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EuroIntervention : journal of EuroPCR in collaboration with the Working Group on Interventional Cardiology of the European Society of Cardiology, 2012-09, Vol.8 (5), p.571

2012

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Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD)

Materials science & engineering. B, Solid-state materials for advanced technology, 2015-06, Vol.196, p.28-34

2015

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Polysilicon thin films fabricated by solid phase crystallization using reformed crystallization annealing technique

Thin solid films, 2014-01, Vol.551, p.181-187

2014

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Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Materials science in semiconductor processing, 2013-04, Vol.16 (2), p.344-351

2013

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Impact of intracoronary bone marrow cell therapy on left ventricular function in the setting of ST-segment elevation myocardial infarction: a collaborative meta-analysis

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Gender-based acute outcome in percutaneous coronary intervention of chronic total coronary occlusion

Morbidity and mortality of nonagenarians undergoing CoreValve implantation

Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals

Percutaneous Mitral Repair with the MitraClip System in Patients with Mild‐to‐Moderate and Severe Heart Failure: A Single‐Centre Experience

Structural peculiarities and aging effect in hydrogenated a-Si prepared by inductively coupled plasma assisted chemical vapor deposition technique

Early and mid-term outcomes of percutaneous mitral valve repair with the MitraClip®: comparative analysis of different EuroSCORE strata

Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD)

Polysilicon thin films fabricated by solid phase crystallization using reformed crystallization annealing technique

Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

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