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Trapping of Hot Carriers in the Forksheet FET Wall: A TCAD Study

IEEE electron device letters, 2023-02, Vol.44 (2), p.197-200

2023

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IEEE_Xplore

Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

Journal of physics. Condensed matter, 2005-12, Vol.17 (50), p.8057-8068

2005

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Analysis of the Features of Hot-Carrier Degradation in FinFETs

Semiconductors (Woodbury, N.Y.), 2018-10, Vol.52 (10), p.1298-1302

2018

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Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1738-1742

2018

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Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-01, Vol.35 (1)

2017

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Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures

Semiconductors (Woodbury, N.Y.), 2018-02, Vol.52 (2), p.242-247

2018

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Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1427-1432

2015

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Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1267-1272

2010

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Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric

Journal of computational electronics, 2014-09, Vol.13 (3), p.733-738

2014

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On the temperature behavior of hot-carrier degradation

2015 IEEE International Integrated Reliability Workshop (IIRW), 2015, p.143-146

2015

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IEEE_Xplore

Determination of correlation length for thickness fluctuations in thin oxide and fluoride films

Journal of physics. D, Applied physics, 2009-06, Vol.42 (11), p.115307-115307 (6)

2009

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An analytical approach for physical modeling of hot-carrier induced degradation

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1525-1529

2011

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Transient-current measurement of the trap charge density at interfaces of a thin-film metal∕ferroelectric∕metal structure

Applied physics letters, 2005-11, Vol.87 (19), p.192101-192101-3

2005

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Electrical methods for estimating the correlation length of insulator thickness fluctuations in MIS tunnel structures

Materials science in semiconductor processing, 2010-12, Vol.13 (5), p.405-410

2010

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Physical modeling of hot-carrier degradation in nLDMOS transistors

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), 2014, p.58-62

2014

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IEEE_Xplore

Dominant mechanisms of hot-carrier degradation in short- and long-channel transistors

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), 2014, p.63-68

2014

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IEEE_Xplore

Determination of the characteristic length of thickness fluctuations for a tunneling-thin insulator in MIS structures from electrical data

Semiconductors (Woodbury, N.Y.), 2007-10, Vol.41 (10), p.1181-1184

2007

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The impact of self-heating and its implications on hot-carrier degradation – A modeling study

Microelectronics and reliability, 2021-07, Vol.122, p.114156, Article 114156

2021

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An aluminum-gate metal-oxide-silicon capacitor with a tunnel-thin oxide under the bidirectional electric stress

Journal of applied physics, 2005-07, Vol.98 (2), p.024501-024501-5

2005

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Effect of the spatial distribution of SiO2 thickness on the switching behavior of bistable MOS tunnel structures

Microelectronic engineering, 2006-02, Vol.83 (2), p.376-380

2006

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Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon

Microelectronics and reliability, 2007-04, Vol.47 (4), p.669-672

2007

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A MOS tunnel emitter transistor as a tool for determining the effective hole mass in a thin film of SiO2

Semiconductors (Woodbury, N.Y.), 2006-04, Vol.40 (4), p.491-496

2006

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First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.24.1.1-24.1.4

2019

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IEEE_Xplore

High insulating quality CaF2 pseudomorphic films on Si(111)

Applied physics letters, 2007-04, Vol.90 (14)

2007

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Static current-voltage characteristics of Au/CaF2/n-Si(111) MIS tunneling structures

Semiconductors (Woodbury, N.Y.), 2008-11, Vol.42 (11), p.1304-1308

2008

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Trapping of Hot Carriers in the Forksheet FET Wall: A TCAD Study

Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

Analysis of the Features of Hot-Carrier Degradation in FinFETs

Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs

Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices

Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures

Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric

On the temperature behavior of hot-carrier degradation

Determination of correlation length for thickness fluctuations in thin oxide and fluoride films

An analytical approach for physical modeling of hot-carrier induced degradation

Transient-current measurement of the trap charge density at interfaces of a thin-film metal∕ferroelectric∕metal structure

Electrical methods for estimating the correlation length of insulator thickness fluctuations in MIS tunnel structures

Physical modeling of hot-carrier degradation in nLDMOS transistors

Dominant mechanisms of hot-carrier degradation in short- and long-channel transistors

Determination of the characteristic length of thickness fluctuations for a tunneling-thin insulator in MIS structures from electrical data

The impact of self-heating and its implications on hot-carrier degradation – A modeling study

An aluminum-gate metal-oxide-silicon capacitor with a tunnel-thin oxide under the bidirectional electric stress

Effect of the spatial distribution of SiO2 thickness on the switching behavior of bistable MOS tunnel structures

Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon

A MOS tunnel emitter transistor as a tool for determining the effective hole mass in a thin film of SiO2

First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation

High insulating quality CaF2 pseudomorphic films on Si(111)

Static current-voltage characteristics of Au/CaF2/n-Si(111) MIS tunneling structures

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