UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 27

Sortiert nach

A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs

IEEE transactions on microwave theory and techniques, 2005-09, Vol.53 (9), p.2926-2934

2005

Volltextzugriff (PDF)

Linearity and power characteristics of SiGe HBTs at high temperatures for RF applications

IEEE transactions on electron devices, 2005-07, Vol.52 (7), p.1452-1458

2005

Volltextzugriff (PDF)

psub guard ring design and modeling for the purpose of substrate noise isolation in the SOC era

IEEE electron device letters, 2005-09, Vol.26 (9), p.693-695

2005

Volltextzugriff (PDF)

Extraction of substrate parameters for RF MOSFETs based on four-port measurement

IEEE microwave and wireless components letters, 2005-06, Vol.15 (6), p.437-439

2005

Volltextzugriff (PDF)

Compact and low-loss ESD protection design for V-band RF applications in a 65-nm CMOS technology

2012 IEEE International Symposium on Circuits and Systems (ISCAS), 2012, p.2127-2130

2012

Volltextzugriff (PDF)

Hot-carrier effects on power characteristics of SiGe HBTs

IEEE electron device letters, 2004-06, Vol.25 (6), p.393-395

2004

Volltextzugriff (PDF)

Low-frequency noise properties of dynamic-threshold (DT) MOSFET's

IEEE electron device letters, 1999-10, Vol.20 (10), p.532-534

1999

Volltextzugriff (PDF)

ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.EL.3.1-EL.3.5

2012

Volltextzugriff (PDF)

The base current degradation of poly-emitter BJTs under AC stress

IEEE transactions on electron devices, 1995-10, Vol.42 (10), p.1868-1871

1995

Volltextzugriff (PDF)

Temperature effect on power characteristics of SiGe HBTs

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), 2004, Vol.3, p.1955-1958 Vol.3

2004

Volltextzugriff (PDF)

ESD protection design for radio-frequency integrated circuits in nanoscale CMOS technology

2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013), 2013, p.241-244

2013

Volltextzugriff (PDF)

Including pattern-dependent effects in electromagnetic simulations of on-chip passive components

2009 IEEE Radio Frequency Integrated Circuits Symposium, 2009, p.603-606

2009

Volltextzugriff (PDF)

Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process

Electrical Overstress / Electrostatic Discharge Symposium Proceedings 2012, 2012, p.1-5

2012

Volltextzugriff (PDF)

Frequency- and voltage-dependent degradation of polyemitter BJTs under a.c. stress

Solid-state electronics, 1997-04, Vol.41 (4), p.607-612

1997

Volltextzugriff (PDF)

A physical model of base resistance from low to high currents for arbitrarily doped submicrometer BJTs

Solid-state electronics, 1996, Vol.39 (7), p.1100-1103

1996

Volltextzugriff (PDF)

Modified LC-tank ESD protection design for 60-GHz RF applications

2011 20th European Conference on Circuit Theory and Design (ECCTD), 2011, p.57-60

2011

Volltextzugriff (PDF)

Slow-wave characteristics of interconnects on silicon substrates

International Semiconductor Device Research Symposium, 2003, 2003, p.188-189

2003

Volltextzugriff (PDF)

Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743), 2004, p.193-196

2004

Volltextzugriff (PDF)

Linearity and power characteristics of SiGe HBTs at high temperatures for RF applications : Integrated Circuits Technologies for RF Circuit Applications

IEEE transactions on electron devices, 2005, Vol.52 (7), p.1452-1458

2005

Volltextzugriff (PDF)

Temperature effects on the performance of 4-port transformers

International Semiconductor Device Research Symposium, 2003, 2003, p.190-191

2003

Volltextzugriff (PDF)

Base current noise degradation of polysilicon emitter npn bjt during constant-current stress

International Electron Devices and Materials Symposium, 1994, p.11-11

1994

Volltextzugriff (PDF)

Measurement of the Base Resistance at Active Region of Polyemitter Bjt by Noise Method

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest], 1993, p.35-37

1993

Volltextzugriff (PDF)

Investigation of a SiGe HBT during ESD stress in a 0.18-μm SiGe BiCMOS process

IEEE electron device letters, 2003-03, Vol.24 (3), p.168-170, Article 168

2003

Volltextzugriff (PDF)

Investigation of ESD devices in 0.18 /spl mu/m SiGe BiCMOS process

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual, 2003, p.357-360

2003

Volltextzugriff (PDF)

Enhancing PEDOT modified electrode for tartrazine sensing through the immobilization of MIL-100(Fe) metal-organic framework

Journal of the Taiwan Institute of Chemical Engineers, 2024-02, Vol.155, p.105254, Article 105254

2024

Volltextzugriff (PDF)

1 – 25 von 27

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(14)
Mit Volltextzugriff
(26)

Publikationsform

Sprache

Englisch
(27)
Japanisch
(3)

Erscheinungsjahr

n.n

Thema

Science & Technology
(13)
Engineering
(12)
Technology
(12)
Engineering, Electrical & Electronic
(11)
Radio Frequency
(10)
Applied Sciences
(6)
Devices
(6)
Electronics
(6)
Exact Sciences And Technology
(6)
Germanium Silicon Alloys
(6)
Heterojunction Bipolar Transistors
(6)
Robustness
(6)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(6)
Silicon Germanium
(6)
Stress
(6)
Voltage
(6)
Cmos Process
(5)
Degradation
(5)
Electrostatic Discharge
(5)
Electrostatic Discharges
(5)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

IEEE Xplore
(23)
IngentaConnect
(15)
Elsevier ScienceDirect Journals Complete
(4)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(2)
MEDLINE
(1)
IngentaConnect Journals
(1)
EZB Free E-Journals
(1)
Journals@Ovid Ovid Full Text
(1)

3 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs

Linearity and power characteristics of SiGe HBTs at high temperatures for RF applications

psub guard ring design and modeling for the purpose of substrate noise isolation in the SOC era

Extraction of substrate parameters for RF MOSFETs based on four-port measurement

Compact and low-loss ESD protection design for V-band RF applications in a 65-nm CMOS technology

Hot-carrier effects on power characteristics of SiGe HBTs

Low-frequency noise properties of dynamic-threshold (DT) MOSFET's

ESD protection structure with inductor-triggered SCR for RF applications in 65-nm CMOS process

The base current degradation of poly-emitter BJTs under AC stress

Temperature effect on power characteristics of SiGe HBTs

ESD protection design for radio-frequency integrated circuits in nanoscale CMOS technology

Including pattern-dependent effects in electromagnetic simulations of on-chip passive components

Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process

Frequency- and voltage-dependent degradation of polyemitter BJTs under a.c. stress

A physical model of base resistance from low to high currents for arbitrarily doped submicrometer BJTs

Modified LC-tank ESD protection design for 60-GHz RF applications

Slow-wave characteristics of interconnects on silicon substrates

Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors

Linearity and power characteristics of SiGe HBTs at high temperatures for RF applications : Integrated Circuits Technologies for RF Circuit Applications

Temperature effects on the performance of 4-port transformers

Base current noise degradation of polysilicon emitter npn bjt during constant-current stress

Measurement of the Base Resistance at Active Region of Polyemitter Bjt by Noise Method

Investigation of a SiGe HBT during ESD stress in a 0.18-μm SiGe BiCMOS process

Investigation of ESD devices in 0.18 /spl mu/m SiGe BiCMOS process

Enhancing PEDOT modified electrode for tartrazine sensing through the immobilization of MIL-100(Fe) metal-organic framework

Suchergebnisse filtern