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Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratio

IEEE transactions on electron devices, 1983-04, Vol.30 (4), p.381-390

1983

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Ga0.47In0.53As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy

IEEE journal of quantum electronics, 1987-06, Vol.23 (6), p.936-942

Won Tsang

1987

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Optical nonlinearities due to subband structures in Al0.08In0.92Sb/InSb superlattices

Applied physics letters, 1990-01, Vol.56 (3), p.218-220

1990

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dc analysis of parallel arrays of two and three Josephson junctions

Journal of applied physics, 1975-10, Vol.46 (10), p.4573-4580

1975

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InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy

IEEE electron device letters, 1987-07, Vol.8 (7), p.294-296

1987

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Preferentially etched diffraction gratings in silicon

Journal of applied physics, 1975-01, Vol.46 (5), p.2163-2166

1975

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Quantum well lasers in telecommunications

AT&T Technical Journal, 1992-01, Vol.71 (1), p.75-83

1992

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Influence of the current-phase relation on the critical-current-applied-magnetic-flux dependence in parallel-connected Josephson junctions

Journal of applied physics, 1976-06, Vol.47 (6), p.2656-2661

1976

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Simultaneous exposure and development technique for making gratings on positive photoresist

Applied physics letters, 1974-02, Vol.24 (4), p.196-199

1974

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Al -- Ga Disorder in AlxGa1 -- xAs Alloys Grown by Molecular Beam Epitaxy

Applied physics letters, 1981-08, Vol.39 (4), p.334-335

1981

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Microfabrication of two-dimensional periodic arrays by laser beam interferometric technique

Applied physics letters, 1975-07, Vol.27 (2), p.79-82

1975

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InP/In0.53Ga0.47As heterojunction phototransistors grown by chemical beam epitaxy

IEEE electron device letters, 1987-04, Vol.8 (4), p.171-173

1987

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Ga 0.47 In 0.53 As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy

IEEE journal of quantum electronics, 1987-06, Vol.23 (6), p.936-942

Won Tsang

1987

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Thin-film beam splitter and reflector for optical guided waves

Applied physics letters, 1975-01, Vol.27 (11), p.588-590

1975

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Grating masks suitable for ion-beam machining and chemical etching

Applied physics letters, 1974-10, Vol.25 (7), p.415-418

1974

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Application of gratings in fabricating arrays of superconducting and normal junctions

Applied physics letters, 1974-05, Vol.24 (10), p.519-522

1974

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Optical Waveguides Fabricated by Preferential Etching

Applied Optics, 1975-05, Vol.14 (5), p.1200

1975

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Analysis of ring distributed-feedback lasers

Journal of applied physics, 1974-09, Vol.45 (9), p.3978-3980

1974

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A thin−film ring distributed−feedback laser

Journal of applied physics, 1975-02, Vol.46 (2), p.838-841

1975

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high-reliability 1.3-μm InP-based uncooled lasers in nonhermetic packages

IEEE journal of quantum electronics, 1996-09, Vol.32 (9), p.1606-1614

1996

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Growth Characteristics of GaAs-Ga1-xAlxAs Structures Fabricated by Liquid-Phase Epitaxy Over Preferentially Etched Channels

Applied physics letters, 1976-02, Vol.28 (4), p.234-237

1976

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A thin-film prism as a beam separator for multimode guided waves in integrated optics

Optics communications, 1975-01, Vol.13 (3), p.342-346

1975

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Introduction to the issue on optoelectronic materials and processing

IEEE journal of selected topics in quantum electronics, 1997-06, Vol.3 (3), p.709-711

1997

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High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy

IEEE journal of quantum electronics, 1988-03, Vol.24 (3), p.496-500

1988

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Ga sub 0 sub . sub 4 sub 7 In sub 0 sub . sub 5 sub 3 As/InP double heterostructure (DH) and multiquantum well (MQW) lasers grown by chemical beam epitaxy (CBE)

IEEE journal of quantum electronics, 1987-01, Vol.23 (6), p.936-942

Tsang, Won-t

1987

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Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratio

Ga0.47In0.53As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy

Optical nonlinearities due to subband structures in Al0.08In0.92Sb/InSb superlattices

dc analysis of parallel arrays of two and three Josephson junctions

InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy

Preferentially etched diffraction gratings in silicon

Quantum well lasers in telecommunications

Influence of the current-phase relation on the critical-current-applied-magnetic-flux dependence in parallel-connected Josephson junctions

Simultaneous exposure and development technique for making gratings on positive photoresist

Al -- Ga Disorder in AlxGa1 -- xAs Alloys Grown by Molecular Beam Epitaxy

Microfabrication of two-dimensional periodic arrays by laser beam interferometric technique

InP/In0.53Ga0.47As heterojunction phototransistors grown by chemical beam epitaxy

Ga 0.47 In 0.53 As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy

Thin-film beam splitter and reflector for optical guided waves

Grating masks suitable for ion-beam machining and chemical etching

Application of gratings in fabricating arrays of superconducting and normal junctions

Optical Waveguides Fabricated by Preferential Etching

Analysis of ring distributed-feedback lasers

A thin−film ring distributed−feedback laser

high-reliability 1.3-μm InP-based uncooled lasers in nonhermetic packages

Growth Characteristics of GaAs-Ga1-xAlxAs Structures Fabricated by Liquid-Phase Epitaxy Over Preferentially Etched Channels

A thin-film prism as a beam separator for multimode guided waves in integrated optics

Introduction to the issue on optoelectronic materials and processing

High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy

Ga sub 0 sub . sub 4 sub 7 In sub 0 sub . sub 5 sub 3 As/InP double heterostructure (DH) and multiquantum well (MQW) lasers grown by chemical beam epitaxy (CBE)

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