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Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing

Semiconductors (Woodbury, N.Y.), 2022-03, Vol.56 (3), p.223-229

2022

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Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films

Semiconductors (Woodbury, N.Y.), 2019-04, Vol.53 (4), p.493-498

2019

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Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase

Semiconductors (Woodbury, N.Y.), 2022-03, Vol.56 (3), p.215-222

2022

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Anodic Oxidation of Hydrogen-Transferred Silicon-on-Insulator Layers

Semiconductors (Woodbury, N.Y.), 2019-02, Vol.53 (2), p.241-245

2019

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Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices

Semiconductors (Woodbury, N.Y.), 2021, Vol.55 (1), p.76-85

2021

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Robust semiconductor-on-ferroelectric structures with hafnia–zirconia–alumina UTBOX stacks compatible with CMOS technology

Journal of physics. D, Applied physics, 2021-06, Vol.54 (22), p.225101

2021

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Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions

Semiconductors (Woodbury, N.Y.), 2021-03, Vol.55 (3), p.289-295

2021

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Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers

Applied physics letters, 1997-11, Vol.71 (19), p.2809-2811

1997

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Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining

Semiconductors (Woodbury, N.Y.), 2019-01, Vol.53 (1), p.60-64

2019

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Diffusion and Interaction of In and As Implanted into SiO2 Films

Semiconductors (Woodbury, N.Y.), 2019-08, Vol.53 (8), p.1004-1010

2019

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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1364-1369

2017

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Ion-Beam Synthesis of the Crystalline Ge Phase in SiO x N y Films upon Annealing under High Pressure

Semiconductors (Woodbury, N.Y.), 2018-02, Vol.52 (2), p.268-272

2018

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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1240-1246

2017

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Radiative recombination in silicon-on-insulator layers implanted with high dose of H+ ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-07, Vol.282, p.73-75

2012

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Room-temperature, short-wavelength (400–500 nm) photoluminescence from silicon-implanted silicon dioxide films

Applied physics letters, 1996-04, Vol.68 (17), p.2410-2412

1996

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Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO.sub.2 Matrices

Semiconductors (Woodbury, N.Y.), 2021-02, Vol.55 (1), p.76

2021

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Properties of silicon oversaturated with implanted hydrogen

Thin solid films, 2002-02, Vol.403, p.500-504

2002

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Radiation Hardened Silicon-on-Insulator Structures with N(+) Ion Modified Buried SiO(2) Layer

AIP conference proceedings, 2009-12, Vol.1194 (1), p.84-89

2009

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An origin of orange (2 eV) photoluminescence in SiO2 films implanted with high Si+-ion doses

Semiconductors (Woodbury, N.Y.), 2015-09, Vol.49 (9), p.1176-1180

Tyschenko, I. E.

2015

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An origin of orange (2 eV) photoluminescence in SiO{sub 2} films implanted with high Si{sup +}-ion doses

Semiconductors (Woodbury, N.Y.), 2015-09, Vol.49 (9)

Tyschenko, I. E.

2015

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Diffusion of In Atoms in SiO.sub.2 Films Implanted with As.sup.+ Ions

Semiconductors (Woodbury, N.Y.), 2021-03, Vol.55 (3), p.289

2021

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Visible Photoluminescence of SiO Films Implanted with In and As Ions

Optoelectronics, instrumentation, and data processing, 2024-02, Vol.60 (1), p.93-98

2024

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Diffusion of Germanium from a Buried SiO.sub.2 Layer and Formation of a SiGe Phase

Semiconductors (Woodbury, N.Y.), 2022-03, Vol.56 (3), p.215

2022

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Diffusion-Controlled growth of Ge nanocrystals in SiO{sub 2} films under conditions of ion synthesis at high pressure

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10)

2017

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Hafnia and alumina stacks as UTBOXs in silicon-on insulator

Solid-state electronics, 2020-06, Vol.168, p.107734, Article 107734

2020

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Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing

Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films

Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase

Anodic Oxidation of Hydrogen-Transferred Silicon-on-Insulator Layers

Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices

Robust semiconductor-on-ferroelectric structures with hafnia–zirconia–alumina UTBOX stacks compatible with CMOS technology

Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions

Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers

Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining

Diffusion and Interaction of In and As Implanted into SiO2 Films

Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Ion-Beam Synthesis of the Crystalline Ge Phase in SiO x N y Films upon Annealing under High Pressure

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Radiative recombination in silicon-on-insulator layers implanted with high dose of H+ ions

Room-temperature, short-wavelength (400–500 nm) photoluminescence from silicon-implanted silicon dioxide films

Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO.sub.2 Matrices

Properties of silicon oversaturated with implanted hydrogen

Radiation Hardened Silicon-on-Insulator Structures with N(+) Ion Modified Buried SiO(2) Layer

An origin of orange (2 eV) photoluminescence in SiO2 films implanted with high Si+-ion doses

An origin of orange (2 eV) photoluminescence in SiO{sub 2} films implanted with high Si{sup +}-ion doses

Diffusion of In Atoms in SiO.sub.2 Films Implanted with As.sup.+ Ions

Visible Photoluminescence of SiO Films Implanted with In and As Ions

Diffusion of Germanium from a Buried SiO.sub.2 Layer and Formation of a SiGe Phase

Diffusion-Controlled growth of Ge nanocrystals in SiO{sub 2} films under conditions of ion synthesis at high pressure

Hafnia and alumina stacks as UTBOXs in silicon-on insulator

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