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Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN

Applied physics letters, 2003-02, Vol.82 (5), p.718-720

2003

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Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/GaN

Applied physics letters, 2003-02, Vol.82 (5), p.715-717

2003

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Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes

Applied physics letters, 2004-03, Vol.84 (13), p.2271-2273

2004

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Contactless electroreflectance study of strained Zn0.79Cd0.21Se/ZnSe double quantum wells

Journal of applied physics, 1998-01, Vol.83 (2), p.1043-1048

1998

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The annealing effects on ZnCdSe/ZnSe quantum wells and ZnSe/GaAs interfaces

Journal of applied physics, 1998-12, Vol.84 (11), p.6017-6022

1998

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Ohmic contact to p -ZnSe and p -ZnMgSSe

Electronics letters, 1999-07, Vol.35 (15), p.1280-1281

1999

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The structural and optical properties of high quality ZnTe grown on GaAs using ZnSe/ZnTe strained superlattices buffer layer

Journal of applied physics, 1998-09, Vol.84 (5), p.2866-2870

1998

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Near-band-edge optical properties of molecular beam epitaxy grown ZnSe epilayers on GaAs by modulation spectroscopy

Journal of applied physics, 1998-02, Vol.83 (3), p.1664-1669

1998

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Photoluminescence properties of Zn1-xMgxSe on misoriented GaAs substrates by molecular beam epitaxy

Journal of applied physics, 1998-12, Vol.84 (12), p.6877-6880

1998

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Thermal effect on quantum confinement in ZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells

Solid state communications, 2001-10, Vol.120 (4), p.155-160

2001

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Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2004-02, Vol.43 (No. 2B), p.L264-L266

2004

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Effects of thermal annealing on photoluminescence and structural properties of (ZnSe)2(CdSe)n short-period-superlattices multiple quantum wells

Journal of applied physics, 1999-02, Vol.85 (4), p.2398-2401

1999

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Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs

Semiconductor science and technology, 1999, Vol.14 (1), p.85-88

1999

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High-Resolution Scanning Electron Microscopy Observation of GaN/AlGaN Strained-Layer Superstructures in GaN-Based Violet Laser Diodes

Japanese Journal of Applied Physics, 2004, Vol.43 (3R), p.968-969

2004

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Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures

Japanese Journal of Applied Physics, 2004-06, Vol.43 (6A), p.L740-L742

2004

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Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts

IEEE photonics technology letters, 2003-05, Vol.15 (5), p.649-651

2003

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Structural and optical properties of high-quality ZnTe grown on GaAs using ZnSe/ZnTe strained-layer superlattices buffer layer

Journal of crystal growth, 1999-05, Vol.201, p.506-509

1999

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Optical properties of ZnSe1−xSx epilayers grown on misoriented GaAs substrates

Journal of applied physics, 1998-08, Vol.84 (4), p.2245-2250

1998

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Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures with different buffer layers grown by molecular beam epitaxy

Journal of crystal growth, 1999-05, Vol.201, p.961-964

1999

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Contactless electroreflectance and piezoreflectance studies of temperature-dependent strain in ZnTe/GaAs heterostructures with ZnSe/ZnTe superlattice buffer layers

Applied physics letters, 1998-06, Vol.72 (24), p.3184-3186

1998

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Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide Ohmic contacts

IEEE photonics technology letters, 2003-05, Vol.15 (5), p.646-648

2003

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Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature

IEEE photonics technology letters, 2003-10, Vol.15 (10), p.1342-1344

2003

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Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n -GaN layers

Applied physics letters, 2003-10, Vol.83 (17), p.3608-3610

2003

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Thermal effect on quantum confinement in ZnS sub(0.06)Se sub(0.94)/Zn sub(0.8)Cd sub(0.2)Se quantum wells

Solid state communications, 2001-10, Vol.120 (4), p.155-160

2001

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Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer

IEEE electron device letters, 2003-04, Vol.24 (4), p.206-208

2003

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Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN

Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/GaN

Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes

Contactless electroreflectance study of strained Zn0.79Cd0.21Se/ZnSe double quantum wells

The annealing effects on ZnCdSe/ZnSe quantum wells and ZnSe/GaAs interfaces

Ohmic contact to p -ZnSe and p -ZnMgSSe

The structural and optical properties of high quality ZnTe grown on GaAs using ZnSe/ZnTe strained superlattices buffer layer

Near-band-edge optical properties of molecular beam epitaxy grown ZnSe epilayers on GaAs by modulation spectroscopy

Photoluminescence properties of Zn1-xMgxSe on misoriented GaAs substrates by molecular beam epitaxy

Thermal effect on quantum confinement in ZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells

Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

Effects of thermal annealing on photoluminescence and structural properties of (ZnSe)2(CdSe)n short-period-superlattices multiple quantum wells

Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs

High-Resolution Scanning Electron Microscopy Observation of GaN/AlGaN Strained-Layer Superstructures in GaN-Based Violet Laser Diodes

Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures

Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts

Structural and optical properties of high-quality ZnTe grown on GaAs using ZnSe/ZnTe strained-layer superlattices buffer layer

Optical properties of ZnSe1−xSx epilayers grown on misoriented GaAs substrates

Structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures with different buffer layers grown by molecular beam epitaxy

Contactless electroreflectance and piezoreflectance studies of temperature-dependent strain in ZnTe/GaAs heterostructures with ZnSe/ZnTe superlattice buffer layers

Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide Ohmic contacts

Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature

Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n -GaN layers

Thermal effect on quantum confinement in ZnS sub(0.06)Se sub(0.94)/Zn sub(0.8)Cd sub(0.2)Se quantum wells

Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer

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