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Stack of two III-nitride laser diodes interconnected by a tunnel junction

Optics express, 2019-02, Vol.27 (4), p.5784-5791

2019

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Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

Optics express, 2022-07, Vol.30 (15), p.27004-27014

2022

Volltextzugriff (PDF)

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Journal of physics. D, Applied physics, 2014-02, Vol.47 (7), p.1-18

2014

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Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

Optics express, 2021-01, Vol.29 (2), p.1824-1837

2021

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III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources

Japanese Journal of Applied Physics, 2022-01, Vol.61 (SA), p.SA0801

2022

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Electrical transport properties of highly doped N-type GaN materials

Semiconductor science and technology, 2022-05, Vol.37 (5), p.55012

2022

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Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy

Optics express, 2020-11, Vol.28 (23), p.35321-35329

2020

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Stacking faults in plastically relaxed InGaN epilayers

Semiconductor science and technology, 2020-03, Vol.35 (3), p.34003

2020

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Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

Applied physics letters, 2018-01, Vol.112 (2)

2018

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Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

Journal of crystal growth, 2013-03, Vol.367, p.115-121

2013

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Strain relaxation in semipolar ( 20 2 ¯ 1 ) InGaN grown by plasma assisted molecular beam epitaxy

Journal of applied physics, 2016-05, Vol.119 (18)

2016

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Indium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy

Journal of crystal growth, 2017-02, Vol.459, p.129-134

2017

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Comparative study of semipolar (202¯1), nonpolar (101¯0) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy

Journal of crystal growth, 2017-05, Vol.465, p.43-47

2017

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Cyan laser diode grown by plasma-assisted molecular beam epitaxy

Applied physics letters, 2014-01, Vol.104 (2), p.23503

2014

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Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

Materials science in semiconductor processing, 2019-03, Vol.91, p.387-391

2019

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Determination of gain in AlGaN cladding free nitride laser diodes

Applied physics letters, 2013-08, Vol.103 (6)

2013

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Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Journal of applied physics, 2011-09, Vol.110 (6), p.063110-063110-7

2011

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MBE fabrication of III-N-based laser diodes and its development to industrial system

Journal of crystal growth, 2013-09, Vol.378, p.278-282

2013

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High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

Journal of crystal growth, 2015-09, Vol.425, p.398-400

2015

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Growth mechanisms in semipolar (202¯1) and nonpolar m-plane (101¯0) AlGaN/GaN structures grown by PAMBE under N-rich conditions

Journal of crystal growth, 2013-08, Vol.377, p.184-191

2013

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Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy

Applied physics letters, 2013-06, Vol.102 (25)

2013

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Publisher’s Note: “Cyan laser diode grown by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 104 , 023503 (2014)]

Applied physics letters, 2014-05, Vol.104 (20)

2014

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InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2012-03, Vol.30 (2)

2012

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Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

Applied physics letters, 2014-05, Vol.104 (21)

2014

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"Aluminum free nitride laser diodes grown by plasma assisted MBE"

2016 74th Annual Device Research Conference (DRC), 2016, p.1-1

2016

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Stack of two III-nitride laser diodes interconnected by a tunnel junction

Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources

Electrical transport properties of highly doped N-type GaN materials

Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy

Stacking faults in plastically relaxed InGaN epilayers

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

Strain relaxation in semipolar ( 20 2 ¯ 1 ) InGaN grown by plasma assisted molecular beam epitaxy

Indium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy

Comparative study of semipolar (202¯1), nonpolar (101¯0) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

Determination of gain in AlGaN cladding free nitride laser diodes

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

MBE fabrication of III-N-based laser diodes and its development to industrial system

High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

Growth mechanisms in semipolar (202¯1) and nonpolar m-plane (101¯0) AlGaN/GaN structures grown by PAMBE under N-rich conditions

Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy

Publisher’s Note: “Cyan laser diode grown by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 104 , 023503 (2014)]

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

"Aluminum free nitride laser diodes grown by plasma assisted MBE"

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