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A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

IEEE electron device letters, 2018-01, Vol.39 (1), p.15-18

2018

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Why Is FE-HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

IEEE electron device letters, 2016-09, Vol.37 (9), p.1123-1126

2016

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Causes of ferroelectricity in HfO2-based thin films: an ab initio perspective

Physical chemistry chemical physics : PCCP, 2019, Vol.21 (23), p.12150-12162

2019

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Charge Trapping in Al2O3/ \beta -Ga2O3-Based MOS Capacitors

IEEE electron device letters, 2018-07, Vol.39 (7), p.1022-1025

2018

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Black Phosphorus Mid-Infrared Photodetectors with High Gain

Nano letters, 2016-07, Vol.16 (7), p.4648-4655

2016

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Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.46-52

2018

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Current transport in metal/hafnium oxide/silicon structure

IEEE electron device letters, 2002-02, Vol.23 (2), p.97-99

2002

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Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4439-4445

2013

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Charge Collection Mechanisms in GaAs MOSFETs

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2752-2759

2015

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Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4), p.44104

2016

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Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFET's

IEEE transactions on electron devices, 1998-02, Vol.45 (2), p.512-520

1998

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Electrical properties of high-quality ultrathin nitride/oxide stack dielectrics

IEEE transactions on electron devices, 1999-02, Vol.46 (2), p.362-368

1999

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The impact of device scaling on the current fluctuations in MOSFET's

IEEE transactions on electron devices, 1994-11, Vol.41 (11), p.2061-2068

1994

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Lateral profiling of interface traps and oxide charge in MOSFET devices: charge pumping versus DCIV

IEEE transactions on electron devices, 2001-10, Vol.48 (10), p.2303-2309

2001

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JVD silicon nitride as tunnel dielectric in p-channel flash memory

IEEE electron device letters, 2002-02, Vol.23 (2), p.91-93

2002

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Quantitative inelastic tunneling spectroscopy in the silicon metal-oxide-semiconductor system

Applied physics letters, 1997-10, Vol.71 (17), p.2523-2525

1997

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Current - voltage characteristic of asymmetric ferroelectric capacitors

Journal of physics. D, Applied physics, 1996-02, Vol.29 (2), p.457-461

1996

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A Study of Endurance Issues in HfO 2 -Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

IEEE electron device letters, 2018-01, Vol.39 (1), p.15-18

2018

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Front- and Back-Interface Trap Densities and Subthreshold Swings of Fully Depleted Mode Metal-Oxide-Semiconductor Transistors Fabricated on Separation-by-Implanted-Oxygen Substrates

Japanese Journal of Applied Physics, 1998-07, Vol.37 (7R), p.3933

1998

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Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric

IEEE electron device letters, 2001-07, Vol.22 (7), p.324-326

2001

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Why Is FE-HfO sub(2) More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

IEEE electron device letters, 2016-09, Vol.37 (9), p.1123-1126

2016

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Why Is FE–HfO 2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

IEEE electron device letters, 2016-09, Vol.37 (9), p.1123-1126

2016

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Causes of ferroelectricity in HfO 2 -based thin films: an ab initio perspective

Physical chemistry chemical physics : PCCP, 2019-06, Vol.21 (23), p.12150-12162

2019

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Causes of ferroelectricity in HfO-based thin films: an perspective

Physical chemistry chemical physics : PCCP, 2019-06, Vol.21 (23), p.1215-12162

2019

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Highly reliable silicon nitride thin films made by jet vapor deposition

Japanese Journal of Applied Physics, 1995-02, Vol.34 (2B), p.955-958

1995

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A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

Why Is FE-HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

Causes of ferroelectricity in HfO2-based thin films: an ab initio perspective

Charge Trapping in Al2O3/ \beta -Ga2O3-Based MOS Capacitors

Black Phosphorus Mid-Infrared Photodetectors with High Gain

Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric

Current transport in metal/hafnium oxide/silicon structure

Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

Charge Collection Mechanisms in GaAs MOSFETs

Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors

Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFET's

Electrical properties of high-quality ultrathin nitride/oxide stack dielectrics

The impact of device scaling on the current fluctuations in MOSFET's

Lateral profiling of interface traps and oxide charge in MOSFET devices: charge pumping versus DCIV

JVD silicon nitride as tunnel dielectric in p-channel flash memory

Quantitative inelastic tunneling spectroscopy in the silicon metal-oxide-semiconductor system

Current - voltage characteristic of asymmetric ferroelectric capacitors

A Study of Endurance Issues in HfO 2 -Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

Front- and Back-Interface Trap Densities and Subthreshold Swings of Fully Depleted Mode Metal-Oxide-Semiconductor Transistors Fabricated on Separation-by-Implanted-Oxygen Substrates

Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric

Why Is FE-HfO sub(2) More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

Why Is FE–HfO 2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

Causes of ferroelectricity in HfO 2 -based thin films: an ab initio perspective

Causes of ferroelectricity in HfO-based thin films: an perspective

Highly reliable silicon nitride thin films made by jet vapor deposition

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