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Nucleation of Ga droplets self-assembly on GaAs(111)A substrates

Scientific reports, 2021-03, Vol.11 (1), p.6833-6833, Article 6833

2021

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Intermittent growth for InAs quantum dot on GaAs(001)

Journal of crystal growth, 2020-12, Vol.551, p.125891, Article 125891

2020

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Hopkins-Skellam index and origin of spatial regularity in InAs quantum dot formation on GaAs(001)

Journal of applied physics, 2015-04, Vol.117 (14)

2015

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Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors

Scientific reports, 2018-07, Vol.8 (1), p.11278-8, Article 11278

2018

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Spatial point analysis of quantum dot nucleation sites on InAs wetting layer

Surface science, 2011-03, Vol.605 (5), p.L1-L5

2011

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Raman spectroscopy of epitaxial InGaN/Si in the central composition range

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC1020

2019

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Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A

Nanomaterials (Basel, Switzerland), 2020-07, Vol.10 (8), p.1512

2020

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Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets

Nanomaterials (Basel, Switzerland), 2022-11, Vol.12 (21), p.3887

2022

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Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation

Nanoscale research letters, 2010-08, Vol.5 (12), p.1901-1904

2010

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Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates

Nanomaterials (Basel, Switzerland), 2020-12, Vol.10 (12), p.2542

2020

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Effect of antimony on the density of InAs/Sb:GaAs(1 0 0) quantum dots grown by metalorganic chemical-vapor deposition

Journal of crystal growth, 2007, Vol.298, p.548-552

2007

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Atomistic Insights for InAs Quantum Dot Formation on GaAs(001) using STM within a MBE Growth Chamber

Small (Weinheim an der Bergstrasse, Germany), 2006-03, Vol.2 (3), p.386-389

2006

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Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth

Nanoscale research letters, 2010-10, Vol.5 (12), p.1930-1934

2010

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Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation

Nanoscale research letters, 2010-08, Vol.5 (12), p.1901-1904

2010

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First-principles calculations of Mn incorporation into GaAs(110)

Surface science, 2023-03, Vol.729, p.122230, Article 122230

2023

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Narrow photoluminescence linewidth (<17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition

Applied physics letters, 2004-04, Vol.84 (15), p.2817-2819

2004

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Development of a Recyclable and Low‐Leaching Palladium Catalyst Supported on Sulfur‐Modified Gallium Arsenide (001) for Use in Suzuki–Miyaura Coupling

ChemCatChem, 2009-10, Vol.1 (2), p.279-285

2009

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Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates

Scientific reports, 2019-10, Vol.9 (1), p.14520-8, Article 14520

2019

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Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling

Journal of crystal growth, 2024-03, Vol.630, p.127588, Article 127588

2024

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Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control

Journal of crystal growth, 2022-12, Vol.600, p.126906, Article 126906

2022

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High-temperature growth of Mn-irradiated InAs quantum dots

Journal of crystal growth, 2007-04, Vol.301, p.797-800

2007

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In Situ Scanning Tunneling Microscope Observation of InAs Wetting Layer Formation on GaAs(001) during Molecular Beam Epitaxy Growth at 500 °C

Japanese Journal of Applied Physics, 2006-08, Vol.45 (8L), p.L777

2006

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Improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs∕GaAs by low-pressure metalorganic chemical vapor deposition

Applied physics letters, 2004-10, Vol.85 (14), p.2753-2755

2004

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Atomistic behaviour of (n×3)-reconstructed areas of InAs–GaAs(001) surface at the growth condition

Journal of crystal growth, 2017-11, Vol.477, p.104-109

2017

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Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques(Prerace,<Special Issue>Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques)

Journal of the Japanese Association for Crystal Growth, 2015, Vol.42(3), pp.173

Tsukamoto, Shiro

2015

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Nucleation of Ga droplets self-assembly on GaAs(111)A substrates

Intermittent growth for InAs quantum dot on GaAs(001)

Hopkins-Skellam index and origin of spatial regularity in InAs quantum dot formation on GaAs(001)

Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors

Spatial point analysis of quantum dot nucleation sites on InAs wetting layer

Raman spectroscopy of epitaxial InGaN/Si in the central composition range

Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A

Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets

Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation

Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates

Effect of antimony on the density of InAs/Sb:GaAs(1 0 0) quantum dots grown by metalorganic chemical-vapor deposition

Atomistic Insights for InAs Quantum Dot Formation on GaAs(001) using STM within a MBE Growth Chamber

Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth

Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation

First-principles calculations of Mn incorporation into GaAs(110)

Narrow photoluminescence linewidth (<17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition

Development of a Recyclable and Low‐Leaching Palladium Catalyst Supported on Sulfur‐Modified Gallium Arsenide (001) for Use in Suzuki–Miyaura Coupling

Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates

Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling

Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control

High-temperature growth of Mn-irradiated InAs quantum dots

In Situ Scanning Tunneling Microscope Observation of InAs Wetting Layer Formation on GaAs(001) during Molecular Beam Epitaxy Growth at 500 °C

Improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs∕GaAs by low-pressure metalorganic chemical vapor deposition

Atomistic behaviour of (n×3)-reconstructed areas of InAs–GaAs(001) surface at the growth condition

Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques(Prerace,<Special Issue>Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques)

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