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IEEE transactions on electron devices, 2007-05, Vol.54 (5), p.1224-1231
2007
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Sensors and actuators. B, Chemical, 2007-03, Vol.122 (1), p.81-88
2007
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IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2689-2695
2006
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IEEE sensors journal, 2006-04, Vol.6 (2), p.287
2006
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IEEE transactions on electron devices, 2006-01, Vol.53 (1), p.1-8
2006
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Sensors and actuators. B, Chemical, 2006-01, Vol.113 (1), p.29-35
2006
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IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2532-2539
2003
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Japanese Journal of Applied Physics, 2006-02, Vol.45 (2R), p.680
2006
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Journal of applied physics, 2008-07, Vol.104 (2), p.024515-024515-6
2008
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Sensors and actuators. B, Chemical, 2008-06, Vol.132 (2), p.587-592
2008
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Japanese Journal of Applied Physics, 2007-01, Vol.46 (1L), p.L74
2007
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Sensors and actuators. B, Chemical, 2007-07, Vol.125 (1), p.22-29
2007
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Temperature-dependent hydrogen sensing characteristics of a new Pt/InAlAs Schottky diode-type sensor
2008
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Sensors and actuators. B, Chemical, 2008-09, Vol.134 (2), p.750-754
2008
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Applied physics letters, 2007-06, Vol.90 (25), p.253503-253503-3
2007
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Sensors and actuators. B, Chemical, 2008-07, Vol.133 (1), p.128-134
2008
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Applied physics letters, 2006-12, Vol.89 (26), p.263503-263503-3
2006
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Applied physics letters, 2005-03, Vol.86 (11)
2005
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Sensors and actuators. B, Chemical, 2007-01, Vol.120 (2), p.687-693
2007
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Japanese Journal of Applied Physics, 2005-02, Vol.44 (2R), p.824
2005
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Sensors and actuators. B, Chemical, 2007-06, Vol.124 (2), p.549-556
2007
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Sensors and actuators. B, Chemical, 2007-06, Vol.124 (2), p.535-541
2007
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Semiconductor science and technology, 2003-07, Vol.18 (7), p.615-619
2003
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Semiconductor science and technology, 2007-05, Vol.22 (5), p.475-480
2007
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Characteristics of a sulfur-passivated InGaP ∕ InGaAs ∕ GaAs heterostructure field-effect transistor
2005
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