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Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

Journal of applied physics, 2019-11, Vol.126 (18)

2019

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Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells

Semiconductors (Woodbury, N.Y.), 2021-12, Vol.55 (Suppl 1), p.S49-S53

2021

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Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (14), p.1900-1903

2019

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Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling

Physica status solidi. A, Applications and materials science, 2015-04, Vol.212 (4), p.851-854

2015

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GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography

Physics of the solid state, 2019-12, Vol.61 (12), p.2335-2337

2019

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Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (16), p.2121-2124

2019

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Stress-dislocation management in MOVPE of GaN on SiC wafers

Physica status solidi. A, Applications and materials science, 2016-10, Vol.213 (10), p.2759-2763

2016

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Selective Epitaxy of Submicron GaN Structures

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (16), p.2118-2120

2019

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Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (14), p.1843-1845

2018

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Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure

Applied physics letters, 2023-09, Vol.123 (12)

2023

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Critical spatial disorder in InGaN resonant Bragg structures

Applied physics letters, 2022-07, Vol.121 (4)

2022

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Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

Journal of physics. Conference series, 2021-11, Vol.2103 (1), p.12202

2021

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Determination of hole diffusion length in n-GaN

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12075

2021

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Optical reflection spectra of resonant photonic structures based on a system of 100 InGaN quantum wells

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12153

2020

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Study of Ga2O3 deposition by MOCVD

Journal of physics. Conference series, 2021-12, Vol.2103 (1)

2021

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A GaN/AlGaN Resonance Bragg Structure

Bulletin of the Russian Academy of Sciences. Physics, 2023-06, Vol.87 (6), p.782-785

2023

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Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range

Technical physics letters, 2023-12, Vol.49 (Suppl 3), p.S211-S214

2023

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Emission spectrum control in monolithic blue-cyan dichromatic light-emitting diodes

Semiconductor science and technology, 2020-04, Vol.35 (4), p.45017

2020

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Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12206

2020

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Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

Journal of physics. Conference series, 2019-11, Vol.1400 (7), p.77009

2019

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III-N heterostructures for monolithic integration of enhancement/depletion-mode high-electron-mobility transistors

Journal of physics. Conference series, 2020-03, Vol.1482 (1), p.12031

2020

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Study of silicon nitride deposition in III-N MOVPE reactors

Journal of crystal growth, 2020-12, Vol.551, p.125906, Article 125906

2020

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Critical Disorder in InGaN/GaN Resonant Bragg Structures

Bulletin of the Russian Academy of Sciences. Physics, 2023-06, Vol.87 (6), p.853-856

2023

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The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE

Technical physics letters, 2020-12, Vol.46 (12), p.1211-1214

2020

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Investigation of Statistical Broadening in InGaN Alloys

Journal of physics. Conference series, 2018-12, Vol.1135 (1), p.12050

2018

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Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells

Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells

Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling

GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography

Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam

Stress-dislocation management in MOVPE of GaN on SiC wafers

Selective Epitaxy of Submicron GaN Structures

Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs

Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure

Critical spatial disorder in InGaN resonant Bragg structures

Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

Determination of hole diffusion length in n-GaN

Optical reflection spectra of resonant photonic structures based on a system of 100 InGaN quantum wells

Study of Ga2O3 deposition by MOCVD

A GaN/AlGaN Resonance Bragg Structure

Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range

Emission spectrum control in monolithic blue-cyan dichromatic light-emitting diodes

Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors

Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

III-N heterostructures for monolithic integration of enhancement/depletion-mode high-electron-mobility transistors

Study of silicon nitride deposition in III-N MOVPE reactors

Critical Disorder in InGaN/GaN Resonant Bragg Structures

The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE

Investigation of Statistical Broadening in InGaN Alloys

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