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Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3393-3399

2007

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IEEE_Xplore

Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

Applied physics letters, 2011-08, Vol.99 (9), p.093506-093506-3

2011

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Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

IEEE electron device letters, 2008-10, Vol.29 (10), p.1087-1089

2008

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IEEE_Xplore

Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

Applied physics letters, 2010-12, Vol.97 (26), p.263501-263501-3

2010

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AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

IEEE transactions on electron devices, 2005-09, Vol.52 (9), p.1963-1968

2005

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IEEE_Xplore

Electron and hole-related luminescence processes in gate injection transistors

Applied physics letters, 2010-07, Vol.97 (3), p.033506-033506-3

2010

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Data on processing of Ti-25Nb-25Zr β-titanium alloys via powder metallurgy route: Methodology, microstructure and mechanical properties

Data in brief, 2018-04, Vol.17, p.703-708

2018

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Extensive Analysis of the Degradation of Blu-Ray Laser Diodes

IEEE electron device letters, 2008-06, Vol.29 (6), p.578-581

2008

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IEEE_Xplore

Polarization Control of Vertical-Cavity Surface-Emitting Lasers by Utilizing Surface Plasmon Resonance

IEEE journal of quantum electronics, 2007-12, Vol.43 (12), p.1123-1128

2007

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IEEE_Xplore

Mechatronic design of a ball-on-plate balancing system

Mechatronics (Oxford), 2002-03, Vol.12 (2), p.217-228

2002

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A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1893-1899

2005

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IEEE_Xplore

Cyclic shear behavior of conventional and harmonic structure-designed Ti-25Nb-25Zr β-titanium alloy: Back-stress hardening and twinning inhibition

Scripta materialia, 2017-09, Vol.138, p.44-47

2017

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Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates

IEEE journal of quantum electronics, 2008-10, Vol.44 (10), p.984-989

2008

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IEEE_Xplore

Degradation of InGaN-Based Laser Diodes Related to Nonradiative Recombination

IEEE electron device letters, 2009-04, Vol.30 (4), p.356-358

2009

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IEEE_Xplore

Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

IEEE electron device letters, 2012-03, Vol.33 (3), p.375-377

2012

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IEEE_Xplore

Analysis of the Role of Current, Temperature, and Optical Power in the Degradation of InGaN-Based Laser Diodes

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.222-228

2009

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IEEE_Xplore

Dynamic Hall-Petch versus grain-size gradient effects on the mechanical behavior under simple shear loading of β-titanium Ti-25Nb-25Zr alloys

Materials letters, 2017-11, Vol.206, p.214-216

2017

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Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1510-1514

2001

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IEEE_Xplore

Experimental and theoretical examination of orientation effect on piezoelectric charge at gate periphery in AlGaN/GaN HFETs

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1524-1529

2006

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IEEE_Xplore

Degradation of InGaN-based laser diodes due to increased non-radiative recombination rate

Physica status solidi. A, Applications and materials science, 2010-01, Vol.207 (1), p.41-44

2010

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A MOS Image Sensor With a Digital-Microlens

IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.986-991

2008

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IEEE_Xplore

P2.01-97 Prognostic Factors in Resected Lung Mucinous Adenocarcinoma: Clinical and Pathological Features

Journal of thoracic oncology, 2018-10, Vol.13 (10), p.S702-S702

2018

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Dynamic Hall-Petch versus grain-size gradient effects on the mechanical behavior under simple shear loading of ß-titanium Ti-25Nb-25Zr alloys

Materials letters, 2017-11, Vol.206, p.214

2017

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Source resistance reduction of AlGaN-GaN HFETs with novel superlattice cap layer

IEEE transactions on electron devices, 2005-06, Vol.52 (6), p.1042-1047

2005

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IEEE_Xplore

Evaluation of local strain magnitude at initiation point of calcium signaling response to mechanical stimuli in osteoblastic cells

Journal of biomechanics, 2006, Vol.39, p.S239-S239

2006

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Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

Electron and hole-related luminescence processes in gate injection transistors

Data on processing of Ti-25Nb-25Zr β-titanium alloys via powder metallurgy route: Methodology, microstructure and mechanical properties

Extensive Analysis of the Degradation of Blu-Ray Laser Diodes

Polarization Control of Vertical-Cavity Surface-Emitting Lasers by Utilizing Surface Plasmon Resonance

Mechatronic design of a ball-on-plate balancing system

A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

Cyclic shear behavior of conventional and harmonic structure-designed Ti-25Nb-25Zr β-titanium alloy: Back-stress hardening and twinning inhibition

Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates

Degradation of InGaN-Based Laser Diodes Related to Nonradiative Recombination

Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

Analysis of the Role of Current, Temperature, and Optical Power in the Degradation of InGaN-Based Laser Diodes

Dynamic Hall-Petch versus grain-size gradient effects on the mechanical behavior under simple shear loading of β-titanium Ti-25Nb-25Zr alloys

Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems

Experimental and theoretical examination of orientation effect on piezoelectric charge at gate periphery in AlGaN/GaN HFETs

Degradation of InGaN-based laser diodes due to increased non-radiative recombination rate

A MOS Image Sensor With a Digital-Microlens

P2.01-97 Prognostic Factors in Resected Lung Mucinous Adenocarcinoma: Clinical and Pathological Features

Dynamic Hall-Petch versus grain-size gradient effects on the mechanical behavior under simple shear loading of ß-titanium Ti-25Nb-25Zr alloys

Source resistance reduction of AlGaN-GaN HFETs with novel superlattice cap layer

Evaluation of local strain magnitude at initiation point of calcium signaling response to mechanical stimuli in osteoblastic cells

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