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Electronic structure of vertically coupled quantum dot-ring heterostructures under applied electromagnetic probes. A finite-element approach

Scientific reports, 2021-02, Vol.11 (1), p.4015-16, Article 4015

2021

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Exciton states in conical quantum dots under applied electric and magnetic fields

Optics and laser technology, 2021-07, Vol.139, p.106953, Article 106953

2021

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Electronic states in GaAs-(Al,Ga)As eccentric quantum rings under nonresonant intense laser and magnetic fields

Scientific reports, 2019-02, Vol.9 (1), p.1427-1427, Article 1427

2019

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Background impurities in a delta-doped QW. Part II: Edge doping

Semiconductor science and technology, 2021-04, Vol.36 (4), p.45011

2021

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Electron-related optical responses in triangular quantum dots

Physica. E, Low-dimensional systems & nanostructures, 2014-06, Vol.60, p.127-132

2014

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Background impurities and a delta-doped QW. Part I: Center doping

Semiconductor science and technology, 2019-12, Vol.34 (12), p.125009

2019

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Theoretical study of electronic and optical properties in doped quantum structures with Razavy confining potential: effects of external fields

Journal of computational electronics, 2022-04, Vol.21 (2), p.378-395

2022

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Impurity binding energy for δ-doped quantum well structures

Bulletin of materials science, 2014-10, Vol.37 (6), p.1347-1351

2014

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Hole subbands in quantum wells: exact solution for six-dimensional Luttinger–Kohn Hamiltonian

Semiconductor science and technology, 2009-02, Vol.24 (2), p.025006-025006 (7)

2009

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Refraction index modulation induced with transverse electric field in double tunnel-coupled GaAs AlGaAs quantum wells

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12076

2015

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On the possibility of tuning the energy separation between space-quantized levels in a quantum well

Philosophical magazine letters, 2013-01, Vol.93 (1), p.42-49

2013

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Analytical approach to the impurity scattering in quantum wells

Physica Status Solidi (b), 2007-06, Vol.244 (6), p.2002-2009

2007

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The influence of the ionized impurity delta-layer potential in the quantum well on impurity binding energy

Journal of applied physics, 2011-03, Vol.109 (6), p.064303-064303-5

2011

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Generation of millimeter radiation due to electric-field-induced electron-transit-time resonance in indium phosphide

JETP letters, 2001-03, Vol.73 (5), p.219-222

2001

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Temperature shift of intraband absorption peak in tunnel-coupled QW structure

Optical materials, 2017-04, Vol.66, p.160-165

2017

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Background impurities in Si 0.8 Ge 0.2 /Si/Si 0.8 Ge 0.2 n-type δ-doped QW: Background impurities in Si0.8Ge0.2/Si/Si0.8Ge0.2 n-type δ-doped QW

physica status solidi (b), 2017-04, Vol.254 (4), p.1600464

2017

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Background impurities in Si sub(0.8) Ge sub(0.2)/Si/Si sub(0.8) Ge sub(0.2) n-type delta -doped QW

Physica Status Solidi. B: Basic Solid State Physics, 2017-04, Vol.254 (4), p.np-np

2017

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On intersubband absorption of radiation in delta-doped QWs

Physica. E, Low-dimensional systems & nanostructures, 2015-11, Vol.74, p.400-406

2015

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Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n‐type δ‐doped QW

physica status solidi (b), 2017-04, Vol.254 (4), p.n/a

2017

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Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

Physica. B, Condensed matter, 2016-03, Vol.484, p.95-108

2016

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On some new effects in delta-doped QWs

Physica. E, Low-dimensional systems & nanostructures, 2015-02, Vol.66, p.162-169

2015

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Evidence for capture of holes into resonant states in boron-doped silicon

Journal of applied physics, 2004-11, Vol.96 (9), p.4970-4975

2004

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Direct Experimental Evidence of the Hole Capture by Resonant Levels in Boron Doped Silicon

Physics of Semiconductors; Part B, 2005, Vol.772, p.1192-1193

2005

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Experimental corrections for the hot hole distribution function in germanium in crossed electric and magnetic fields

Semiconductors (Woodbury, N.Y.), 1998-10, Vol.32 (10), p.1069-1071

Tulupenko, V. N.

1998

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Influence of Uniaxial Stress on the Polarization of Spontaneous Emission from p-Ge

Materials science forum, 2002-01, Vol.384-385, p.221-226

2002

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Electronic structure of vertically coupled quantum dot-ring heterostructures under applied electromagnetic probes. A finite-element approach

Exciton states in conical quantum dots under applied electric and magnetic fields

Electronic states in GaAs-(Al,Ga)As eccentric quantum rings under nonresonant intense laser and magnetic fields

Background impurities in a delta-doped QW. Part II: Edge doping

Electron-related optical responses in triangular quantum dots

Background impurities and a delta-doped QW. Part I: Center doping

Theoretical study of electronic and optical properties in doped quantum structures with Razavy confining potential: effects of external fields

Impurity binding energy for δ-doped quantum well structures

Hole subbands in quantum wells: exact solution for six-dimensional Luttinger–Kohn Hamiltonian

Refraction index modulation induced with transverse electric field in double tunnel-coupled GaAs AlGaAs quantum wells

On the possibility of tuning the energy separation between space-quantized levels in a quantum well

Analytical approach to the impurity scattering in quantum wells

The influence of the ionized impurity delta-layer potential in the quantum well on impurity binding energy

Generation of millimeter radiation due to electric-field-induced electron-transit-time resonance in indium phosphide

Temperature shift of intraband absorption peak in tunnel-coupled QW structure

Background impurities in Si 0.8 Ge 0.2 /Si/Si 0.8 Ge 0.2 n-type δ-doped QW: Background impurities in Si0.8Ge0.2/Si/Si0.8Ge0.2 n-type δ-doped QW

Background impurities in Si sub(0.8) Ge sub(0.2)/Si/Si sub(0.8) Ge sub(0.2) n-type delta -doped QW

On intersubband absorption of radiation in delta-doped QWs

Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n‐type δ‐doped QW

Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

On some new effects in delta-doped QWs

Evidence for capture of holes into resonant states in boron-doped silicon

Direct Experimental Evidence of the Hole Capture by Resonant Levels in Boron Doped Silicon

Experimental corrections for the hot hole distribution function in germanium in crossed electric and magnetic fields

Influence of Uniaxial Stress on the Polarization of Spontaneous Emission from p-Ge

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