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Measurement of heat transfer coefficients for steam condensation on a vertical 21.5-mm-O.D. tube in the presence of air

Journal of nuclear science and technology, 2020-08, Vol.57 (8), p.905-916

2020

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Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment

Applied physics letters, 2011-09, Vol.99 (10), p.102103-102103-3

2011

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Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films

Applied physics letters, 2013-06, Vol.102 (24)

2013

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Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor

Applied physics letters, 2013-10, Vol.103 (18)

2013

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The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application

Applied physics letters, 2012-04, Vol.100 (18)

2012

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Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

Applied physics letters, 2011-03, Vol.98 (10), p.103509-103509-3

2011

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Variation in the threshold voltage of amorphous-In2Ga2ZnO7 thin-film transistors by ultrathin Al2O3 passivation layer

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-11, Vol.31 (6)

2013

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Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing

IEEE electron device letters, 2013-07, Vol.34 (7), p.894-896

2013

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Indium tin oxide/InGaZnO bilayer stacks for enhanced mobility and optical stability in amorphous oxide thin film transistors

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3357-3363

2012

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Dynamics of negative bias thermal stress-induced threshold voltage shifts in indium zinc oxide transistors: impact of the crystalline structure on the activation energy barrier

Journal of physics. D, Applied physics, 2014-04, Vol.47 (16), p.1-6

2014

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Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process

Applied physics letters, 2012-05, Vol.100 (20)

2012

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Spectroscopic investigation of the hole states in Ni-deficient NiO films

Journal of materials chemistry. C, Materials for optical and electronic devices, 2013-01, Vol.1 (28), p.4334-4338

2013

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The impact of orbital hybridization on the electronic structure of crystalline InGaZnO: a new perspective on the compositional dependence

Journal of materials chemistry. C, Materials for optical and electronic devices, 2014-11, Vol.2 (43), p.9196-9204

2014

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The effects of device geometry on the negative bias temperature instability of Hf-In-Zn-O thin film transistors under light illumination

Applied physics letters, 2011-01, Vol.98 (2), p.023507-023507-3

2011

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Improvement in the negative bias illumination temperature stress instability of In-Ga-Zn-O thin film transistors using an Al2O3 buffer layer

Physica status solidi. PSS-RRL. Rapid research letters, 2011-06, Vol.5 (5-6), p.178-180

2011

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The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous- \hbox\hbox\hbox

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1128-1135

2013

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Resistive Switching in \hbox Thin Films Using the Semiconducting In-Ga-Zn-O Electrode

IEEE electron device letters, 2012-04, Vol.33 (4), p.582-584

2012

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The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-In2Ga2ZnO7

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1128-1135

2013

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Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In–Ga–Zn–O thin film transistors under light illumination

Applied physics letters, 2011-06, Vol.98 (23)

2011

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Resistive Switching in TiO2 Thin Films Using the Semiconducting In-Ga-Zn-O Electrode

IEEE electron device letters, 2012-04, Vol.33 (4), p.582-584

2012

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Improved Growth and Electrical Properties of Atomic-Layer-Deposited Metal-Oxide Film by Discrete Feeding Method of Metal Precursor

Chemistry of materials, 2011-04, Vol.23 (7), p.1654-1658

2011

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Optical modeling and experimental verification of light induced phenomena in In-Ga-Zn-O thin film transistors with varying gate insulator thickness

Journal of applied physics, 2012-01, Vol.111 (2), p.024511-024511-8

2012

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Correlation of the change in transfer characteristics with the interfacialtrap densities of amorphous In-Ga-Zn-O thin film transistors underlight illumination

Applied physics letters, 2011-06, Vol.98 (23), p.232102-232102-3

2011

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Study on the defects in metal–organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysis

Journal of materials chemistry. C, Materials for optical and electronic devices, 2013-01, Vol.1 (40), p.6695-6702

2013

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Measurement of heat transfer coefficients for steam condensation on a vertical 21.5-mm-O.D. tube in the presence of air

Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment

Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films

Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor

The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

Variation in the threshold voltage of amorphous-In2Ga2ZnO7 thin-film transistors by ultrathin Al2O3 passivation layer

Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing

Indium tin oxide/InGaZnO bilayer stacks for enhanced mobility and optical stability in amorphous oxide thin film transistors

Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs

Dynamics of negative bias thermal stress-induced threshold voltage shifts in indium zinc oxide transistors: impact of the crystalline structure on the activation energy barrier

Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process

Spectroscopic investigation of the hole states in Ni-deficient NiO films

The impact of orbital hybridization on the electronic structure of crystalline InGaZnO: a new perspective on the compositional dependence

The effects of device geometry on the negative bias temperature instability of Hf-In-Zn-O thin film transistors under light illumination

Improvement in the negative bias illumination temperature stress instability of In-Ga-Zn-O thin film transistors using an Al2O3 buffer layer

The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous- \hbox\hbox\hbox

Resistive Switching in \hbox Thin Films Using the Semiconducting In-Ga-Zn-O Electrode

The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-In2Ga2ZnO7

Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In–Ga–Zn–O thin film transistors under light illumination

Resistive Switching in TiO2 Thin Films Using the Semiconducting In-Ga-Zn-O Electrode

Improved Growth and Electrical Properties of Atomic-Layer-Deposited Metal-Oxide Film by Discrete Feeding Method of Metal Precursor

Optical modeling and experimental verification of light induced phenomena in In-Ga-Zn-O thin film transistors with varying gate insulator thickness

Correlation of the change in transfer characteristics with the interfacialtrap densities of amorphous In-Ga-Zn-O thin film transistors underlight illumination

Study on the defects in metal–organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysis

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