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Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor

Nature communications, 2013-04, Vol.4 (1), p.1751-1751, Article 1751

2013

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Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers

Solar energy materials and solar cells, 2018-12, Vol.188 (C), p.99-104

2018

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Structural and electrical properties of phosphorous-doped p-type ZnSxO1−x film grown by co-sputtering

Scripta materialia, 2014-08, Vol.84-85, p.39-42

2014

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Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2005-08, Vol.282 (1), p.112-116

2005

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Point defects in dilute nitride III-N–As and III-N–P

Physica. B, Condensed matter, 2006-04, Vol.376, p.545-551

2006

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Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wells

Journal of crystal growth, 1999-05, Vol.201, p.419-422

1999

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Vertically aligned ZnO nanorods on flexible substrates for multifunctional device applications: Easy and cost-effective route

Materials letters, 2014-04, Vol.120, p.62-64

2014

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Fabry-Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires

Small (Weinheim an der Bergstrasse, Germany), 2015-12, Vol.11 (47), p.6331-6337

2015

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THz transient photoconductivity of the III-V dilute nitride GaPyAs1−y−xNx

Semiconductor science and technology, 2018-12, Vol.33 (12)

2018

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Identification of Ga interstitials in GaAlNP

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.466-469, Article 466

2003

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Optical properties of GaNAs/GaAs structures

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.143-147

2001

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N incorporation in GaN P1 − and InN P1 − using a RF N plasma source

Journal of crystal growth, 1997-05, Vol.175-176, p.145-149

1997

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Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-06, Vol.75 (2), p.166-169

2000

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Nanofabrication of 1-D photonic bandgap structures along a photonic wire

IEEE photonics technology letters, 1996-04, Vol.8 (4), p.491-493

1996

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Effects of stoichiometry on defect formation in ZnO epilayers grown by molecular-beam epitaxy: An optically detected magnetic resonance study

Journal of applied physics, 2008-01, Vol.103 (2), p.023712-023712-4

2008

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Directional light output from photonic-wire microcavity semiconductor lasers

IEEE photonics technology letters, 1996-08, Vol.8 (8), p.968-970

1996

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Mechanism for Light Emission in GaNAs/GaAs Structures Grown by Molecular Beam Epitaxy

Physica status solidi. B, Basic research, 1999-11, Vol.216 (1), p.125-129

1999

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Strain relaxation in GaNxP1−x alloy: effect on optical properties

Physica. B, Condensed matter, 2001-12, Vol.308-310, p.106-109

2001

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Linearization of 1.3-/spl mu/m MQW electroabsorption modulators using an all-optical frequency-insensitive technique

IEEE photonics technology letters, 1998-07, Vol.10 (7), p.964-966

1998

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38 GHz bandwidth 1.3 [micro sign]m MQW electroabsorption modulators for RF photonic links

Electronics letters, 1998, Vol.34 (10), p.1018

1998

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Improving the etched/regrown GaAs interface by in-situ etching using tris-dimethylaminoarsenic

Journal of crystal growth, 1997-05, Vol.175-176, p.387-392

1997

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An evaluation of alternative precursors in chemical beam epitaxy: tris-dimethylaminoarsenic, tris-dimethylaminophosphorus, and tertiarybutylphosphine

Journal of crystal growth, 1996-07, Vol.164 (1), p.112-116

1996

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P2-induced exchange on GaAs during gas-source molecular beam epitaxy growth interruptions

Journal of crystal growth, 1996-07, Vol.164 (1-4), p.77-83

1996

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The effects of rapid thermal annealing on doubled quantum dots grown by molecular beam epitaxy

Journal of crystal growth, 2009-03, Vol.311 (7), p.1791-1794

2009

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A study of group-V element desorption from InAs, InP, GaAs and GaP by reflection high-energy electron diffraction

Journal of crystal growth, 1993-03, Vol.128 (1), p.538-542

1993

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Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor

Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers

Structural and electrical properties of phosphorous-doped p-type ZnSxO1−x film grown by co-sputtering

Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy

Point defects in dilute nitride III-N–As and III-N–P

Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wells

Vertically aligned ZnO nanorods on flexible substrates for multifunctional device applications: Easy and cost-effective route

Fabry-Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires

THz transient photoconductivity of the III-V dilute nitride GaPyAs1−y−xNx

Identification of Ga interstitials in GaAlNP

Optical properties of GaNAs/GaAs structures

N incorporation in GaN P1 − and InN P1 − using a RF N plasma source

Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy

Nanofabrication of 1-D photonic bandgap structures along a photonic wire

Effects of stoichiometry on defect formation in ZnO epilayers grown by molecular-beam epitaxy: An optically detected magnetic resonance study

Directional light output from photonic-wire microcavity semiconductor lasers

Mechanism for Light Emission in GaNAs/GaAs Structures Grown by Molecular Beam Epitaxy

Strain relaxation in GaNxP1−x alloy: effect on optical properties

Linearization of 1.3-/spl mu/m MQW electroabsorption modulators using an all-optical frequency-insensitive technique

38 GHz bandwidth 1.3 [micro sign]m MQW electroabsorption modulators for RF photonic links

Improving the etched/regrown GaAs interface by in-situ etching using tris-dimethylaminoarsenic

An evaluation of alternative precursors in chemical beam epitaxy: tris-dimethylaminoarsenic, tris-dimethylaminophosphorus, and tertiarybutylphosphine

P2-induced exchange on GaAs during gas-source molecular beam epitaxy growth interruptions

The effects of rapid thermal annealing on doubled quantum dots grown by molecular beam epitaxy

A study of group-V element desorption from InAs, InP, GaAs and GaP by reflection high-energy electron diffraction

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