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Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

Applied physics letters, 2021-03, Vol.118 (13)

2021

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Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

Nanotechnology, 2018-04, Vol.29 (15), p.154002-154002

2018

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Splitting of frequencies of optical phonons in tensile-strained germanium layers

JETP letters, 2017-03, Vol.105 (5), p.327-331

2017

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Sn influence on MBE growth of GeSiSn/Si MQW

Journal of physics. Conference series, 2017-03, Vol.816 (1), p.12020

2017

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Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands

Semiconductors (Woodbury, N.Y.), 2018-03, Vol.52 (3), p.390-393

2018

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The ordering of Ge islands on a stepped Si(100) surface

Journal of physics. Conference series, 2017-03, Vol.816 (1), p.12015

2017

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Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100)

Journal of crystal growth, 2017-01, Vol.457, p.215-219

2017

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Strained multilayer structures with pseudomorphic GeSiSn layers

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1584-1588

2016

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Valence-band offsets in strained SiGeSn/Si layers with different tin contents

Semiconductors (Woodbury, N.Y.), 2017-03, Vol.51 (3), p.329-334

2017

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Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands

Russian physics journal, 2018-03, Vol.60 (11), p.1864-1870

2018

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Growth of Epitaxial SiSn Films with High Sn Content for IR Converters

Russian physics journal, 2017-06, Vol.60 (2), p.354-359

2017

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Synthesis of Epitaxial Films Based on Ge–Si–Sn Materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn Heterojunctions

Russian physics journal, 2015-11, Vol.58 (7), p.965-969

2015

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Exciton Fine Structure in In As Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a Ga As (111) A Vicinal Substrate

Physical review applied, 2022-09, Vol.18 (3), Article 034081

2022

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Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy

Semiconductors (Woodbury, N.Y.), 2015-12, Vol.49 (12), p.1582-1586

2015

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MULTILAYERED PERIODICAL STRUCTURES WITH ELASTICALLY STRAINED GESISN LAYERS AND GESISN NANOISLANDS

Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2018-05, Vol.20 (1), p.38-44

2018

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High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

Scientific reports, 2020-04, Vol.10 (1), p.6532-6532, Article 6532

2020

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Nucleation of Ga droplets self-assembly on GaAs(111)A substrates

Scientific reports, 2021-03, Vol.11 (1), p.6833-6833, Article 6833

2021

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Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution

Journal of applied physics, 2019-07, Vol.126 (2)

2019

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Local droplet etching of a vicinal InGaAs(111)A metamorphic layer

Applied surface science, 2024-10, Vol.669, p.160450, Article 160450

2024

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Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate

NPJ 2D materials and applications, 2022-04, Vol.6 (1), p.1-7, Article 28

2022

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Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates

Scientific reports, 2019-10, Vol.9 (1), p.14520-8, Article 14520

2019

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Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling

Journal of crystal growth, 2024-03, Vol.630, p.127588, Article 127588

2024

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Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control

Journal of crystal growth, 2022-12, Vol.600, p.126906, Article 126906

2022

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Spatiotemporal Dynamics of Betula pendula Crown Cover on Abandoned Arable Land in a Broad-Leaved Forest Zone of Bashkir Cis-Ural

Forests, 2024-01, Vol.15 (1), p.34

2024

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Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers

Nanoscale research letters, 2018-01, Vol.13 (1), p.29-29, Article 29

2018

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Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

Splitting of frequencies of optical phonons in tensile-strained germanium layers

Sn influence on MBE growth of GeSiSn/Si MQW

Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands

The ordering of Ge islands on a stepped Si(100) surface

Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100)

Strained multilayer structures with pseudomorphic GeSiSn layers

Valence-band offsets in strained SiGeSn/Si layers with different tin contents

Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands

Growth of Epitaxial SiSn Films with High Sn Content for IR Converters

Synthesis of Epitaxial Films Based on Ge–Si–Sn Materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn Heterojunctions

Exciton Fine Structure in In As Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a Ga As (111) A Vicinal Substrate

Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy

MULTILAYERED PERIODICAL STRUCTURES WITH ELASTICALLY STRAINED GESISN LAYERS AND GESISN NANOISLANDS

High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

Nucleation of Ga droplets self-assembly on GaAs(111)A substrates

Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution

Local droplet etching of a vicinal InGaAs(111)A metamorphic layer

Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate

Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates

Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling

Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control

Spatiotemporal Dynamics of Betula pendula Crown Cover on Abandoned Arable Land in a Broad-Leaved Forest Zone of Bashkir Cis-Ural

Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers

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