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Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3393-3399

2007

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Detector identification by waveform shape analysis for effective data acquisition: Improvements in time resolution and count rate for positron annihilation age–momentum correlation measurement

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2019-07, Vol.931, p.100-104

2019

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Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

Applied physics letters, 2011-08, Vol.99 (9), p.093506-093506-3

2011

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Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

IEEE electron device letters, 2008-10, Vol.29 (10), p.1087-1089

2008

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Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

Applied physics letters, 2010-12, Vol.97 (26), p.263501-263501-3

2010

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AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

IEEE transactions on electron devices, 2005-09, Vol.52 (9), p.1963-1968

2005

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Electron and hole-related luminescence processes in gate injection transistors

Applied physics letters, 2010-07, Vol.97 (3), p.033506-033506-3

2010

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Data on processing of Ti-25Nb-25Zr β-titanium alloys via powder metallurgy route: Methodology, microstructure and mechanical properties

Data in brief, 2018-04, Vol.17, p.703-708

2018

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Extensive Analysis of the Degradation of Blu-Ray Laser Diodes

IEEE electron device letters, 2008-06, Vol.29 (6), p.578-581

2008

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Polarization Control of Vertical-Cavity Surface-Emitting Lasers by Utilizing Surface Plasmon Resonance

IEEE journal of quantum electronics, 2007-12, Vol.43 (12), p.1123-1128

2007

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Mechatronic design of a ball-on-plate balancing system

Mechatronics (Oxford), 2002-03, Vol.12 (2), p.217-228

2002

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A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1893-1899

2005

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Cyclic shear behavior of conventional and harmonic structure-designed Ti-25Nb-25Zr β-titanium alloy: Back-stress hardening and twinning inhibition

Scripta materialia, 2017-09, Vol.138, p.44-47

2017

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Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates

IEEE journal of quantum electronics, 2008-10, Vol.44 (10), p.984-989

2008

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Degradation of InGaN-Based Laser Diodes Related to Nonradiative Recombination

IEEE electron device letters, 2009-04, Vol.30 (4), p.356-358

2009

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Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

IEEE electron device letters, 2012-03, Vol.33 (3), p.375-377

2012

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Analysis of the Role of Current, Temperature, and Optical Power in the Degradation of InGaN-Based Laser Diodes

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.222-228

2009

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Dynamic Hall-Petch versus grain-size gradient effects on the mechanical behavior under simple shear loading of β-titanium Ti-25Nb-25Zr alloys

Materials letters, 2017-11, Vol.206, p.214-216

2017

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Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1510-1514

2001

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Experimental and theoretical examination of orientation effect on piezoelectric charge at gate periphery in AlGaN/GaN HFETs

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1524-1529

2006

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Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1747-1751

2011

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Degradation of InGaN-based laser diodes due to increased non-radiative recombination rate

Physica status solidi. A, Applications and materials science, 2010-01, Vol.207 (1), p.41-44

2010

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P2.01-97 Prognostic Factors in Resected Lung Mucinous Adenocarcinoma: Clinical and Pathological Features

Journal of thoracic oncology, 2018-10, Vol.13 (10), p.S702-S702

2018

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A MOS Image Sensor With a Digital-Microlens

IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.986-991

2008

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Dynamic Hall-Petch versus grain-size gradient effects on the mechanical behavior under simple shear loading of ß-titanium Ti-25Nb-25Zr alloys

Materials letters, 2017-11, Vol.206, p.214

2017

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Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

Detector identification by waveform shape analysis for effective data acquisition: Improvements in time resolution and count rate for positron annihilation age–momentum correlation measurement

Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

Electron and hole-related luminescence processes in gate injection transistors

Data on processing of Ti-25Nb-25Zr β-titanium alloys via powder metallurgy route: Methodology, microstructure and mechanical properties

Extensive Analysis of the Degradation of Blu-Ray Laser Diodes

Polarization Control of Vertical-Cavity Surface-Emitting Lasers by Utilizing Surface Plasmon Resonance

Mechatronic design of a ball-on-plate balancing system

A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

Cyclic shear behavior of conventional and harmonic structure-designed Ti-25Nb-25Zr β-titanium alloy: Back-stress hardening and twinning inhibition

Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates

Degradation of InGaN-Based Laser Diodes Related to Nonradiative Recombination

Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

Analysis of the Role of Current, Temperature, and Optical Power in the Degradation of InGaN-Based Laser Diodes

Dynamic Hall-Petch versus grain-size gradient effects on the mechanical behavior under simple shear loading of β-titanium Ti-25Nb-25Zr alloys

Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems

Experimental and theoretical examination of orientation effect on piezoelectric charge at gate periphery in AlGaN/GaN HFETs

Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency

Degradation of InGaN-based laser diodes due to increased non-radiative recombination rate

P2.01-97 Prognostic Factors in Resected Lung Mucinous Adenocarcinoma: Clinical and Pathological Features

A MOS Image Sensor With a Digital-Microlens

Dynamic Hall-Petch versus grain-size gradient effects on the mechanical behavior under simple shear loading of ß-titanium Ti-25Nb-25Zr alloys

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