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Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

Nature communications, 2013-08, Vol.4 (1), p.2294-2294, Article 2294

2013

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Challenges for silicon technology scaling in the Nanoscale Era

2009 Proceedings of ESSCIRC, 2009, p.1-7

Tze-chiang Chen

2009

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Characterization of the ultrathin HfO2 and Hf-silicate films grown by atomic layer deposition

IEEE transactions on electron devices, 2007-04, Vol.54 (4), p.759-766

2007

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Efficiency enhancement of a-Si:H single junction solar cells by a-Ge:H incorporation at the p + a-SiC:H/transparent conducting oxide interface

Applied physics letters, 2011-08, Vol.99 (6), p.062102-062102-3

2011

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Nanoscale chemical templating of Si nanowires seeded with Al

Nanotechnology, 2013-06, Vol.24 (23), p.235301-235301

2013

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Device technology innovation for exascale computing

2009 Symposium on VLSI Technology, 2009, p.8-11

Tze-chiang Chen

2009

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Mechanism of Threshold Voltage Shift (Δ V th ) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 4B), p.2423-2425

2002

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Challenges for silicon technology scaling in the nanoscale era

2009 Proceedings of the European Solid State Device Research Conference, 2009, p.1-7

Tze-chiang Chen

2009

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Characterization of the Ultrathin \hbox and Hf-Silicate Films Grown by Atomic Layer Deposition

IEEE transactions on electron devices, 2007-04, Vol.54 (4), p.759-766

2007

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Overcoming research challenges for CMOS scaling: industry directions

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006, p.4-7

Tze-Chiang Chen

2006

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On the Temperature Dependence of Majority Carrier Transport in Heavily Arsenic‐Doped Polycrystalline Silicon Thin Films

Journal of the Electrochemical Society, 1989-03, Vol.136 (3), p.794-804

1989

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A 23-ps/2.1-mW ECL gate with an AC-coupled active pull-down emitter-follower stage

IEEE journal of solid-state circuits, 1989-10, Vol.24 (5), p.1301-1306

1989

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Innovation in solid state devices for exascale computing

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010, p.2-5

Tze-chiang Chen

2010

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On the narrow-emitter effect of advanced shallow-profile bipolar transistors

IEEE transactions on electron devices, 1988-11, Vol.35 (11), p.1942-1950

1988

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Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistors

IEEE transactions on electron devices, 1989-06, Vol.36 (6), p.1182-1188

1989

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Message

IBM journal of research and development, 2008-05, Vol.52 (3), p.222-222

Chen, Tze-Chiang

2008

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Modeling of currents in a vertical p-n-p transistor with extremely shallow emitter

IEEE electron device letters, 1989-05, Vol.10 (5), p.232-235

1989

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Design considerations of high-performance narrow-emitter bipolar transistors

IEEE electron device letters, 1987-04, Vol.8 (4), p.174-175

1987

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Sub-300-ps CBL circuits

IEEE electron device letters, 1989-11, Vol.10 (11), p.484-486

1989

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Message

IBM journal of research and development, 2006-07, Vol.50 (4.5), p.336-336

Chen, Tze-Chiang

2006

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An advanced bipolar transistor with self-aligned ion-implanted base and W/poly emitter

IEEE transactions on electron devices, 1988, Vol.35 (8), p.1322-1327

1988

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Bipolar transistor with self-aligned lateral profile

IEEE electron device letters, 1987-08, Vol.8 (8), p.338-340

1987

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On the very-high-current degradations on Si n-p-n transistors

IEEE transactions on electron devices, 1990-07, Vol.37 (7), p.1698-1706

1990

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Identification and implication of a perimeter tunneling current component in advanced self-aligned bipolar transistors

IEEE transactions on electron devices, 1988-01, Vol.35 (1), p.89-95

1988

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.39.2.1-39.2.4

2001

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Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

Challenges for silicon technology scaling in the Nanoscale Era

Characterization of the ultrathin HfO2 and Hf-silicate films grown by atomic layer deposition

Efficiency enhancement of a-Si:H single junction solar cells by a-Ge:H incorporation at the p + a-SiC:H/transparent conducting oxide interface

Nanoscale chemical templating of Si nanowires seeded with Al

Device technology innovation for exascale computing

Mechanism of Threshold Voltage Shift (Δ V th ) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs

Challenges for silicon technology scaling in the nanoscale era

Characterization of the Ultrathin \hbox and Hf-Silicate Films Grown by Atomic Layer Deposition

Overcoming research challenges for CMOS scaling: industry directions

On the Temperature Dependence of Majority Carrier Transport in Heavily Arsenic‐Doped Polycrystalline Silicon Thin Films

A 23-ps/2.1-mW ECL gate with an AC-coupled active pull-down emitter-follower stage

Innovation in solid state devices for exascale computing

On the narrow-emitter effect of advanced shallow-profile bipolar transistors

Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistors

Message

Modeling of currents in a vertical p-n-p transistor with extremely shallow emitter

Design considerations of high-performance narrow-emitter bipolar transistors

Sub-300-ps CBL circuits

Message

An advanced bipolar transistor with self-aligned ion-implanted base and W/poly emitter

Bipolar transistor with self-aligned lateral profile

On the very-high-current degradations on Si n-p-n transistors

Identification and implication of a perimeter tunneling current component in advanced self-aligned bipolar transistors

Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

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