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Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature

Applied physics letters, 2010-08, Vol.97 (7), p.071114-071114-3

2010

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Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers

IEEE journal of selected topics in quantum electronics, 2011-11, Vol.17 (6), p.1594-1602

2011

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IEEE_Xplore

Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates

IEEE journal of selected topics in quantum electronics, 2011-07, Vol.17 (4), p.971-978

2011

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IEEE_Xplore

Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique

IEEE journal of quantum electronics, 2012-02, Vol.48 (2), p.175-181

2012

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IEEE_Xplore

Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier

Applied physics letters, 2011-05, Vol.98 (21), p.211107-211107-3

2011

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Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.04DG02-04DG02-3

2012

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High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

IEEE journal of quantum electronics, 2014-05, Vol.50 (5), p.354-363

2014

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IEEE_Xplore

Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance

Journal of applied physics, 2011-12, Vol.110 (12)

2011

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The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes

Nanoscale research letters, 2014-12, Vol.9 (1), p.2418-2418, Article 675

2014

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CW current injection of GaN-based vertical cavity surface emitting laser with hybrid mirrors at room temperature

22nd IEEE International Semiconductor Laser Conference, 2010, p.5-6

2010

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IEEE_Xplore

Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO 2 Nanorod-Array Depth Patterned Sapphire Substrate

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4S), p.4

2012

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Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate

Jpn J Appl Phys, 2012-04, Vol.51 (4), p.04DG11-04DG11-6

2012

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Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4S), p.4

2012

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Investigation of efficiency droop in GaN-based UV LEDs with N-type AlGaN underlayer

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE), 2012, p.414-417

2012

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IEEE_Xplore

Study of efficiency droop in InGaN-based near-UV LEDs with quaternary InAlGaN barrier

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE), 2012, p.418-421

2012

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IEEE_Xplore

Study of 375nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance

Journal of applied physics, 2011-12, Vol.110 (12), p.123102-123102-5

2011

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LED Materials: Epitaxy and Quantum Well Structures

Handbook of Advanced Lighting Technology, p.73-121

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Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier

16th Opto-Electronics and Communications Conference, 2011, p.733-734

2011

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IEEE_Xplore

Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO 2 Nanorod-Array Depth Patterned Sapphire Substrate

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4S), p.4

2012

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Technological Developments of UV LEDs

Handbook of Solid-State Lighting and LEDs, 2017, p.219-242

1, 2017

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A thiadiazole-functionalized Zn(II)-based luminescent coordination polymer with seven-fold interweaved herringbone nets showing solvent-responsive fluorescence properties and discriminative detection of ethylenediamine

Sensors and actuators. B, Chemical, 2022-09, Vol.366, p.131967, Article 131967

2022

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Ten-eleven translocation 1 dysfunction reduces 5-hydroxymethylcytosine expression levels in gastric cancer cells

Oncology letters, 2018-01, Vol.15 (1), p.278-284

2018

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Isocitrate Dehydrogenase 2 Dysfunction Contributes to 5-hydroxymethylcytosine Depletion in Gastric Cancer Cells

Anticancer research, 2016-08, Vol.36 (8), p.3983-3990

2016

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Dynamic Hierarchical Security Access Control with Time-Limited Method in Electronic Medical Record

Advanced Information Networking and Applications, 2020, Vol.1151, p.1251-1264

2020

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Retained foreign body mimicking sciatica

Annals of the Academy of Medicine, Singapore, 2009-07, Vol.38 (7), p.651-652

2009

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Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature

Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers

Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates

Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique

Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier

Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance

The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes

CW current injection of GaN-based vertical cavity surface emitting laser with hybrid mirrors at room temperature

Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO 2 Nanorod-Array Depth Patterned Sapphire Substrate

Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate

Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser

Investigation of efficiency droop in GaN-based UV LEDs with N-type AlGaN underlayer

Study of efficiency droop in InGaN-based near-UV LEDs with quaternary InAlGaN barrier

Study of 375nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance

LED Materials: Epitaxy and Quantum Well Structures

Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier

Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO 2 Nanorod-Array Depth Patterned Sapphire Substrate

Technological Developments of UV LEDs

A thiadiazole-functionalized Zn(II)-based luminescent coordination polymer with seven-fold interweaved herringbone nets showing solvent-responsive fluorescence properties and discriminative detection of ethylenediamine

Ten-eleven translocation 1 dysfunction reduces 5-hydroxymethylcytosine expression levels in gastric cancer cells

Isocitrate Dehydrogenase 2 Dysfunction Contributes to 5-hydroxymethylcytosine Depletion in Gastric Cancer Cells

Dynamic Hierarchical Security Access Control with Time-Limited Method in Electronic Medical Record

Retained foreign body mimicking sciatica

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