jpn J Appl Phys, 2011-08, Vol.50 (8), p.085501-085501-5

2011

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GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS

International journal of high speed electronics, 2009-03, Vol.19 (1), p.145-152

2009

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GaN power devices: current status and future challenges

GaN-on-Si Power Technology: Devices and Applications

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

GaN transistors on Si for switching and high-frequency applications

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures

Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors

Recent advances in GaN transistors for future emerging applications

Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire

Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor

Separation of Thin GaN from Sapphire by Laser Lift-Off Technique

Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

GaN on Si Technologies for Power Switching Devices

Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors

99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: Key role of Al capping layers in interface scavenging reactions

Reliability issues in GaN and SiC power devices

Crystalline SiN x Ultrathin Films Grown on AlGaN/GaN Using In Situ Metalorganic Chemical Vapor Deposition

Characteristics of Isolated DC-DC Converter With Class Phi-2 Inverter Under Various Load Conditions

Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl3 and NH3

GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS

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