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Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

Journal of crystal growth, 2018-12, Vol.504, p.1-6

2018

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High growth rate MOVPE of Al(Ga)N in planetary reactor

Journal of crystal growth, 2012-08, Vol.352 (1), p.209-213

2012

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Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

Semiconductors (Woodbury, N.Y.), 2014, Vol.48 (1), p.53-57

2014

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Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs

Journal of luminescence, 2021-06, Vol.234, p.117957, Article 117957

2021

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InGaN/GaN heterostructures grown by submonolayer deposition

Semiconductors (Woodbury, N.Y.), 2012-10, Vol.46 (10), p.1335-1340

2012

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Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

Semiconductors (Woodbury, N.Y.), 2012-10, Vol.46 (10), p.1281-1285

2012

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Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

Semiconductors (Woodbury, N.Y.), 2010-01, Vol.44 (1), p.93-97

2010

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Study of silicon nitride deposition in III-N MOVPE reactors

Journal of crystal growth, 2020-12, Vol.551, p.125906, Article 125906

2020

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The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

Semiconductors (Woodbury, N.Y.), 2010-07, Vol.44 (7), p.924-930

2010

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Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

Semiconductors (Woodbury, N.Y.), 2010-01, Vol.44 (1), p.123-126

2010

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Study of GaN doping with carbon from propane in a wide range of MOVPE conditions

Journal of crystal growth, 2016-09, Vol.449, p.108-113

2016

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Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes

Nanotechnology, 2017-01, Vol.28 (1), p.015701-015701

2017

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High-Power AlGaInN LEDs Operated Under High Pulsed Current Density (up to 7 kA/cm2)

2020 International Conference Laser Optics (ICLO), 2020, p.1-1

2020

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Fast AlGaN growth in a whole composition range in planetary reactor

Journal of crystal growth, 2013-05, Vol.370, p.7-11

2013

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Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

Semiconductors (Woodbury, N.Y.), 2016-02, Vol.50 (2), p.244-248

2016

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Hydrogen effects in III-nitride MOVPE

Journal of crystal growth, 2008-11, Vol.310 (23), p.4862-4866

2008

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Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Journal of crystal growth, 2011-01, Vol.315 (1), p.267-271

2011

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Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1431-1434

2016

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InGaN/GaN light-emitting diode microwires of submillimeter length

Semiconductors (Woodbury, N.Y.), 2017-01, Vol.51 (1), p.100-103

2017

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Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas

Semiconductors (Woodbury, N.Y.), 2013, Vol.47 (1), p.33-44

2013

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Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1241-1247

2016

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Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAIn heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

Semiconductors (Woodbury, N.Y.), 2016-10, Vol.50 (10), p.1383

2016

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Capacitance--voltage characteristics of /[Al.sub.2] [O.sub.3]/n-GaN MIS structures

Semiconductors (Woodbury, N.Y.), 2015-08, p.1035

2015

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Optical lattices of excitons in InGaN/GaN quantum well systems

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.4-8

2015

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Effect of growth kinetics on the structural and optical properties of quantum dot ensembles

Journal of crystal growth, 2004-06, Vol.267 (1), p.47-59

2004

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Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

High growth rate MOVPE of Al(Ga)N in planetary reactor

Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs

InGaN/GaN heterostructures grown by submonolayer deposition

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

Study of silicon nitride deposition in III-N MOVPE reactors

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

Study of GaN doping with carbon from propane in a wide range of MOVPE conditions

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes

High-Power AlGaInN LEDs Operated Under High Pulsed Current Density (up to 7 kA/cm2)

Fast AlGaN growth in a whole composition range in planetary reactor

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

Hydrogen effects in III-nitride MOVPE

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells

InGaN/GaN light-emitting diode microwires of submillimeter length

Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas

Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAIn heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

Capacitance--voltage characteristics of /[Al.sub.2] [O.sub.3]/n-GaN MIS structures

Optical lattices of excitons in InGaN/GaN quantum well systems

Effect of growth kinetics on the structural and optical properties of quantum dot ensembles

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