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AC conductivity of hBN thin film on Si(111): A high temperature study

Journal of applied physics, 2022-11, Vol.132 (19)

2022

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Electrical properties and evaluation of band tail states in Mg doped p-type multilayer hBN

Journal of applied physics, 2024-09, Vol.136 (12)

2024

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A hBN/Ga2O3 pn junction diode

Scientific reports, 2024-10, Vol.14 (1), p.23484-7, Article 23484

2024

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Heteroepitaxially grown homojunction gallium oxide PN diodes using ion implantation technologies

Materials today advances, 2024-06, Vol.22, p.100499, Article 100499

2024

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Electrical performance study of Schottky barrier diodes using ion implanted β-Ga2O3 epilayers grown on sapphire substrates

Materials today advances, 2023-03, Vol.17, p.100346, Article 100346

2023

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Nanocrystalline diamond as an electronic material: An impedance spectroscopic and Hall effect measurement study

Journal of applied physics, 2010-02, Vol.107 (3), p.033716-033716-8

2010

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Thermal stability, work function and Fermi level analysis of 2D multi-layered hexagonal boron nitride films

Microelectronic engineering, 2024-01, Vol.283, p.112106, Article 112106

2024

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Electronic properties of homoepitaxial (111) highly boron-doped diamond films

Journal of applied physics, 2008-03, Vol.103 (5), p.054503-054503-7

2008

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Advanced Li-S Battery Configuration Featuring Sulfur-Coated Separator and Interwoven rGO/CNT Fabric Current Collector

Small (Weinheim an der Bergstrasse, Germany), 2024-10, p.e2405365

2024

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Comparison of performance in GaN-HEMTs on thin SiC substrate and sapphire substrates

Chinese journal of physics (Taipei), 2024-08, Vol.90, p.1117-1124

2024

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Undoped β-Ga 2 O 3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

ACS applied electronic materials, 2024-01, Vol.6 (1), p.568-575

2024

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Performance Improvement of Enhanced-Mode β-Ga 2 O 3 MOSFETs by Partial Gate Recess Structure

ACS applied electronic materials, 2024-10, Vol.6 (10), p.7106-7112

2024

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Performance Improvement of Enhanced-Mode β‑Ga2O3 MOSFETs by Partial Gate Recess Structure

ACS applied electronic materials, 2024-10, Vol.6 (10), p.7106-7112

2024

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A hBN/Ga 2 O 3 pn junction diode

Scientific reports, 2024-10, Vol.14 (1), p.23484

2024

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β-Ga2O3 MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD

Discover nano, 2023-06, Vol.18 (1), p.92, Article 92

2023

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Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates

Electronics (Basel), 2023-04, Vol.12 (9), p.2033

2023

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Undoped β‑Ga2O3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

ACS applied electronic materials, 2024-01, Vol.6 (1), p.568-575

2024

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Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition

Materials today advances, 2023-06, Vol.18, p.100382, Article 100382

2023

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Material Properties of n ‐Type β‐Ga 2 O 3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

Advanced electronic materials, 2024-02

2024

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Synthesis of carbon nanotubes on single crystal diamond

Carbon (New York), 2010-09, Vol.48 (11), p.3027-3032

2010

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Nanodiamond-gated diamond field-effect transistor for chemical sensing using hydrogen-induced transfer doping for channel formation

Applied physics letters, 2010-11, Vol.97 (20), p.203503-203503-3

2010

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Multiple conduction paths in boron δ -doped diamond structures

Applied physics letters, 2009-02, Vol.94 (5), p.052107-052107-3

2009

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An impedance spectroscopic investigation of the electrical properties of δ -doped diamond structures

Journal of applied physics, 2009-11, Vol.106 (10), p.103707-103707-7

2009

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Synthesis of carbon nanotubes on single crystal diamond

Carbon (New York), 2010, Vol.48 (11), p.3027-3032

2010

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Device Simulation and Design Optimization for Diamond Based Insulated-gate Bipolar Transistors

MRS proceedings, 2006, Vol.956, Article 0956-J09-17

2006

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AC conductivity of hBN thin film on Si(111): A high temperature study

Electrical properties and evaluation of band tail states in Mg doped p-type multilayer hBN

A hBN/Ga2O3 pn junction diode

Heteroepitaxially grown homojunction gallium oxide PN diodes using ion implantation technologies

Electrical performance study of Schottky barrier diodes using ion implanted β-Ga2O3 epilayers grown on sapphire substrates

Nanocrystalline diamond as an electronic material: An impedance spectroscopic and Hall effect measurement study

Thermal stability, work function and Fermi level analysis of 2D multi-layered hexagonal boron nitride films

Electronic properties of homoepitaxial (111) highly boron-doped diamond films

Advanced Li-S Battery Configuration Featuring Sulfur-Coated Separator and Interwoven rGO/CNT Fabric Current Collector

Comparison of performance in GaN-HEMTs on thin SiC substrate and sapphire substrates

Undoped β-Ga 2 O 3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Performance Improvement of Enhanced-Mode β-Ga 2 O 3 MOSFETs by Partial Gate Recess Structure

Performance Improvement of Enhanced-Mode β‑Ga2O3 MOSFETs by Partial Gate Recess Structure

A hBN/Ga 2 O 3 pn junction diode

β-Ga2O3 MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD

Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates

Undoped β‑Ga2O3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition

Material Properties of n ‐Type β‐Ga 2 O 3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

Synthesis of carbon nanotubes on single crystal diamond

Nanodiamond-gated diamond field-effect transistor for chemical sensing using hydrogen-induced transfer doping for channel formation

Multiple conduction paths in boron δ -doped diamond structures

An impedance spectroscopic investigation of the electrical properties of δ -doped diamond structures

Synthesis of carbon nanotubes on single crystal diamond

Device Simulation and Design Optimization for Diamond Based Insulated-gate Bipolar Transistors

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