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Effect of the topological transition on the optical absorption edge of sulphur-based glasses

Physica status solidi. B. Basic research, 1996-05, Vol.195 (1), p.283-286

1996

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Current Transport in Metal-Chalcogenide Glass Structures with Blocking Barrier at the Interface

Physica status solidi. A, Applied research, 1991-01, Vol.123 (1), p.K13-K18

1991

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Elastic properties of micrononhomogeneous AsSGe alloys

Journal of non-crystalline solids, 1993-04, Vol.155 (2), p.180-184

1993

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Photoelectric Phenomena in Isotope Vitreous As2S3-Silicon Single-Crystal Heterojunctions

Physica status solidi. A, Applied research, 1987-08, Vol.102 (2), p.K103-K107

1987

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Formation of gap edges and shift of Fermi level in As2S3 - based glass alloys with addition of germanium

Journal of non-crystalline solids, 1987-12, Vol.97-98, p.1135-1138

1987

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Investigation of hole transport in vitreous As2S3

Journal of non-crystalline solids, 1980-01, Vol.35-36, p.981-986

1980

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Absorption edge and dispersion of the refractive index of arsenic-sulfur-germanium layers with an increased sulfur concentration

Journal of applied spectroscopy, 1990-06, Vol.52 (6), p.625-628

1990

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Arsenic trisulphide in isotype amorphous-crystalline heterojunctions

Physica status solidi. A, Applied research, 1978-11, Vol.50 (1), p.195-202

1978

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Current Transport in Metal-Chalcogenide Glass Structures with Blocking Barrier at the Interface

Physica status solidi. A, Applied research, 1991-01, Vol.123 (1), p.K13-K18

1991

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Influence of annealing and temperature on the absorption edge of As2S3-Ge amorphous films

Physica status solidi. A, Applied research, 1973-09, Vol.19 (1), p.307-312

1973

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Electro- and photostimulated chemical processes in aluminium-chalcogenide glass semiconductor thin layer structures

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings, 1996, Vol.1, p.309-311 vol.1

1996

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Room temperature a.c. operating gas sensors based on quaternary chalcogenides

Sensors and actuators. B, Chemical, 2016-02, Vol.223, p.95-100

2016

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Raman scattering evidence on the correlation of middle range order and structural self-organization of As-S-Ge glasses in the intermediate phase region

Journal of non-crystalline solids, 2023-06, Vol.609, p.122255, Article 122255

2023

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Middle range order and elastic properties of non-stoichiometric chalcogenide glasses in the AsS3 - GeS4 system

Journal of non-crystalline solids, 2022-01, Vol.575, p.121207, Article 121207

2022

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Concentration induced damping of gas sensitivity in ultrathin tellurium films

Sensors and actuators. B, Chemical, 2013-02, Vol.177, p.1128-1133

2013

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Impact of Adsorbed Gases on the Transport Mechanisms in Ge8As2Te13S3 Amorphous Films

Glass physics and chemistry, 2019, Vol.45 (1), p.53-59

2019

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First Sharp Diffraction Peak features of the intermediate phase glasses and amorphous thin films in the non-stoichiometric (GeS4)x(AsS3)1-x system

Thin solid films, 2023-05, Vol.773, p.139828, Article 139828

2023

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Investigation of the oxygen, nitrogen and water vapour cross-sensitivity to NO2 of tellurium-based thin films

Sensors and actuators. B, Chemical, 2007-02, Vol.121 (2), p.406-413

2007

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INFLUENCE OF GLASSY BACKBONE ON THE PHOTOFORMATION AND PROPERTIES OF SOLID ELECTROLYTES Ag : As-S-Ge

Chalcogenide letters, 2020-01, Vol.17 (1), p.9-14

2020

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Work function and AC operating gas-sensitive films based on quaternary chalcogenides

Physica Status Solidi. B: Basic Solid State Physics, 2016-06, Vol.253 (6), p.1046-1053

2016

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Characterization of tellurium-based films for NO2 detection

Thin solid films, 2005-08, Vol.485 (1-2), p.252-256

2005

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Impedance Characterization of Gas Sensitive S-Te Based Quaternary Chalcogenides

3rd International Conference on Nanotechnologies and Biomedical Engineering, p.382-388

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On the photodissolution kinetics of silver in glassy As2S3

Journal of non-crystalline solids, 2010-02, Vol.356 (3), p.147-152

2010

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On the photodissolution kinetics of silver in glassy As 2S 3

Journal of non-crystalline solids, 2010, Vol.356 (3), p.147-152

2010

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Peculiarities of Ultrathin Amorphous and Nanostructured Te Thin Films by Gas Sensing

Journal of nanoelectronics and optoelectronics, 2014-04, Vol.9 (2), p.282-286

2014

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Effect of the topological transition on the optical absorption edge of sulphur-based glasses

Current Transport in Metal-Chalcogenide Glass Structures with Blocking Barrier at the Interface

Elastic properties of micrononhomogeneous AsSGe alloys

Photoelectric Phenomena in Isotope Vitreous As2S3-Silicon Single-Crystal Heterojunctions

Formation of gap edges and shift of Fermi level in As2S3 - based glass alloys with addition of germanium

Investigation of hole transport in vitreous As2S3

Absorption edge and dispersion of the refractive index of arsenic-sulfur-germanium layers with an increased sulfur concentration

Arsenic trisulphide in isotype amorphous-crystalline heterojunctions

Current Transport in Metal-Chalcogenide Glass Structures with Blocking Barrier at the Interface

Influence of annealing and temperature on the absorption edge of As2S3-Ge amorphous films

Electro- and photostimulated chemical processes in aluminium-chalcogenide glass semiconductor thin layer structures

Room temperature a.c. operating gas sensors based on quaternary chalcogenides

Raman scattering evidence on the correlation of middle range order and structural self-organization of As-S-Ge glasses in the intermediate phase region

Middle range order and elastic properties of non-stoichiometric chalcogenide glasses in the AsS3 - GeS4 system

Concentration induced damping of gas sensitivity in ultrathin tellurium films

Impact of Adsorbed Gases on the Transport Mechanisms in Ge8As2Te13S3 Amorphous Films

First Sharp Diffraction Peak features of the intermediate phase glasses and amorphous thin films in the non-stoichiometric (GeS4)x(AsS3)1-x system

Investigation of the oxygen, nitrogen and water vapour cross-sensitivity to NO2 of tellurium-based thin films

INFLUENCE OF GLASSY BACKBONE ON THE PHOTOFORMATION AND PROPERTIES OF SOLID ELECTROLYTES Ag : As-S-Ge

Work function and AC operating gas-sensitive films based on quaternary chalcogenides

Characterization of tellurium-based films for NO2 detection

Impedance Characterization of Gas Sensitive S-Te Based Quaternary Chalcogenides

On the photodissolution kinetics of silver in glassy As2S3

On the photodissolution kinetics of silver in glassy As 2S 3

Peculiarities of Ultrathin Amorphous and Nanostructured Te Thin Films by Gas Sensing

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