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High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

IEEE electron device letters, 2006-05, Vol.27 (5), p.383-386

2006

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N-type Schottky barrier source/drain MOSFET using ytterbium silicide

IEEE electron device letters, 2004-08, Vol.25 (8), p.565-567

2004

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Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

IEEE electron device letters, 2003-04, Vol.24 (4), p.230-232

2003

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Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

IEEE electron device letters, 2004-05, Vol.25 (5), p.268-270

2004

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Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

IEEE electron device letters, 2008-06, Vol.29 (6), p.595-598

2008

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Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs

IEEE electron device letters, 2002-09, Vol.23 (9), p.526-528

2002

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Fabrication of all-transparent polymer-based and encapsulated nanofluidic devices using nano-indentation lithography

Microsystems & nanoengineering, 2017-03, Vol.3 (1), p.16084-16084, Article 16084

2017

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Laser thermal processing of amorphous silicon gates to reduce poly-depletion in CMOS devices

IEEE transactions on electron devices, 2004-05, Vol.51 (5), p.669-676

2004

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Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications

IEEE transactions on electron devices, 2006-08, Vol.53 (8), p.1877-1884

2006

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Percolation resistance evolution during progressive breakdown in narrow MOSFETs

IEEE electron device letters, 2006-05, Vol.27 (5), p.396-398

2006

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A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator

IEEE electron device letters, 2006-05, Vol.27 (5), p.350-353

2006

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Photophysical properties and TPA optical limiting of two new organic compounds

Chemical physics letters, 2001-01, Vol.333 (5), p.387-390

2001

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Work-Function Tuning of TaN by High-Temperature Metal Intermixing Technique for Gate-First CMOS Process

IEEE electron device letters, 2006-10, Vol.27 (10), p.811-813

2006

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Differential Expression Study of a Potentially Novel Gene in Candida albicans Morphology Switching

International journal of infectious diseases, 2008, Vol.12, p.e289-e289

2008

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Multiple-pulse laser thermal annealing for the formation of Co-silicided junction

IEEE electron device letters, 2006-04, Vol.27 (4), p.237-239

2006

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THU0005 Predictors of END Stage Renal Disease in Patients with Lupus Nephritis: A Nationwide Cohort Study in Taiwan

Annals of the rheumatic diseases, 2014-06, Vol.73 (Suppl 2), p.178-178

2014

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Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

IEEE electron device letters, 2006-10, Vol.27 (10), p.824-826

2006

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The Crohn's disease‐associated adherent‐invasive Escherichia coli strain LF82 replicates in mature phagolysosomes within J774 macrophages

Cellular microbiology, 2006-03, Vol.8 (3), p.471-484

2006

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Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM

Microelectronics and reliability, 2003-09, Vol.43 (9), p.1471-1476

2003

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Nano-characterisation of dielectric breakdown in the various advanced gate stack MOSFETs

International journal of nanotechnology., 2007, Vol.4 (4), p.347

2007

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CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach

IEEE electron device letters, 2007-11, Vol.28 (11), p.1021-1024

2007

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Decoration of activated carbon nanotubes with copper and nickel

Carbon (New York), 2000, Vol.38 (3), p.363-372

2000

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Thermally robust TaTb/sub x/N metal gate electrode for n-MOSFETs applications

IEEE electron device letters, 2005-02, Vol.26 (2), p.75-77

2005

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Robust High-Quality HfN–>tex<$hbox HfO_2$>/tex<Gate Stack for Advanced MOS Device Applications

IEEE electron device letters, 2004-02, Vol.25 (2), p.70-72

2004

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Structural transformation and field emission enhancement of carbon nanofibers by energetic argon plasma post-treatment

Applied physics letters, 2004-11, Vol.85 (20), p.4732-4734

2004

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High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

N-type Schottky barrier source/drain MOSFET using ytterbium silicide

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs

Fabrication of all-transparent polymer-based and encapsulated nanofluidic devices using nano-indentation lithography

Laser thermal processing of amorphous silicon gates to reduce poly-depletion in CMOS devices

Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications

Percolation resistance evolution during progressive breakdown in narrow MOSFETs

A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator

Photophysical properties and TPA optical limiting of two new organic compounds

Work-Function Tuning of TaN by High-Temperature Metal Intermixing Technique for Gate-First CMOS Process

Differential Expression Study of a Potentially Novel Gene in Candida albicans Morphology Switching

Multiple-pulse laser thermal annealing for the formation of Co-silicided junction

THU0005 Predictors of END Stage Renal Disease in Patients with Lupus Nephritis: A Nationwide Cohort Study in Taiwan

Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

The Crohn's disease‐associated adherent‐invasive Escherichia coli strain LF82 replicates in mature phagolysosomes within J774 macrophages

Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM

Nano-characterisation of dielectric breakdown in the various advanced gate stack MOSFETs

CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach

Decoration of activated carbon nanotubes with copper and nickel

Thermally robust TaTb/sub x/N metal gate electrode for n-MOSFETs applications

Robust High-Quality HfN–>tex<$hbox HfO_2$>/tex<Gate Stack for Advanced MOS Device Applications

Structural transformation and field emission enhancement of carbon nanofibers by energetic argon plasma post-treatment

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