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Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

Journal of crystal growth, 2002-07, Vol.242 (1), p.55-69

2002

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GaN vertical and lateral polarity heterostructures on GaN substrates

Journal of crystal growth, 2011-10, Vol.332 (1), p.43-47

2011

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Resistivity control in unintentionally doped GaN films grown by MOCVD

Journal of crystal growth, 2004-01, Vol.260 (1), p.54-62

2004

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GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

Journal of crystal growth, 2001-03, Vol.223 (4), p.466-483

2001

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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

Journal of crystal growth, 2006-01, Vol.287 (2), p.610-614

2006

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The Thermodynamics and Kinetics of Phase Separation in III-V Semiconductor Alloys

Thin solid films, 2024-03, Vol.793, p.140255, Article 140255

2024

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Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3016-3024

2008

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Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence

Journal of electronic materials, 2008-05, Vol.37 (5), p.655-661

2008

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Assessing Hexagonal Boron Nitride Crystal Quality by Defect Sensitive Etching

Microscopy and microanalysis, 2017-07, Vol.23 (S1), p.1518-1519

2017

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Growth of high quality, epitaxial InSb nanowires

Journal of crystal growth, 2007-06, Vol.304 (2), p.399-401

2007

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Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging

Scripta materialia, 2009-10, Vol.61 (8), p.773-776

2009

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Structure and composition of Ba0.5Sr0.5TiO3 films deposited on (001) MgO substrates and the influence of sputtering pressure

Thin solid films, 2013-12, Vol.548, p.178-185

2013

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GaN decomposition in H 2 and N 2 at MOVPE temperatures and pressures

Journal of crystal growth, 2001-03, Vol.223 (4), p.466-483

2001

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Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy

Surface science, 1995-07, Vol.334 (1), p.29-38

1995

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Electron Channeling Contrast Imaging for Non-Destructive Analysis of Extended Defects in Semiconductor Thin Films and Device Structures

Microscopy and microanalysis, 2014-08, Vol.20 (S3), p.1064-1065

2014

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Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOX/sup TM/ substrates

IEEE transactions on nuclear science, 1997-12, Vol.44 (6), p.2101-2105

1997

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Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

Journal of crystal growth, 2007-06, Vol.304 (1), p.103-107

2007

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Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT

Solid-state electronics, 2005-02, Vol.49 (2), p.251-256

2005

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The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys

Journal of electronic materials, 2000-01, Vol.29 (1), p.21-26

2000

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Effects of Dislocations and Stacking Faults on the Reliability of 4H-SiC PiN Diodes

2006 IEEE International Reliability Physics Symposium Proceedings, 2006, p.90-94

2006

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Analysis of strain compensated GaAs-based InAs QD solar cells

2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, p.001157-001162

2009

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Epitaxial Si-based tunnel diodes

Thin solid films, 2000-12, Vol.380 (1), p.145-150

2000

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Composition and morphology of SiGe alloys grown on Si(1 0 0) using an Sb surfactant

Journal of crystal growth, 2000-06, Vol.213 (3), p.299-307

2000

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Raman scattering, photoluminescence, and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-05, Vol.93 (1), p.15-18

2002

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Morphological instability in InAs/GaSb heterostructures

Journal of crystal growth, 1998-08, Vol.191 (4), p.651-662

1998

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Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

GaN vertical and lateral polarity heterostructures on GaN substrates

Resistivity control in unintentionally doped GaN films grown by MOCVD

GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

The Thermodynamics and Kinetics of Phase Separation in III-V Semiconductor Alloys

Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs

Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence

Assessing Hexagonal Boron Nitride Crystal Quality by Defect Sensitive Etching

Growth of high quality, epitaxial InSb nanowires

Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging

Structure and composition of Ba0.5Sr0.5TiO3 films deposited on (001) MgO substrates and the influence of sputtering pressure

GaN decomposition in H 2 and N 2 at MOVPE temperatures and pressures

Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy

Electron Channeling Contrast Imaging for Non-Destructive Analysis of Extended Defects in Semiconductor Thin Films and Device Structures

Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOX/sup TM/ substrates

Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT

The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys

Effects of Dislocations and Stacking Faults on the Reliability of 4H-SiC PiN Diodes

Analysis of strain compensated GaAs-based InAs QD solar cells

Epitaxial Si-based tunnel diodes

Composition and morphology of SiGe alloys grown on Si(1 0 0) using an Sb surfactant

Raman scattering, photoluminescence, and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates

Morphological instability in InAs/GaSb heterostructures

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