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Silicon and beryllium doping of OMVPE grown AlxGa1−xAs (x = 0−0.3) using silane and diethylberyllium

Journal of crystal growth, 1984-09, Vol.68 (1), p.54-59

1984

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Characterization of tantalum-silicon films on GaAs at elevated temperatures

IEEE electron device letters, 1983-07, Vol.4 (7), p.207-209

1983

Volltextzugriff (PDF)

The crystalline qualities of silicon layers formed by solid phase epitaxial growth

Thin solid films, 1977-10, Vol.46 (1), p.99-107

1977

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An interdigitated stacked p-i-n multiple-quantum-well modulator

IEEE photonics technology letters, 1996-09, Vol.8 (9), p.1172-1174

1996

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Interdigitated hetero InGaAs/GaAs n-i-p-i modulators

Materials letters, 1996-12, Vol.29 (4), p.249-253

1996

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Scaling of the nonlinear optical cross sections of GaAs-AlGaAs multiple quantum-well hetero n-i-p-i's

IEEE journal of quantum electronics, 1994-12, Vol.30 (12), p.2790-2797

1994

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Investigation of dislocations by backscattering spectrometry and transmission electron microscopy

Nuclear instruments & methods, 1978-02, Vol.149 (1), p.615-617

1978

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Silicon and beryllium doping of OMVPE grown Al xGa 1− xAs ( x = 0−0.3) using silane and diethylberyllium

Journal of crystal growth, 1984, Vol.68 (1), p.54-59

1984

Volltextzugriff (PDF)

Mbe Growth and Characterization of GaAs thin Films on SiGe Buffer Layers

MRS proceedings, 1988, Vol.116, Article 167

1988

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Ion-Beam Processing of Ion-Implanted Si

MRS proceedings, 1983, Vol.27, Article 241

1983

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Stable tantalum silicide Schottky barrier on n-type gallium arsenide evaluated at elevated temperatures

Electronics letters, 1983-04, Vol.19 (9), p.330-332

1983

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Low-temperature epitaxial growth of GaAs on (100) silicon substrates

Electronics letters, 1985, Vol.21 (9), p.406-408

1985

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Transient heat transfer from a wire in a violently fluctuating environment

International journal of heat and mass transfer, 1983-11, Vol.26 (11), p.1695-1705

1983

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Stable high temperature tantalum silicide Schottky barrier on gallium arsenide

1982 International Electron Devices Meeting, 1982, p.174-176

1982

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InP mixer diodes with etched via OHMIC contacts

Electronics letters, 1984-04, Vol.20 (9), p.378-379

1984

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Materials aspects of Cu2S for CdS/Cu2S solar cells

Journal of crystal growth, 1977-07, Vol.39 (1), p.61-72

1977

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WP-A3 ambient effects on annealing of phosphorus implanted emitters

IEEE transactions on electron devices, 1978-11, Vol.25 (11), p.1357-1358

1978

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Silicon-on-sapphire films with negative and positive interfacial charges

Thin solid films, 1981-08, Vol.82 (3), p.213-216

1981

Volltextzugriff (PDF)

Solar furnace annealing of amorphous Si layers

Applied physics letters, 1979-08, Vol.35 (4), p.327-329

1979

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Formation of stacking faults and dislocations in phosphorus diffused silicon

Physics letters. A, 1978-09, Vol.68 (1), p.93-94

1978

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A virtual self-aligned process for n-channel InP IGFET's (or MISFET's)

IEEE electron device letters, 1981-11, Vol.2 (11), p.299-301

1981

Volltextzugriff (PDF)

Laser annealing of self-ion damaged silicon

Applied physics letters, 1979-11, Vol.35 (9), p.701-703

1979

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Double-step annealing and ambient effects on phosphorus implanted emitters in silicon

Solid-state electronics, 1979-01, Vol.22 (3), p.335-342

1979

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Effects of CVD oxide on phosphorus-diffused emitters in silicon

IEEE transactions on electron devices, 1979-09, Vol.26 (9), p.1310-1312

1979

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Heteroepitaxy of a deposited amorphous germanium layer on a silicon substrate by laser annealing

Thin solid films, 1979-02, Vol.57 (1), p.L13-L15

1979

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Silicon and beryllium doping of OMVPE grown AlxGa1−xAs (x = 0−0.3) using silane and diethylberyllium

Characterization of tantalum-silicon films on GaAs at elevated temperatures

The crystalline qualities of silicon layers formed by solid phase epitaxial growth

An interdigitated stacked p-i-n multiple-quantum-well modulator

Interdigitated hetero InGaAs/GaAs n-i-p-i modulators

Scaling of the nonlinear optical cross sections of GaAs-AlGaAs multiple quantum-well hetero n-i-p-i's

Investigation of dislocations by backscattering spectrometry and transmission electron microscopy

Silicon and beryllium doping of OMVPE grown Al xGa 1− xAs ( x = 0−0.3) using silane and diethylberyllium

Mbe Growth and Characterization of GaAs thin Films on SiGe Buffer Layers

Ion-Beam Processing of Ion-Implanted Si

Stable tantalum silicide Schottky barrier on n-type gallium arsenide evaluated at elevated temperatures

Low-temperature epitaxial growth of GaAs on (100) silicon substrates

Transient heat transfer from a wire in a violently fluctuating environment

Stable high temperature tantalum silicide Schottky barrier on gallium arsenide

InP mixer diodes with etched via OHMIC contacts

Materials aspects of Cu2S for CdS/Cu2S solar cells

WP-A3 ambient effects on annealing of phosphorus implanted emitters

Silicon-on-sapphire films with negative and positive interfacial charges

Solar furnace annealing of amorphous Si layers

Formation of stacking faults and dislocations in phosphorus diffused silicon

A virtual self-aligned process for n-channel InP IGFET's (or MISFET's)

Laser annealing of self-ion damaged silicon

Double-step annealing and ambient effects on phosphorus implanted emitters in silicon

Effects of CVD oxide on phosphorus-diffused emitters in silicon

Heteroepitaxy of a deposited amorphous germanium layer on a silicon substrate by laser annealing

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