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Real-space imaging of confined magnetic skyrmion tubes

Nature communications, 2020-04, Vol.11 (1), p.1726-1726, Article 1726

2020

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Quantitative electron holography of biased semiconductor devices

Physical review letters, 2002-06, Vol.88 (23), p.238302-238302, Article 238302

2002

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Off‐axis electron holography of electrostatic potentials in unbiased and reverse biased focused ion beam milled semiconductor devices

Journal of microscopy (Oxford), 2004-06, Vol.214 (3), p.287-296

2004

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Quantitative electron holography of biased semiconductor devices

Journal of physics. Condensed matter, 2004-01, Vol.16 (2), p.S181-S192

2004

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Comparison of off-axis and in-line electron holography as quantitative dopant-profiling techniques

Philosophical magazine (Abingdon, England), 2006-12, Vol.86 (36), p.5805-5823

2006

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Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens

Applied physics letters, 2006-05, Vol.88 (21)

2006

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Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography

Ultramicroscopy, 2013-11, Vol.134, p.160-166

2013

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Quantitative off-axis electron holography of GaAs p-n junctions prepared by focused ion beam milling

Journal of microscopy (Oxford), 2009, Vol.233 (1), p.102-113

2009

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Three-dimensional electrostatic potential of a Si p-n junction revealed using tomographic electron holography

Journal of physics. Conference series, 2006-02, Vol.26 (1), p.29-32

2006

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The Determination and Interpretation of Electrically Active Charge Density Profiles at Reverse Biased p-n Junctions from Electron Holograms

Microscopy and microanalysis, 2002-08, Vol.8 (S02), p.42-43

2002

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Quantitative Examination of Reverse-Biased Semiconductor Devices using Off- Axis Electron Holography

Microscopy and microanalysis, 2002-08, Vol.8 (S02), p.518-519

2002

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Aberration correction: Some Advantages and Alternatives

Microscopy and microanalysis, 2004-08, Vol.10 (S03), p.22-23

2004

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Spin dynamics in bulk MnNiGa and Mn 1.4 Pt 0.9 Pd 0.1 Sn investigated by muon spin relaxation

Physical review. B, 2021-10, Vol.104 (13), Article 134414

2021

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Spin dynamics in bulk MnNiGa and Mn1.4 Pt0.9 Pd0.1 Sn investigated by muon spin relaxation

Physical review. B, 2021-10, Vol.104 (13), p.1

2021

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Comparative study of the structural and magnetic properties of Mn 1 / 3 NbS 2 and Cr 1 / 3 NbS 2

Physical review materials, 2022-02, Vol.6 (2), Article 024407

2022

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Improvement in electron holographic phase images of focused-ion-beam-milled GaAs and Si p - n junctions by in situ annealing

Applied physics letters, 2006-02, Vol.88 (6), p.063510-063510-3

2006

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Site-specific dopant profiling in a scanning electron microscopeusing focused ion beam prepared specimens

Applied physics letters, 2006-05, Vol.88 (21), p.212110-212110-3

2006

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Stability and metastability of skyrmions in thin lamellae of Cu 2 OSeO 3

Physical review research, 2020-01, Vol.2 (1), Article 013096

2020

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Off-Axis Electron Holography of Unbiased and Reverse-Biased Focused Ion Beam Milled Si p-n Junctions

Microscopy and microanalysis, 2005-02, Vol.11 (1), p.66-78

2005

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The Cambridge History of China

1979

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An Ultra-High-Tilt Two-Contact Electrical Biasing Specimen Holder for Electron Holography and Electron Tomography of Semiconductor Devices

Microscopy and microanalysis, 2004-08, Vol.10 (S02), p.1012-1013

2004

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The Cambridge History of China

1994

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Dopant Profiling in the TEM: Progress Towards Quantitative Electron Holography

Microscopy of Semiconducting Materials 2007, p.391-394

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Towards quantitative electron holography of electrostatic potentials in doped semiconductors

Microscopy of Semiconducting Materials, p.225-228

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Off-axis electron holography of focused ion beam milled GaAs and Si p-n junctions

Microscopy of Semiconducting Materials, p.221-224

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Real-space imaging of confined magnetic skyrmion tubes

Quantitative electron holography of biased semiconductor devices

Off‐axis electron holography of electrostatic potentials in unbiased and reverse biased focused ion beam milled semiconductor devices

Quantitative electron holography of biased semiconductor devices

Comparison of off-axis and in-line electron holography as quantitative dopant-profiling techniques

Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens

Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography

Quantitative off-axis electron holography of GaAs p-n junctions prepared by focused ion beam milling

Three-dimensional electrostatic potential of a Si p-n junction revealed using tomographic electron holography

The Determination and Interpretation of Electrically Active Charge Density Profiles at Reverse Biased p-n Junctions from Electron Holograms

Quantitative Examination of Reverse-Biased Semiconductor Devices using Off- Axis Electron Holography

Aberration correction: Some Advantages and Alternatives

Spin dynamics in bulk MnNiGa and Mn 1.4 Pt 0.9 Pd 0.1 Sn investigated by muon spin relaxation

Spin dynamics in bulk MnNiGa and Mn1.4 Pt0.9 Pd0.1 Sn investigated by muon spin relaxation

Comparative study of the structural and magnetic properties of Mn 1 / 3 NbS 2 and Cr 1 / 3 NbS 2

Improvement in electron holographic phase images of focused-ion-beam-milled GaAs and Si p - n junctions by in situ annealing

Site-specific dopant profiling in a scanning electron microscopeusing focused ion beam prepared specimens

Stability and metastability of skyrmions in thin lamellae of Cu 2 OSeO 3

Off-Axis Electron Holography of Unbiased and Reverse-Biased Focused Ion Beam Milled Si p-n Junctions

The Cambridge History of China

An Ultra-High-Tilt Two-Contact Electrical Biasing Specimen Holder for Electron Holography and Electron Tomography of Semiconductor Devices

The Cambridge History of China

Dopant Profiling in the TEM: Progress Towards Quantitative Electron Holography

Towards quantitative electron holography of electrostatic potentials in doped semiconductors

Off-axis electron holography of focused ion beam milled GaAs and Si p-n junctions

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