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Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions

Journal of applied physics, 2019-05, Vol.125 (20)

2019

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Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes

Optics express, 2020-02, Vol.28 (4), p.4489-4500

2020

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Bidirectional light-emitting diode as a visible light source driven by alternating current

Nature communications, 2023-11, Vol.14 (1), p.7562-7562, Article 7562

2023

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Gallium nitride tunneling field-effect transistors exploiting polarization fields

Applied physics letters, 2020-02, Vol.116 (7)

2020

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Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs

Journal of physics. D, Applied physics, 2021-12, Vol.54 (49), p.495106

2021

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Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer

Applied physics letters, 2022-04, Vol.120 (17)

2022

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Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

Materials, 2021-12, Vol.15 (1), p.237

2021

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Role of Metallic Adlayer in Limiting Ge Incorporation into GaN

Materials, 2022-08, Vol.15 (17), p.5929

2022

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Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells

Journal of applied physics, 2020-01, Vol.127 (3)

2020

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Theoretical and Experimental Studies on Material Gain for Wide Polar InGaN Quantum Well‐Mechanism Leading to Electric Field Screening and Lasing

Advanced Physics Research, 2023-10, Vol.2 (10), p.n/a

2023

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Negative Magnetoresistivity in Highly Doped n-Type GaN

Materials, 2022-10, Vol.15 (20), p.7069

2022

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Harnessing III-Nitride Built-In Field in Multi-Quantum Well LEDs

ACS applied materials & interfaces, 2024-04, Vol.16 (18), p.24021-24028

2024

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Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JE02-08JE02-4

2013

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Nitride light-emitting diodes for cryogenic temperatures

Optics express, 2020-09, Vol.28 (20), p.30299-30308

2020

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Optical properties of N-polar GaN: The possible role of nitrogen vacancy-related defects

Applied surface science, 2021-11, Vol.566, p.150734, Article 150734

2021

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Hydrogen diffusion in GaN:Mg and GaN:Si

Journal of alloys and compounds, 2018-05, Vol.747, p.354-358

2018

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Corrigendum to “Sensitivity of N-polar GaN surface barrier to ambient gases” [Sens. Actuators B: Chem. 281(2019) 561–567]

Sensors and actuators. B, Chemical, 2020-04, Vol.309, p.127782, Article 127782

2020

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Competition between built-in polarization and p–n junction field in III-nitride heterostructures

Journal of applied physics, 2023-12, Vol.134 (24)

2023

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Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

ACS applied materials & interfaces, 2021-02, Vol.13 (6), p.7476-7484

2021

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Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface

Applied surface science, 2019-08, Vol.484, p.771-780

2019

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Electrically pumped blue laser diodes with nanoporous bottom cladding

Optics express, 2022-03, Vol.30 (7), p.10709-10722

2022

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Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light-Emitting Devices

ACS photonics, 2019-08, Vol.6 (8), p.1963-1971

2019

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Sensitivity of N-polar GaN surface barrier to ambient gases

Sensors and actuators. B, Chemical, 2019-02, Vol.281, p.561-567

2019

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Nanostars in Highly Si-Doped GaN

Crystal growth & design, 2023-07, Vol.23 (7), p.5093-5101

2023

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Composition Inhomogeneity in Nonpolar (101̅0) and Semipolar (202̅1) InAlN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Crystal growth & design, 2021-09, Vol.21 (9), p.5223-5230

2021

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Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions

Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes

Bidirectional light-emitting diode as a visible light source driven by alternating current

Gallium nitride tunneling field-effect transistors exploiting polarization fields

Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs

Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

Role of Metallic Adlayer in Limiting Ge Incorporation into GaN

Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells

Theoretical and Experimental Studies on Material Gain for Wide Polar InGaN Quantum Well‐Mechanism Leading to Electric Field Screening and Lasing

Negative Magnetoresistivity in Highly Doped n-Type GaN

Harnessing III-Nitride Built-In Field in Multi-Quantum Well LEDs

Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy

Nitride light-emitting diodes for cryogenic temperatures

Optical properties of N-polar GaN: The possible role of nitrogen vacancy-related defects

Hydrogen diffusion in GaN:Mg and GaN:Si

Corrigendum to “Sensitivity of N-polar GaN surface barrier to ambient gases” [Sens. Actuators B: Chem. 281(2019) 561–567]

Competition between built-in polarization and p–n junction field in III-nitride heterostructures

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface

Electrically pumped blue laser diodes with nanoporous bottom cladding

Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light-Emitting Devices

Sensitivity of N-polar GaN surface barrier to ambient gases

Nanostars in Highly Si-Doped GaN

Composition Inhomogeneity in Nonpolar (101̅0) and Semipolar (202̅1) InAlN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

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