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A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.88-99

2019

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Atomic ordering effect on SiGe electronic structure

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2014, p.69-72

2014

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Impact of SMT-induced edge dislocation positions to NFET performance

2015 73rd Annual Device Research Conference (DRC), 2015, p.184-184

2015

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The characteristic of strain relaxation on SiGe virtual substrate with thermal annealing

Applied physics letters, 2007-10, Vol.91 (14)

2007

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Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-μm SiGe BiCMOS process

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1683-1689

2003

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Quantum confinement point of view for mobility and stress responses on (100) and (110) SingleGate and double-gate nMOSFETs

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, p.192-195

2013

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Observation of in-plane strain fluctuation in relaxed SiGe virtual substrate

Thin solid films, 2008-11, Vol.517 (1), p.281-284

2008

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Molecular Dynamic simulation study of stress memorization in Si dislocations

2012 International Electron Devices Meeting, 2012, p.30.1.1-30.1.4

2012

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Modeling challenges of advanced doping technologies

2012 12th International Workshop on Junction Technology, 2012, p.150-155

2012

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The characteristic of strain relaxation on SiGe virtual substratewith thermal annealing

Applied physics letters, 2007-10, Vol.91 (14), p.142102-142102-3

2007

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Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-[mu]m SiGe BiCMOS process

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1683

2003

Volltextzugriff (PDF)

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-mum SiGe BiCMOS process

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1683-1689

2003

Volltextzugriff (PDF)

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1683-1689

2003

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Ab initio study of dipole-induced threshold voltage shift in HfO2/Al2O3/(100)Si

2014 International Workshop on Computational Electronics (IWCE), 2014, p.1-3

2014

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Studies of osteoblast-like MG-63 cellular proliferation and differentiation with cyclic stretching cell culture system on biomimetic hydrophilic layers modified polydimethylsiloxane substrate

Biochemical engineering journal, 2021-04, Vol.168, p.107946, Article 107946

2021

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Surface modification of titanium substrate with a novel covalently-bound copolymer thin film for improving its platelet compatibility

Journal of materials science. Materials in medicine, 2015-02, Vol.26 (2), p.79-13, Article 79

2015

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A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study

Atomic ordering effect on SiGe electronic structure

Impact of SMT-induced edge dislocation positions to NFET performance

The characteristic of strain relaxation on SiGe virtual substrate with thermal annealing

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-μm SiGe BiCMOS process

Quantum confinement point of view for mobility and stress responses on (100) and (110) SingleGate and double-gate nMOSFETs

Observation of in-plane strain fluctuation in relaxed SiGe virtual substrate

Molecular Dynamic simulation study of stress memorization in Si dislocations

Modeling challenges of advanced doping technologies

The characteristic of strain relaxation on SiGe virtual substratewith thermal annealing

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-[mu]m SiGe BiCMOS process

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-mum SiGe BiCMOS process

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

Ab initio study of dipole-induced threshold voltage shift in HfO2/Al2O3/(100)Si

Studies of osteoblast-like MG-63 cellular proliferation and differentiation with cyclic stretching cell culture system on biomimetic hydrophilic layers modified polydimethylsiloxane substrate

Surface modification of titanium substrate with a novel covalently-bound copolymer thin film for improving its platelet compatibility

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