UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Mining the Generation Xers' job attitudes by artificial neural network and decision tree—empirical evidence in Taiwan

Expert systems with applications, 2005-11, Vol.29 (4), p.783-794

2005

Volltextzugriff (PDF)

從人力資本與勞動市場區隔觀點探討非自願離職者再就業的決定因素－洛基對數線性分析

管理學報, 2006-02, Vol.23 (1), p.061-075

2006

Volltextzugriff (PDF)

性別歧視知覺對組織承諾干擾效果之研究--以臺灣南部女性主管為例

臺大管理論叢, 2005-06, Vol.15 (2), p.71-98

2005

Volltextzugriff (PDF)

性別歧視知覺對組織承諾干擾效果之研究－以台灣南部女性主管為例

臺大管理論叢, 2004-12, Vol.15 (2)

2004

Volltextzugriff (PDF)

A Smart Gate Driver IC for GaN Power HEMTs With Dynamic Ringing Suppression

IEEE transactions on power electronics, 2021-12, Vol.36 (12), p.14119-14132

2021

Volltextzugriff (PDF)

Junction-less poly-Ge FinFET and charge-trap NVM fabricated by laser-enabled low thermal budget processes

Applied physics letters, 2016-06, Vol.108 (24)

2016

Volltextzugriff (PDF)

Optimizing the Double Inverted Pendulum′s Performance via the Uniform Neuro Multiobjective Genetic Algorithm

国际自动化与计算杂志：英文版, 2017 (6), p.686-695

Dony Hidayat Al-Janan Hao-Chin Chang Yeh-Peng Chen Tung-Kuan Liu

2017

Volltextzugriff (PDF)

Optimizing the Double Inverted Pendulum′s Performance via the Uniform Neuro Multiobjective Genetic Algorithm

国际自动化与计算杂志：英文版, 2017, Vol.14 (6), p.686-695

2017

Volltextzugriff (PDF)

Recent progress in low-temperature-process monolithic three dimension technology

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

Volltextzugriff (PDF)

The Impact of Junction Doping Distribution on Device Performance Variability and Reliability for Fully Depleted Silicon on Insulator With Thin Box Layer MOSFETs

IEEE transactions on nanotechnology, 2015-03, Vol.14 (2), p.330-337

2015

Volltextzugriff (PDF)

Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits

Micromachines (Basel), 2020-07, Vol.11 (8), p.741

2020

Volltextzugriff (PDF)

Sub-60mV-swing negative-capacitance FinFET without hysteresis

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.22.6.1-22.6.4

2015

Volltextzugriff (PDF)

The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs

Journal of electronic materials, 2023-02, Vol.52 (2), p.1391-1399

2023

Volltextzugriff (PDF)

Hot Carrier Injection (HCI) Reliability of Fabricated Y-gate HEMT with Various Top Length

ECS journal of solid state science and technology, 2023-03, Vol.12 (3), p.35001

2023

Volltextzugriff (PDF)

Hot Carrier Injection Reliability of Fabricated N- and P-Type Multi FinFETs with Different TiN Stacks

ECS journal of solid state science and technology, 2023-03, Vol.12 (3), p.35007

2023

Volltextzugriff (PDF)

Enabling n-type polycrystalline Ge junctionless FinFET of low thermal budget by in situ doping of channel and visible pulsed laser annealing

Applied physics express, 2017-02, Vol.10 (2), p.26502

2017

Volltextzugriff (PDF)

Digital Multi-Value Logic Gates for Monolithic GaN Power ICs

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.282-285

2020

Volltextzugriff (PDF)

A Novel Strain Method for Enhancement of 90-nm Node and Beyond FUSI-Gated CMOS Performance

IEEE electron device letters, 2007-02, Vol.28 (2), p.111-113

2007

Volltextzugriff (PDF)

Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.31.7.1-31.7.4

2018

Volltextzugriff (PDF)

Location-controlled-grain Technique for Monolithic 3D BEOL FinFET Circuits

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.11.3.1-11.3.4

2018

Volltextzugriff (PDF)

Low-cost and TSV-free monolithic 3D-IC with heterogeneous integration of logic, memory and sensor analogy circuitry for Internet of Things

