UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 152

Sortiert nach

Trapping of Hot Carriers in the Forksheet FET Wall: A TCAD Study

IEEE electron device letters, 2023-02, Vol.44 (2), p.197-200

2023

Volltextzugriff (PDF)

Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

Journal of physics. Condensed matter, 2005-12, Vol.17 (50), p.8057-8068

2005

Volltextzugriff (PDF)

Analysis of the Features of Hot-Carrier Degradation in FinFETs

Semiconductors (Woodbury, N.Y.), 2018-10, Vol.52 (10), p.1298-1302

2018

Volltextzugriff (PDF)

Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1738-1742

2018

Volltextzugriff (PDF)

Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-01, Vol.35 (1)

2017

Volltextzugriff (PDF)

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.5A.2-1-5A.2-7

2022

Volltextzugriff (PDF)

Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures

Semiconductors (Woodbury, N.Y.), 2018-02, Vol.52 (2), p.242-247

2018

Volltextzugriff (PDF)

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.10A.1-1-10A.1-6

2022

Volltextzugriff (PDF)

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.1-6

2022

Volltextzugriff (PDF)

Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1427-1432

2015

Volltextzugriff (PDF)

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1267-1272

2010

Volltextzugriff (PDF)

Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric

Journal of computational electronics, 2014-09, Vol.13 (3), p.733-738

2014

Volltextzugriff (PDF)

On the temperature behavior of hot-carrier degradation

2015 IEEE International Integrated Reliability Workshop (IIRW), 2015, p.143-146

2015

Volltextzugriff (PDF)

Determination of correlation length for thickness fluctuations in thin oxide and fluoride films

Journal of physics. D, Applied physics, 2009-06, Vol.42 (11), p.115307-115307 (6)

2009

Volltextzugriff (PDF)

An analytical approach for physical modeling of hot-carrier induced degradation

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1525-1529

2011

Volltextzugriff (PDF)

Electrical methods for estimating the correlation length of insulator thickness fluctuations in MIS tunnel structures

Materials science in semiconductor processing, 2010-12, Vol.13 (5), p.405-410

2010

Volltextzugriff (PDF)

Physical modeling of hot-carrier degradation in nLDMOS transistors

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), 2014, p.58-62

2014

Volltextzugriff (PDF)

Dominant mechanisms of hot-carrier degradation in short- and long-channel transistors

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), 2014, p.63-68

2014

Volltextzugriff (PDF)

Low-leakage MIS structures with 1.5-6 nm CaF2 insulating layer on Si(111)

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.2247-2250

2007

Volltextzugriff (PDF)

Determination of the characteristic length of thickness fluctuations for a tunneling-thin insulator in MIS structures from electrical data

Semiconductors (Woodbury, N.Y.), 2007-10, Vol.41 (10), p.1181-1184

2007

Volltextzugriff (PDF)

The impact of self-heating and its implications on hot-carrier degradation – A modeling study

Microelectronics and reliability, 2021-07, Vol.122, p.114156, Article 114156

2021

Volltextzugriff (PDF)

Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.8A.2-1-8A.2-9

2024

Volltextzugriff (PDF)

Effect of the spatial distribution of SiO2 thickness on the switching behavior of bistable MOS tunnel structures

Microelectronic engineering, 2006-02, Vol.83 (2), p.376-380

2006

Volltextzugriff (PDF)

Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon

Microelectronics and reliability, 2007-04, Vol.47 (4), p.669-672

2007

Volltextzugriff (PDF)

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-6

2020

Volltextzugriff (PDF)

1 – 25 von 152

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(91)
Mit Volltextzugriff
(150)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(111)
Technology
(86)
Engineering
(80)
Engineering, Electrical & Electronic
(80)
Physical Sciences
(72)
Physics
(72)
Degradation
(58)
Physics, Applied
(58)
Hot Carriers
(41)
Stress
(38)
Hot-Carrier Degradation
(36)
Logic Gates
(25)
Transistors
(21)
Mosfet
(20)
Physics, Condensed Matter
(20)
Nanoscience & Nanotechnology
(18)
Science & Technology - Other Topics
(18)
Field Effect Transistors
(17)
Reliability
(15)
Carrier Transport
(14)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Trapping of Hot Carriers in the Forksheet FET Wall: A TCAD Study

Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

Analysis of the Features of Hot-Carrier Degradation in FinFETs

Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs

Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets

Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery

Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric

On the temperature behavior of hot-carrier degradation

Determination of correlation length for thickness fluctuations in thin oxide and fluoride films

An analytical approach for physical modeling of hot-carrier induced degradation

Electrical methods for estimating the correlation length of insulator thickness fluctuations in MIS tunnel structures

Physical modeling of hot-carrier degradation in nLDMOS transistors

Dominant mechanisms of hot-carrier degradation in short- and long-channel transistors

Low-leakage MIS structures with 1.5-6 nm CaF2 insulating layer on Si(111)

Determination of the characteristic length of thickness fluctuations for a tunneling-thin insulator in MIS structures from electrical data

The impact of self-heating and its implications on hot-carrier degradation – A modeling study

Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays

Effect of the spatial distribution of SiO2 thickness on the switching behavior of bistable MOS tunnel structures

Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

Suchergebnisse filtern