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Longitudinal outcomes of trismus release with free-flap reconstruction in primary and secondary oral submucous fibrosis-related trismus

Journal of plastic, reconstructive & aesthetic surgery, 2024-05, Vol.92, p.26-32

2024

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Lie symmetry analysis of the effects of urban infrastructures on residential property values

PloS one, 2021-08, Vol.16 (8), p.e0255233-e0255233

2021

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Intensive measures of luminescence in GaN/InGaN heterostructures

PloS one, 2019-09, Vol.14 (9), p.e0222928-e0222928

2019

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Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes

Nanomaterials (Basel, Switzerland), 2021-05, Vol.11 (6), p.1449

2021

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Lie Group Analysis of the Photo-Induced Fluorescence of Drosophila Oogenesis with the Asymmetrically Localized Gurken Protein

PloS one, 2013-06, Vol.8 (6), p.e65143

2013

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Characterization of Nanocrystallites of InGaN/GaN Multiquantum Wells by High-Resolution X-ray Diffraction

IEEE transactions on nanotechnology, 2011-07, Vol.10 (4), p.827-831

2011

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The Improvement of Bonding Metal Layers in a GaAs Vertical Structure Light-Emitting Diode Package

Journal of electronic materials, 2020-11, Vol.49 (11), p.6859-6864

2020

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Continuous Symmetry Analysis of the Effects of City Infrastructures on Invariant Metrics for House Market Volatilities

Computer modeling in engineering & sciences, 2022, Vol.133 (3), p.619-638

2022

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Investigation of the thermal photocarrier interaction–recombination in ZnO nanostructures fabricated by the hydrothermal method

Journal of luminescence, 2017-10, Vol.190, p.136-140

2017

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Carrier dynamics study of the temperature- and excitation-dependent photoluminescence of InAs ∕ GaAs quantum dots

Journal of applied physics, 2006-01, Vol.99 (1), p.013506-013506-7

2006

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Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems

Journal of crystal growth, 2006-01, Vol.287 (2), p.468-471

2006

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Strain modulated defect luminescence in ZnO nanostructures grown on Si substrates

Journal of luminescence, 2015-12, Vol.168, p.304-308

2015

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Characterization of InGaN/GaN light-emitting diodes with micro-hole arrayed indium-tin-oxide layer

Thin solid films, 2011-07, Vol.519 (18), p.6069-6072

2011

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Subcell Debye behavior analysis of order–disorder effects in triple-junction InGaP-based photovoltaic solar cells

Journal of luminescence, 2015-12, Vol.168, p.309-314

2015

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Temperature and Excitation Dependence of Photoluminescence Spectra of InAs/GaAs Quantum Dot Heterostructures

IEEE transactions on nanotechnology, 2007-09, Vol.6 (5), p.492-496

2007

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Characterization of high quality ZnO nanowire surface plasmon resonance sensors on Si substrate with perforated aluminum cylindrical micropillar arrays

2010 IEEE Sensors, 2010, p.521-524

2010

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The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes

Journal of luminescence, 2012-02, Vol.132 (2), p.429-433

2012

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Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes with Electron Tunneling Layer

Japanese Journal of Applied Physics, 2008-09, Vol.47 (9R), p.7148

2008

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Temperature and current dependences of electroluminescence from InGaN/GaN multiple quantum wells

Journal of crystal growth, 2008-11, Vol.310 (23), p.5143-5146

2008

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Characterization of the anomalous luminescence properties from self-ordered porous anodic alumina with oxalic acid electrolytes

Thin solid films, 2009-12, Vol.518 (5), p.1439-1442

2009

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Enhancement of exciton radiative recombination for In-doped ZnO nanowires with aluminum cylindrical micropillars

Journal of luminescence, 2013-04, Vol.136, p.11-16

2013

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Anomalous luminescence phenomena of indium-doped ZnO nanostructures grown on Si substrates by the hydrothermal method

Nanoscale research letters, 2012-05, Vol.7 (1), p.270-270, Article 270

2012

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Anomalous Optical Characteristics of Carrier Transfer Process in Quaternary AlInGaN Multiple Quantum Well Heterostructure

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2558

2007

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Influences of Multiquantum Barriers on Carrier Recombination in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2413

2007

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Improvements of quantum efficiency and thermal stability by using Si delta doping in blue InGaN/GaN multiple quantum well light-emitting diodes

Physica status solidi. C, 2007-06, Vol.4 (7), p.2797-2801

2007

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Longitudinal outcomes of trismus release with free-flap reconstruction in primary and secondary oral submucous fibrosis-related trismus

Lie symmetry analysis of the effects of urban infrastructures on residential property values

Intensive measures of luminescence in GaN/InGaN heterostructures

Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes

Lie Group Analysis of the Photo-Induced Fluorescence of Drosophila Oogenesis with the Asymmetrically Localized Gurken Protein

Characterization of Nanocrystallites of InGaN/GaN Multiquantum Wells by High-Resolution X-ray Diffraction

The Improvement of Bonding Metal Layers in a GaAs Vertical Structure Light-Emitting Diode Package

Continuous Symmetry Analysis of the Effects of City Infrastructures on Invariant Metrics for House Market Volatilities

Investigation of the thermal photocarrier interaction–recombination in ZnO nanostructures fabricated by the hydrothermal method

Carrier dynamics study of the temperature- and excitation-dependent photoluminescence of InAs ∕ GaAs quantum dots

Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems

Strain modulated defect luminescence in ZnO nanostructures grown on Si substrates

Characterization of InGaN/GaN light-emitting diodes with micro-hole arrayed indium-tin-oxide layer

Subcell Debye behavior analysis of order–disorder effects in triple-junction InGaP-based photovoltaic solar cells

Temperature and Excitation Dependence of Photoluminescence Spectra of InAs/GaAs Quantum Dot Heterostructures

Characterization of high quality ZnO nanowire surface plasmon resonance sensors on Si substrate with perforated aluminum cylindrical micropillar arrays

The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes

Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes with Electron Tunneling Layer

Temperature and current dependences of electroluminescence from InGaN/GaN multiple quantum wells

Characterization of the anomalous luminescence properties from self-ordered porous anodic alumina with oxalic acid electrolytes

Enhancement of exciton radiative recombination for In-doped ZnO nanowires with aluminum cylindrical micropillars

Anomalous luminescence phenomena of indium-doped ZnO nanostructures grown on Si substrates by the hydrothermal method

Anomalous Optical Characteristics of Carrier Transfer Process in Quaternary AlInGaN Multiple Quantum Well Heterostructure

Influences of Multiquantum Barriers on Carrier Recombination in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Improvements of quantum efficiency and thermal stability by using Si delta doping in blue InGaN/GaN multiple quantum well light-emitting diodes

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