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Silicon Nanowire Arrays for Label-Free Detection of DNA

Analytical chemistry (Washington), 2007-05, Vol.79 (9), p.3291-3297

2007

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Detection of MicroRNAs Using Target-Guided Formation of Conducting Polymer Nanowires in Nanogaps

Journal of the American Chemical Society, 2007-05, Vol.129 (17), p.5437-5443

2007

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Strained n-Channel FinFETs Featuring In Situ Doped Silicon-Carbon (\hbox\hbox) Source and Drain Stressors With High Carbon Content

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2475-2483

2008

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Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2910-2917

2007

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IEEE_Xplore

An Integrated System Scaling Solution for Future High Performance Computing

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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IEEE_Xplore

Direct Detection of Nucleic Acids by Tagging Phosphates on Their Backbones with Conductive Nanoparticles

Angewandte Chemie (International ed.), 2007-01, Vol.46 (12), p.2051-2054

2007

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In Situ Surface Passivation and CMOS-Compatible Palladium-Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs

IEEE electron device letters, 2008-06, Vol.29 (6), p.553-556

2008

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IEEE_Xplore

Dielectric breakdown mechanisms in gate oxides

Journal of applied physics, 2005-12, Vol.98 (12), p.121301-121301-36

2005

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Quantum Size Effects on Dielectric Constants and Optical Absorption of Ultrathin Silicon Films

IEEE electron device letters, 2008-12, Vol.29 (12), p.1302-1305

2008

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IEEE_Xplore

Fundamental narrow MOSFET gate dielectric breakdown behaviors and their impacts on device performance

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.473-483

2005

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IEEE_Xplore

Schottky-Ohmic transition in metal-all-around electrical contacts to silicon nanowires

Journal of applied physics, 2009-05, Vol.105 (9), p.094508-094508-7

2009

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Strained p-Channel FinFETs With Extended \Pi -Shaped Silicon-Germanium Source and Drain Stressors

IEEE electron device letters, 2007-10, Vol.28 (10), p.905-908

2007

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IEEE_Xplore

Strained n-Channel Transistors With Silicon Source and Drain Regions and Embedded Silicon/Germanium as Strain-Transfer Structure

IEEE electron device letters, 2007-07, Vol.28 (7), p.609-612

2007

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IEEE_Xplore

Strained -MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance

IEEE transactions on electron devices, 2008-03, Vol.55 (3), p.850-857

2008

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IEEE_Xplore

Study of Dopant Redistribution at the Substrate-Source/Drain p-n Junction of Nanoscale MOSFET During Progressive Breakdown

IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2786-2791

2006

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IEEE_Xplore

A nanoscale analysis of the leakage current in SiO2 breakdown

Applied physics letters, 2008-07, Vol.93 (2)

2008

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Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon-Carbon Source/Drain and Tensile-Stress Liner

IEEE electron device letters, 2007-04, Vol.28 (4), p.301-304

2007

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IEEE_Xplore

Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications

IEEE transactions on electron devices, 2006-08, Vol.53 (8), p.1877-1884

2006

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IEEE_Xplore

Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment

Journal of applied physics, 2008-11, Vol.104 (9)

2008

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N-Channel (110)-Sidewall Strained FinFETs With Silicon-Carbon Source and Drain Stressors and Tensile Capping Layer

IEEE electron device letters, 2007-11, Vol.28 (11), p.1014-1017

2007

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IEEE_Xplore

Silicon-Carbon Stressors With High Substitutional Carbon Concentration and In Situ Doping Formed in Source/Drain Extensions of n-Channel Transistors

IEEE electron device letters, 2008-05, Vol.29 (5), p.460-463

2008

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IEEE_Xplore

A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

IEEE electron device letters, 2008-02, Vol.29 (2), p.192-194

2008

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IEEE_Xplore

Strained Thin-Body p-MOSFET With Condensed Silicon-Germanium Source/Drain for Enhanced Drive Current Performance

IEEE electron device letters, 2007-06, Vol.28 (6), p.509-512

2007

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IEEE_Xplore

Strained-SOI n-Channel Transistor With Silicon-Carbon Source/Drain Regions for Carrier Transport Enhancement

IEEE electron device letters, 2006-09, Vol.27 (9), p.778-780

2006

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IEEE_Xplore

Drive-Current Enhancement in FinFETs Using Gate-Induced Stress

IEEE electron device letters, 2006-09, Vol.27 (9), p.769-771

2006

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IEEE_Xplore

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Silicon Nanowire Arrays for Label-Free Detection of DNA

Detection of MicroRNAs Using Target-Guided Formation of Conducting Polymer Nanowires in Nanogaps

Strained n-Channel FinFETs Featuring In Situ Doped Silicon-Carbon (\hbox\hbox) Source and Drain Stressors With High Carbon Content

Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions

An Integrated System Scaling Solution for Future High Performance Computing

Direct Detection of Nucleic Acids by Tagging Phosphates on Their Backbones with Conductive Nanoparticles

In Situ Surface Passivation and CMOS-Compatible Palladium-Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs

Dielectric breakdown mechanisms in gate oxides

Quantum Size Effects on Dielectric Constants and Optical Absorption of Ultrathin Silicon Films

Fundamental narrow MOSFET gate dielectric breakdown behaviors and their impacts on device performance

Schottky-Ohmic transition in metal-all-around electrical contacts to silicon nanowires

Strained p-Channel FinFETs With Extended \Pi -Shaped Silicon-Germanium Source and Drain Stressors

Strained n-Channel Transistors With Silicon Source and Drain Regions and Embedded Silicon/Germanium as Strain-Transfer Structure

Strained -MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance

Study of Dopant Redistribution at the Substrate-Source/Drain p-n Junction of Nanoscale MOSFET During Progressive Breakdown

A nanoscale analysis of the leakage current in SiO2 breakdown

Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon-Carbon Source/Drain and Tensile-Stress Liner

Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications

Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment

N-Channel (110)-Sidewall Strained FinFETs With Silicon-Carbon Source and Drain Stressors and Tensile Capping Layer

Silicon-Carbon Stressors With High Substitutional Carbon Concentration and In Situ Doping Formed in Source/Drain Extensions of n-Channel Transistors

A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

Strained Thin-Body p-MOSFET With Condensed Silicon-Germanium Source/Drain for Enhanced Drive Current Performance

Strained-SOI n-Channel Transistor With Silicon-Carbon Source/Drain Regions for Carrier Transport Enhancement

Drive-Current Enhancement in FinFETs Using Gate-Induced Stress

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