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Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching

IEEE electron device letters, 2022-05, Vol.43 (5), p.682-685

2022

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Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched VT by Band Alignments of Individual Channels

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.3383-3389

2024

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Strain Evolution in SiGe Nanosheet Transistor Process Flow

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.2907-2913

2024

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Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated Into Eight Stacked Ge0.95Si0.05 Nanowires and Nanosheets nFETs to Boost ION

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6673-6679

2023

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Breakdown Voltage Enhancement of Nanosheet Transistors by Ultrathin Bodies

IEEE electron device letters, 2024-06, Vol.45 (6), p.956-959

2024

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Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2130-2136

2022

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First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.401-402

2022

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Nanosheet Extensions and Beyond

2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023, p.1-1

2023

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First Demonstration of Monolithic Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual Channels

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

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First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μA at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.29.3.1-29.3.4

2019

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Extremely High-κ Hf 0.2 Zr 0.8 O 2 Gate Stacks Integrated Into Eight Stacked Ge 0.95 Si 0.05 Nanowires and Nanosheets nFETs to Boost I ON

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6673-6679

2023

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Interfacial-Layer-Free Ge 0.95 Si 0.05 Nanosheet FeFETs

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1758-1763

2024

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Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02 nGAAFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4073-4078

2020

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Multi- V T of Stacked GeSn Nanosheets by ALD WN x C y Work Function Metal

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3611-3616

2022

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I ON Enhancement of Ge 0.98 Si 0.02 Nanowire nFETs by High- κ Dielectrics

IEEE electron device letters, 2022-10, Vol.43 (10), p.1601-1604

2022

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Optical Detection of Parasitic Channels of Vertically Stacked Ge 0.98 Si 0.02 nGAAFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4073-4078

2020

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Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched V T by Band Alignments of Individual Channels

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.3383-3389

2024

Volltextzugriff (PDF)

Uniform 4-Stacked Ge 0.9 Sn 0.1 Nanosheets Using Double Ge 0.95 Sn 0.05 Caps by Highly Selective Isotropic Dry Etch

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.2071-2076

2021

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Interfacial-Layer-Free Ge0.95Si0.05 Nanosheet FeFETs

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1758-1763

2024

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ION Enhancement of Ge0.98Si0.02 Nanowire nFETs by High-κ Dielectrics

IEEE electron device letters, 2022-10, Vol.43 (10), p.1601-1604

2022

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Highly Stacked GeSi Nanosheets and Nanowires by Low-Temperature Epitaxy and Wet Etching

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6599-6604

2021

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Novel vertically stacked Ge 0.85 Si 0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge 0.85 Si 0.15 channels

Semiconductor science and technology, 2020-05, Vol.35 (5), p.55010

2020

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Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced Ion (1.7X at VOV = VDS = 0.5 V) by Ge0.85Si0.15 channels

Semiconductor science and technology, 2020-03, Vol.35 (5)

2020

Volltextzugriff (PDF)

Uniform 4-Stacked Ge0.9Sn0.1 Nanosheets Using Double Ge0.95Sn0.05 Caps by Highly Selective Isotropic Dry Etch

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.2071-2076

2021

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Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching

Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched VT by Band Alignments of Individual Channels

Strain Evolution in SiGe Nanosheet Transistor Process Flow

Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated Into Eight Stacked Ge0.95Si0.05 Nanowires and Nanosheets nFETs to Boost ION

Breakdown Voltage Enhancement of Nanosheet Transistors by Ultrathin Bodies

Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching

First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles

Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies

Nanosheet Extensions and Beyond

First Demonstration of Monolithic Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual Channels

First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μA at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V

Extremely High-κ Hf 0.2 Zr 0.8 O 2 Gate Stacks Integrated Into Eight Stacked Ge 0.95 Si 0.05 Nanowires and Nanosheets nFETs to Boost I ON

Interfacial-Layer-Free Ge 0.95 Si 0.05 Nanosheet FeFETs

Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02 nGAAFETs

Multi- V T of Stacked GeSn Nanosheets by ALD WN x C y Work Function Metal

I ON Enhancement of Ge 0.98 Si 0.02 Nanowire nFETs by High- κ Dielectrics

Optical Detection of Parasitic Channels of Vertically Stacked Ge 0.98 Si 0.02 nGAAFETs

Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched V T by Band Alignments of Individual Channels

Uniform 4-Stacked Ge 0.9 Sn 0.1 Nanosheets Using Double Ge 0.95 Sn 0.05 Caps by Highly Selective Isotropic Dry Etch

Interfacial-Layer-Free Ge0.95Si0.05 Nanosheet FeFETs

ION Enhancement of Ge0.98Si0.02 Nanowire nFETs by High-κ Dielectrics

Highly Stacked GeSi Nanosheets and Nanowires by Low-Temperature Epitaxy and Wet Etching

Novel vertically stacked Ge 0.85 Si 0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge 0.85 Si 0.15 channels

Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced Ion (1.7X at VOV = VDS = 0.5 V) by Ge0.85Si0.15 channels

Uniform 4-Stacked Ge0.9Sn0.1 Nanosheets Using Double Ge0.95Sn0.05 Caps by Highly Selective Isotropic Dry Etch

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