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Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Micromachines (Basel), 2021-09, Vol.12 (10), p.1159

2021

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The Evolution of Manufacturing Technology for GaN Electronic Devices

Micromachines (Basel), 2021-06, Vol.12 (7), p.737

2021

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Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1505-1510

2017

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AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Nanoscale research letters, 2017-04, Vol.12 (1), p.315-315, Article 315

2017

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Full-color monolithic hybrid quantum dot nanoring micro light-emitting diodes with improved efficiency using atomic layer deposition and nonradiative resonant energy transfer

Photonics research (Washington, DC), 2019-04, Vol.7 (4), p.416

2019

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Dependence of Photoresponsivity and On/Off Ratio on Quantum Dot Density in Quantum Dot Sensitized MoS2 Photodetector

Nanomaterials (Basel, Switzerland), 2020-09, Vol.10 (9), p.1828

2020

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High-Efficiency InGaN/GaN Core–Shell Nanorod Light-Emitting Diodes With Low-Peak Blueshift and Efficiency Droop

IEEE transactions on nanotechnology, 2017-03, Vol.16 (2), p.355-358

2017

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Structural and optical properties of low temperature grown AlN films on sapphire using helicon sputtering system

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2015-05, Vol.33 (3)

2015

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An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

Electronics (Basel), 2016-06, Vol.5 (4), p.28

2016

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Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

Scientific reports, 2016-01, Vol.6 (1), p.19757-19757, Article 19757

2016

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Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography

Scientific reports, 2017-03, Vol.7 (1), p.42962-42962, Article 42962

2017

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High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer

Optics express, 2016-05, Vol.24 (11), p.11387-11395

2016

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Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

Nanomaterials (Basel, Switzerland), 2017-04, Vol.7 (4), p.78

2017

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Non-thermal alloyed ohmic contact process of GaN-based HEMTs by pulsed laser annealing

Semiconductor science and technology, 2016-05, Vol.31 (5), p.55003

2016

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Substrate Bias Effect on Dynamic Characteristics of a Monolithically Integrated GaN Half-Bridge

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-5

2020

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Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

Nanoscale research letters, 2014-09, Vol.9 (1), p.505-505, Article 505

2014

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Growth evolution and magneto-optical characteristics of self-assembled ZnTe/ZnMnSe quantum dots

Journal of crystal growth, 2013-09, Vol.378, p.222-225

2013

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Optical and Magnetic Properties of Zn1-xMnxO Grown by Plasma-Assisted Molecular Beam Epitaxy

IEEE transactions on magnetics, 2014-06, Vol.50 (6)

2014

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Optical and Magnetic Properties of Grown by Plasma-Assisted Molecular Beam Epitaxy

IEEE transactions on magnetics, 2014-06, Vol.50 (6), p.1-4

2014

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Efficiency droop behavior improvement through barrier thickness modification for GaN-on-silicon light-emitting diodes

Journal of photonics for energy, 2015-03, Vol.5 (1), p.57604

2015

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Deep UV Metal-Semiconductor-Metal Photodetectors Using Low-Temperature-Grown AlN Epilayer on Sapphires

Sensor letters, 2013-09, Vol.11 (9), p.1606-1610

2013

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Wavelength tuning in InGaN/GaN light-emitting diodes with strain-induced through nanosphere lithography

2017 Conference on Lasers and Electro-Optics (CLEO), 2017, p.1-2

2017

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Greatly improved efficiency droop for InGaN-based green light emitting diodes by quaternary content superlattice electron blocking layer

2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2015, p.15-16

2015

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Greatly improved carrier injection in GaN-based VCSEL by multiple quantum barrier electron blocking layer

2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2015, p.139-140

2015

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Novel Hybrid Micro Light-Emitting Diodes with Increasing Color-Conversion Technical by Non-Radiative Energy Transfer

2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2018, p.1-2

2018

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Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

The Evolution of Manufacturing Technology for GaN Electronic Devices

Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Full-color monolithic hybrid quantum dot nanoring micro light-emitting diodes with improved efficiency using atomic layer deposition and nonradiative resonant energy transfer

Dependence of Photoresponsivity and On/Off Ratio on Quantum Dot Density in Quantum Dot Sensitized MoS2 Photodetector

High-Efficiency InGaN/GaN Core–Shell Nanorod Light-Emitting Diodes With Low-Peak Blueshift and Efficiency Droop

Structural and optical properties of low temperature grown AlN films on sapphire using helicon sputtering system

An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography

High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

Non-thermal alloyed ohmic contact process of GaN-based HEMTs by pulsed laser annealing

Substrate Bias Effect on Dynamic Characteristics of a Monolithically Integrated GaN Half-Bridge

Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

Growth evolution and magneto-optical characteristics of self-assembled ZnTe/ZnMnSe quantum dots

Optical and Magnetic Properties of Zn1-xMnxO Grown by Plasma-Assisted Molecular Beam Epitaxy

Optical and Magnetic Properties of Grown by Plasma-Assisted Molecular Beam Epitaxy

Efficiency droop behavior improvement through barrier thickness modification for GaN-on-silicon light-emitting diodes

Deep UV Metal-Semiconductor-Metal Photodetectors Using Low-Temperature-Grown AlN Epilayer on Sapphires

Wavelength tuning in InGaN/GaN light-emitting diodes with strain-induced through nanosphere lithography

Greatly improved efficiency droop for InGaN-based green light emitting diodes by quaternary content superlattice electron blocking layer

Greatly improved carrier injection in GaN-based VCSEL by multiple quantum barrier electron blocking layer

Novel Hybrid Micro Light-Emitting Diodes with Increasing Color-Conversion Technical by Non-Radiative Energy Transfer

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