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.25.4.1-25.4.4

2015

Volltextzugriff (PDF)

Enabling low power BEOL compatible monolithic 3D+ nanoelectronics for IoTs using local and selective far-infrared ray laser anneal technology

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.8.7.1-8.7.4

2015

Volltextzugriff (PDF)

a-SiGeC thin film photovoltaic enabled self-power monolithic 3D IC under indoor illumination

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016, p.1-2

2016

Volltextzugriff (PDF)

Logic/memory hybrid 3D sequentially integrated circuit using low thermal budget laser process

2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015, p.1-3

2015

Volltextzugriff (PDF)

Footprint-efficient and power-saving monolithic IoT 3D+ IC constructed by BEOL-compatible sub-10nm high aspect ratio (AR>7) single-grained Si FinFETs with record high Ion of 0.38 mA/μm and steep-swing of 65 mV/dec. and Ion/Ioff ratio of 8

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.9.1.1-9.1.4

2016

Volltextzugriff (PDF)

1 – 25 von 34

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(17)
Mit Volltextzugriff
(23)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(18)
Technology
(14)
Engineering
(11)
Engineering, Electrical & Electronic
(11)
Logic Gates
(11)
Physical Sciences
(10)
Physics
(10)
Physics, Applied
(10)
Integrated Circuits
(9)
Silicon
(9)
Three-Dimensional Displays
(9)
Finfets
(6)
Annealing
(5)
Crystallization
(5)
Monolithic 3d
(5)
Devices
(4)
Materials Science
(4)
Materials Science, Multidisciplinary
(4)
Random Access Memory
(4)
Threshold Voltage
(4)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Mining the Generation Xers' job attitudes by artificial neural network and decision tree—empirical evidence in Taiwan

從人力資本與勞動市場區隔觀點探討非自願離職者再就業的決定因素－洛基對數線性分析

性別歧視知覺對組織承諾干擾效果之研究--以臺灣南部女性主管為例

性別歧視知覺對組織承諾干擾效果之研究－以台灣南部女性主管為例

A Smart Gate Driver IC for GaN Power HEMTs With Dynamic Ringing Suppression

Junction-less poly-Ge FinFET and charge-trap NVM fabricated by laser-enabled low thermal budget processes

Optimizing the Double Inverted Pendulum′s Performance via the Uniform Neuro Multiobjective Genetic Algorithm

Optimizing the Double Inverted Pendulum′s Performance via the Uniform Neuro Multiobjective Genetic Algorithm

Recent progress in low-temperature-process monolithic three dimension technology

The Impact of Junction Doping Distribution on Device Performance Variability and Reliability for Fully Depleted Silicon on Insulator With Thin Box Layer MOSFETs

Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits

Sub-60mV-swing negative-capacitance FinFET without hysteresis

The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs

Hot Carrier Injection (HCI) Reliability of Fabricated Y-gate HEMT with Various Top Length

Hot Carrier Injection Reliability of Fabricated N- and P-Type Multi FinFETs with Different TiN Stacks

Enabling n-type polycrystalline Ge junctionless FinFET of low thermal budget by in situ doping of channel and visible pulsed laser annealing

Digital Multi-Value Logic Gates for Monolithic GaN Power ICs

A Novel Strain Method for Enhancement of 90-nm Node and Beyond FUSI-Gated CMOS Performance

Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Location-controlled-grain Technique for Monolithic 3D BEOL FinFET Circuits

Low-cost and TSV-free monolithic 3D-IC with heterogeneous integration of logic, memory and sensor analogy circuitry for Internet of Things

Enabling low power BEOL compatible monolithic 3D+ nanoelectronics for IoTs using local and selective far-infrared ray laser anneal technology

a-SiGeC thin film photovoltaic enabled self-power monolithic 3D IC under indoor illumination

Logic/memory hybrid 3D sequentially integrated circuit using low thermal budget laser process

Footprint-efficient and power-saving monolithic IoT 3D+ IC constructed by BEOL-compatible sub-10nm high aspect ratio (AR>7) single-grained Si FinFETs with record high Ion of 0.38 mA/μm and steep-swing of 65 mV/dec. and Ion/Ioff ratio of 8

Suchergebnisse filtern