UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

IEEE electron device letters, 2010-01, Vol.31 (1), p.44-46

2010

Volltextzugriff (PDF)

Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications

Semiconductor science and technology, 2007-08, Vol.22 (8), p.884-889

2007

Volltextzugriff (PDF)

Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

IEEE electron device letters, 2008-03, Vol.29 (3), p.265-268

2008

Volltextzugriff (PDF)

Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-4

2020

Volltextzugriff (PDF)

Understanding Myeloma-Related Information Needs and Communication Preferences Within Black American Communities: An Exploratory Study

Journal of cancer education, 2024-08

2024

Volltextzugriff (PDF)

Ruthenium oxide metal nanocrystal capacitors with high- κ dielectric tunneling barriers for nanoscale nonvolatile memory device applications

Microelectronic engineering, 2010-10, Vol.87 (10), p.1821-1827

2010

Volltextzugriff (PDF)

Patient Perceptions of Switching to a Generic Dry Powder Inhaler – Increased Understanding Through Journey Mapping

International journal of chronic obstructive pulmonary disease, 2022-01, Vol.17, p.1751-1768

2022

Volltextzugriff (PDF)

Patient Perceptions of Switching to a Generic Dry Powder Inhaler – Increased Understanding Through Journey Mapping [Corrigendum]

International journal of chronic obstructive pulmonary disease, 2022-09, Vol.17, p.2381-2382

2022

Volltextzugriff (PDF)

Charge storage characteristics of atomic layer deposited RuOx nanocrystals

Applied physics letters, 2007-06, Vol.90 (25)

2007

Volltextzugriff (PDF)

Feasibility Study of a 3D IC Integration System-in-Packaging (SiP) from a 300 mm Multi-Project Wafer (MPW)

Journal of microelectronics and electronic packaging, 2011-10, Vol.8 (4), p.171-178

2011

Volltextzugriff (PDF)

Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers

Applied physics letters, 2007-06, Vol.90 (26)

2007

Volltextzugriff (PDF)

RESET Mechanism of TiOx Resistance-Change Memory Device

IEEE electron device letters, 2009-07, Vol.30 (7), p.733-735

2009

Volltextzugriff (PDF)

Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors

Applied physics letters, 2007-07, Vol.91 (4), p.043114-043114-3

2007

Volltextzugriff (PDF)

Suppression of Plasma Charging Damage in Sub-Micron Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with Gate Oxynitride by Two-Step Nitridation

Japanese Journal of Applied Physics, 2001-06, Vol.40 (6A), p.L536-L538

2001

Volltextzugriff (PDF)

Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material

IEEE electron device letters, 2001-11, Vol.22 (11), p.527-529

2001

Volltextzugriff (PDF)

Microstructural Evolution of Metal–Insulator–Metal Capacitor Prepared by Atomic-Layer-Deposition System at Elevated Temperature

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3036

2006

Volltextzugriff (PDF)

Memory Characteristics of Atomic-Layer-Deposited High-κ HfAlO Nanocrystal Capacitors

Electrochemical and solid-state letters, 2008, Vol.11 (4), p.K50

2008

Volltextzugriff (PDF)

Charge-Trapping-Type Flash Memory Device With Stacked High- k Charge-Trapping Layer

IEEE electron device letters, 2009-07, Vol.30 (7), p.775-777

2009

Volltextzugriff (PDF)

Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure

2009 International Symposium on VLSI Technology, Systems, and Applications, 2009, p.33-34

2009

Volltextzugriff (PDF)

Highly Thermally Stable and Reproducible of ALD RuO2 Nanocrystal Floating Gate Memory Devices with Large Memory Window and Good Retention

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2008, p.50-51

2008

Volltextzugriff (PDF)

Crucial integration of high work-function metal gate and high- k blocking oxide on charge-trapping type flash memory device

Applied physics letters, 2008-12, Vol.93 (25), p.252902-252902-3

2008

Volltextzugriff (PDF)

Ruthenium oxide metal nanocrystal capacitors with high-[kappa] dielectric tunneling barriers for nanoscale nonvolatile memory device applications

Microelectronic engineering, 2010-10, Vol.87 (10), p.1821-1827

2010

Volltextzugriff (PDF)

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

Volltextzugriff (PDF)

Charge storage characteristics of atomic layer deposited Ru O x nanocrystals

Applied physics letters, 2007-06, Vol.90 (25), p.253108-253108-3

2007

Volltextzugriff (PDF)

RUTHENIUM OXIDE METAL NANOCRYSTAL CAPACITORS WITH HIGH-k DIELECTRIC TUNNELLING BARRIERS FOR NANOSCALE NONVOLATILE MEMORY DEVICE APPLICATIONS

Microelectronic engineering, 2010-01, Vol.87 (10), p.1821-1827

2010

Volltextzugriff (PDF)

1 – 25 von 612

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(473)
Mit Volltextzugriff
(482)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(428)
Life Sciences & Biomedicine
(274)
Humans
(255)
Female
(175)
Male
(166)
Adult
(139)
Technology
(127)
Biological And Medical Sciences
(105)
Middle Aged
(105)
Medical Sciences
(86)
Engineering
(83)
Aged
(80)
Physical Sciences
(78)
Physics
(59)
Oncology
(57)
Animals
(56)
Engineering, Electrical & Electronic
(55)
Exact Sciences And Technology
(54)
Adolescent
(47)
Retrospective Studies
(43)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications

Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

Understanding Myeloma-Related Information Needs and Communication Preferences Within Black American Communities: An Exploratory Study

Ruthenium oxide metal nanocrystal capacitors with high- κ dielectric tunneling barriers for nanoscale nonvolatile memory device applications

Patient Perceptions of Switching to a Generic Dry Powder Inhaler – Increased Understanding Through Journey Mapping

Patient Perceptions of Switching to a Generic Dry Powder Inhaler – Increased Understanding Through Journey Mapping [Corrigendum]

Charge storage characteristics of atomic layer deposited RuOx nanocrystals

Feasibility Study of a 3D IC Integration System-in-Packaging (SiP) from a 300 mm Multi-Project Wafer (MPW)

Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2∕TiO2 multilayers

RESET Mechanism of TiOx Resistance-Change Memory Device

Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors

Suppression of Plasma Charging Damage in Sub-Micron Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with Gate Oxynitride by Two-Step Nitridation

Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material

Microstructural Evolution of Metal–Insulator–Metal Capacitor Prepared by Atomic-Layer-Deposition System at Elevated Temperature

Memory Characteristics of Atomic-Layer-Deposited High-κ HfAlO Nanocrystal Capacitors

Charge-Trapping-Type Flash Memory Device With Stacked High- k Charge-Trapping Layer

Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure

Highly Thermally Stable and Reproducible of ALD RuO2 Nanocrystal Floating Gate Memory Devices with Large Memory Window and Good Retention

Crucial integration of high work-function metal gate and high- k blocking oxide on charge-trapping type flash memory device

Ruthenium oxide metal nanocrystal capacitors with high-[kappa] dielectric tunneling barriers for nanoscale nonvolatile memory device applications

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

Charge storage characteristics of atomic layer deposited Ru O x nanocrystals

RUTHENIUM OXIDE METAL NANOCRYSTAL CAPACITORS WITH HIGH-k DIELECTRIC TUNNELLING BARRIERS FOR NANOSCALE NONVOLATILE MEMORY DEVICE APPLICATIONS

Suchergebnisse filtern